InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al_0.7Ga_0.3Sb and In_0.2Al_0.8Sb alloys. The distance between the gate and the channel was reduced to 7–13 nm to allow good aspect ratios for very short gate lengths. In addition, n⁺-InAs caps were successfully deposited on the In_0.2Al_0.8Sb upper barrier allowing for low sheet resistance with relatively low sheet carrier density in the channel. These advances are expected to result in InAs-channel HEMTs with enhanced microwave performance and better reliability.     

Recent progress of physical failure analysis of GaN HEMTs

Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields,due to the outstanding physical and chemical properties of the GaN material.However,GaN HEMTs suffer from degradations and even failures during practical applications,making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations.In this paper,common physical characterization techniques for post failure analyses are introduced,several failure mechanisms and corresponding failure phenomena are reviewed and summarized,and finally device optimization methods are discussed.     

多晶硅TFT模型的研究进展

全面介绍了多晶硅薄膜晶体管(TFT)紧凑模型的现状和应用前景,简单说明了多晶硅TFT特有的电学特性,这是多晶硅TFT建模的基础,重点介绍了基于阈值电压和基于表面势的多晶硅TFT紧凑模型的研究进展,并对这些模型进行了评述,其中RPI模型是基于阈值电压的TFT模型的典范.虽然TFT模型已经有所发展,但成熟度还远远不够.最后提出了改进多晶硅TFT模型的方向和策略,包括二维器件模拟的应用、基于表面势模型的发展、多晶硅材料特性的应用、统一模型的发展、短沟效应的建模和参数提取等.     

Enhanced Performance Consistency in Nanoparticle/TIPS Pentacene‐Based Organic Thin Film Transistors

In this study, inorganic silica nanoparticles are used to manipulate the morphology of 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS pentacene) thin films and the performance of solution‐processed organic thin‐film transistors (OTFTs). This approach is taken to control crystal anisotropy, which is the origin of poor consistency in TIPS pentacene based OTFT devices. Thin film active layers are produced by drop‐casting mixtures of SiO₂ nanoparticles and TIPS pentacene. The resultant drop‐cast films yield improved morphological uniformity at ～10% SiO₂ loading, which also leads to a 3‐fold increase in average mobility and nearly 4 times reduction in the ratio of measured mobility standard deviation (μ_Stdev) to average mobility (μ_Avg). Grazing‐incidence X‐ray diffraction, scanning and transmission electron microscopy as well as polarized optical microscopy are used to investigate the nanoparticle‐mediated TIPS pentacene crystallization. The experimental results suggest that the SiO₂ nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity.     

Improving hydrogenation efficiency of polycrystalline silicon thin film transistors by a new approach

In this paper, a new hydrogenation process of poly-Si thin film for the fabrication of poly-Si thin film transistors (TFTs) is proposed. In the new approach, the hydrogenation of TFTs is performed before deposition of contact metal. N-channel and p-channel poly-Si TFTs with various channel lengths and widths were fabricated with the new and conventional processes for comparison. The results verified that the efficiency of hydrogenation has been improved remarkably by the new process. The field-effect mobility of carriers, the on state current, threshold voltage and the on/off states current ratio have been greatly improved, and the trap state density has been reduced significantly.     

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all‐inorganic flexible FeFET based on epitaxial Pb(Zr_0.1Ti_0.9)O₃/ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10⁴ as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment.     

Electric field induced ferroelectric-surface modification for high mobility organic field effect transistors

Inherent spontaneous polarization in ferroelectric-dielectric polymer PVDF-TrFE (Poly[(vinylidenefluoride-co-trifluoroethylene]) and an external electric field induced surface modification procedure are utilized to enhance organic field effect transistor (OFET) characteristics. The increase in the carrier mobility of the electric-field (EF) treated device correlates with the EF magnitude and evolution of dielectric microstructure and exhibits an enhancement beyond 300%. The enhanced interfacial transport property appears to have its origin in the dipolar orientation and nanostructure evolution at the interface.     

The role of the electrode configuration on the electrical properties of small-molecule semiconductor thin-films

This paper presents a systematic analysis of the electrode configuration influence on the electrical properties of organic semiconductor (OSC) thin-film devices. We have fabricated and electrically characterized a set of planar two-terminal devices. The differences in I-V characteristics between the top and bottom contact structures are presented and analyzed. Top-contact configurations have a linear current vs. electric field behavior, while the bottom-electrode devices display a transition from ohmic to space-charge-limited conduction regime. The transition is temperature- and thickness-dependent. Finite-element calculations show that when the OSC film is connected using top electrodes, the current flows through the OSC bulk region. On the other hand, the bottom-electrode configuration allows most of the current to flow near the OSC/substrate interface. The current probes interfacial states resulting in a space-charge conduction regime. The results shed some light on the so-called “contact effects” commonly observed in organic thin-film transistors. The findings presented here have implications for both the understanding of the charge transport in OSC films and the design of organic semiconductor devices.     

Anisotropy of Charge Transport in a Uniaxially Aligned and Chain‐Extended,High‐Mobility,Conjugated Polymer Semiconductor

Charge transport in the ribbon phase of poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT)—one of the most highly ordered, chain‐extended crystalline microstructures available in a conjugated polymer semiconductor—is studied. Ribbon‐phase PBTTT has previously been found not to exhibit high carrier mobilities, but it is shown here that field‐effect mobilities depend strongly on the device architecture and active interface. When devices are constructed such that the ribbon‐phase films are in contact with either a polymer gate dielectric or an SiO₂ gate dielectric modified by a hydrophobic, self‐assembled monolayer, high mobilities of up to 0.4 cm² V^?1 s^?1 can be achieved, which is comparable to those observed previously in terrace‐phase PBTTT. In uniaxially aligned, zone‐cast films of ribbon‐phase PBTTT the mobility anisotropy is measured for transport both parallel and perpendicular to the polymer chain direction. The mobility anisotropy is relatively small, with the mobility along the polymer chain direction being higher by a factor of 3–5, consistent with the grain size encountered in the two transport directions.     

Design of Engineered Elastomeric Substrate for Stretchable Active Devices and Sensors

In the field of flexible electronics, emerging applications require biocompatible and unobtrusive devices, which can withstand different modes of mechanical deformation and achieve low complexity in the fabrication process. Here, the fabrication of a mesa‐shaped elastomeric substrate, supporting thin‐film transistors (TFTs) and logic circuits (inverters), is reported. High‐relief structures are designed to minimize the strain experienced by the electronics, which are fabricated directly on the pillars' surface. In this design configuration, devices based on amorphous indium‐gallium‐zinc‐oxide can withstand different modes of deformation. Bending, stretching, and twisting experiments up to 6 mm radius, 20% uniaxial strain, and 180° global twisting, respectively, are performed to show stable electrical performance of the TFTs. Similarly, a fully integrated digital inverter is tested while stretched up to 20% elongation. As a proof of the versatility of mesa‐shaped geometry, a biocompatible and stretchable sensor for temperature mapping is also realized. Using pectin, which is a temperature‐sensitive material present in plant cells, the response of the sensor shows current modulation from 13 to 28 °C and functionality up to 15% strain. These results demonstrate the performance of highly flexible electronics for a broad variety of applications, including smart skin and health monitoring.