多层片式ZnO压敏电阻器的现状与发展方向

基于国内外多层片式ZnO压敏电阻器的研究及应用,介绍了多层片式ZnO压敏电阻器的结构(阵列及模块)、材料组成(ZnO-Bi2O3系、ZnO-玻璃系、ZnO-V2O5系及ZnO-Pr6O11系等)、电极材料、生产工艺(流延和电镀)等现状,并就多层片式ZnO压敏电阻器的工艺和技术发展趋势提出了见解。     

高能氧化锌压敏元件研究

为了提高ZnO压敏元件的通流能力,采用化学共沉淀法制得含七种组分的复合添加剂。用此复合添加剂、ZnO、SiO2及Al(NO3)3的混合溶液,经球磨后,制成φ10mm×1mm氧化锌压敏元件。通过TEM和粒度测试,分析了复合添加剂的尺寸和晶粒的均匀性,并对元件的微区成分和性能进行了测试。结果表明:采用化学共沉淀法制备的复合添加剂粉体粒径小,在元件中的分布较传统方法均匀;用该添加剂制备的氧化锌压敏元件的2ms方波通流能力超过705J/cm3,是传统方法的两倍多。     

低压压敏陶瓷烧成过程中的温度因素研究

通过对低压压敏陶瓷烧成过程中的温度进行研究，并对电性能和微观结构进行对比分析，得到了ZnO—PoO系低压压敏陶瓷烧结过程中的最佳烧成温度、升温速率和保温时间，分别为：烧成温度1000％、升温速率3％／min、保温时间2h。并结合微观结构及电性能，测试分析和探讨了其影响机理。     

电磁瞬态多级防护技术研究

对电磁瞬态 (电涌 )的器件防护技术进行了研究。根据电涌多级防护的基本要求 ,利用电路波过程理论 ,推导了两级防护电路的电压和电流波的计算公式。在此基础上 ,对两级防护的动态特性进行计算分析。最后采用 EMTP软件对多级防护的实例进行仿真     

钨掺杂对二氧化钛压敏电阻瓷电性能的影响

通过对样品的伏案性质、介电常数以及晶界势垒的测量和分析,研究了WO3对TiO2压敏电阻瓷电性能的影响。研究发现掺入x(WO3)为0.25%的样品表现出最好的压敏性质,其压敏电压为42.5V/mm,非线性系数α达到9.6,以及较高的相对介电常数(εr=7.41×104),是一种具有较好潜力的电容-压敏电阻器。通过不同烧结温度的实验,发现1 350℃是最佳烧结温度。类比ZnO压敏材料的晶界势垒模型,提出了适合TiO2压敏材料的肖特基势垒模型。     

Grain Size Control in Low-Voltage Varistors

Low-voltage ZnO varistors often suffer from a large spread in the current/voltage characteristics, due to discontinuously grown, inhomogeneous microstructures. Addition of seed grains to the ceramic powder is an effective means of preventing the growth of single large grains, thus making the control of final grain size and electrical properties much easier. Seed grains are generally single-crystalline particles of the same composition with a grain size which is considerably larger than the average grain size of the starting ZnO powder.     

掺Y~（3＋）、La~（3＋）的（Sr，Ca）TiO_3系多功能陶瓷

用稀土离子Ｙ（３＋）、Ｌａ（３＋）对（Ｓｒ，Ｃａ）ＴｉＯ３掺杂，以Ｂａ－Ｓｉ－Ａｌ玻璃为助熔剂，在１３５０～１４５０℃还原性气氛中烧成，获得工艺性能良好、烧结温度较低、晶粒电阻率低（１０（－２）Ω·ｃｍ）、非线性高（α达１０以上）的陶瓷材料。在制备过程中省略了以往用碱金属离子涂覆并进行热扩散的工序。用缺陷化学理论，根据测量的ＩＣＴＳ谱、Ｉ－Ｖ特性和Ｃ－Ｖ特性系统研究了Ｙ（３＋）、Ｌａ（３＋）掺杂对晶粒半导化、压敏特性和介电特性的影响。热处理过程中，Ｏ－的化学吸附是这类陶瓷产生晶界势垒的主要原因。     

Effect of Inclusion Size on the Densification of ZnO–Zn7Sb2O12

Two-step densification curves, observed in the constant-rate heating of ZnO–Zn₇Sb₂O₁₂ composites, have been analyzed in correlation with the effect of inclusion particles (Zn₇Sb₂O₁₂). In the presence of these inclusion particles, the ZnO matrix is divided into two regions with different densification characteristics depending on the interaction with the particles. The linear shrinkage at the end of the first step depends on the inclusion size as well as on its volume fraction. The fractional volume of the region influenced by the inclusion particles has been estimated from the densification curve, and the size of the region influenced by an inclusion particle is found to increase with increasing inclusion size.     

Effect of Bismuth of Oxide Content on the Sintering of Zinc Oxide

Densification and microstructure de velopment in Bi₂O₃-doped ZnO have been studied with a special emphasis on the effect of the Bi₂O₃ content. A small amount of Bi₂O₃ in ZnO (0.1 mol%) retarded densification, but the addition of Bi₂O₃ to more than 0.5 mol% promoted densification by the formation of a liquid phase above the eutectic temperature (∼740°C). The liquid phase increased grain-boundary mobility, which was responsible for the formation of intragrain pores and the decrease in the sintered density. The increase in the Bi₂O₃ content increased the probability of the formation of skeleton structure, which reduced the grain growth rate and the sintered density.     

Direct-Write Fabrication of Zinc Oxide Varistors

Zinc oxide (ZnO)-based pastes with tailored rheological properties have been developed for direct-write fabrication of thick-film varistor elements in highly integrated, multifunctional electroceramic devices. Such pastes exhibited pseudoplastic behavior with a low shear apparent viscosity of roughly 1 × 10⁴ Pa·s. Upon aging, the pastes attained printable, steady-state viscosities of approximately 3 × 10² Pa·s at 10 s⁻¹. Square and rectangular elements were patterned on dense alumina substrates and sintered at varying temperatures between 800° and 1250°C. Varistor elements fired at 900°C exhibited nonlinearity coefficients (α= 30) that were equivalent to high-density (>95%) varistors formed by cold isostatic pressing at 100 MPa (15 ksi) of a similar chemically derived powder heat-treated under analogous conditions.