带有光放大的波分复用技术在光纤通信中的应用

本文论述了波分复用技术的优点及其应用；介绍了波分复用技术与光纤放大器相结合后的发展概况２；评述了波分复用技术发展中的主要问题及其在当前实用系统中的解决方案和今后的发展方向。     

光纤放大器在超长中继段中的应用

主要介绍了光纤放大器的优点及其在超长中继段中的应用实例，并对光纤放大器在我国长途传输网络中的应用前景作了简要的分析。     

光纤电流互感器平均波长漂移变比误差

全温条件下(-40~60℃)测量精度误差较大是影响光纤电流互感器实用化进程的主要原因之一。传感光纤的维尔德常数随光纤内光波平均波长变化,导致系统输出变比漂移,从而降低系统的测量精度。理论分析了光谱平均波长与系统输出变比之间的关系,并通过实验验证了关系式的准确性。分别对光纤电流互感器光路各组成器件对通过光平均波长的影响进行了分析,实验测量了变温条件下平均波长变化的趋势以及程度。提出了起偏器与延迟光纤在变温条件下对平均波长影响的自补偿方案,有效的减小了传感光纤中平均波长的漂移程度。保证光纤电流互感器在变温条件下到达0.2 s级精度要求。同时为适应更高测量精度应用场合提供了参考。     

可调谐DBR激光器波长锁定光路系统模拟设计

利用ZEMAX软件设计了一套应用于可调谐DBR激光器输波长锁定的光路系统,该系统包括非球面镜、分光镜、法布里-珀罗标准具和消色差双胶合透镜。借助软件中的镀膜模块设计法布里-珀罗标准具的内部结构并表征其透射谱线,通过多重结构模块构建分光系统,然后使用偏振分析模块计算系统总耦合效率和两分支的分光比。优化设计后的光路系统可应用于C波段可调谐DBR激光器20个信道的波长锁定。     

基于Fabry-Perot结构的可调波长选择光开关

本文提出波长选择光开关的概念,首次研制出一个基于Fabry-Perot结构的可调波长选择光开关,该开关为2×2光纤端口,每个端口携带N个波长,工作时可以选1个或多个波长,插入损耗小于3dB,波长调谐范围10nm,调谐机构为一对多层三明治结构的压电陶瓷,具有驱动电压低,小于5V的驱动电压可以达到3.3nm的调谐,最大开关时间为1毫秒,开关比优于30dB.最后还分析了其基本透射与反射光谱性能,并讨论其对光通信、光交换网络产生的重要应用价值.     

线性预编码OFDM系统的迭代接收机

线性预编码是OFDM系统在频率选择性衰落信道中利用频率分集的有效方法.为了进一步提高性能,本文提出了一种线性预编码OFDM系统的迭代接收机,该迭代接收机采用基于线性最小均方误差准则(LMMSE)的turbo均衡算法及其简化方法,具有很低的计算复杂度.本文同时还提出通过使用长度不小于等效离散时间信道的时延扩展长度的线性预编码器和迭代接收机,可获得完全的频率分集增益.仿真表明本文提出的方法在多径干扰严重的信道条件下的误码率性能接近AWGN下界.     

WDM光传输系统2.5Gbit／s光发送模块研究

本文介绍了作者设计，调试的２．５Ｇｂｉｔ／ｓ光发送模块的工作原理、关键技术、典型性能参数，该模块通过控制激光器温度来稳定其中心波长，为波分复用系统的应用提供了具备稳定中心波长特性的光源。     

波长扫描光纤干涉仪扫描模型的建立及分析

介绍了一种新的可用于绝对距离测量的波长扫描光纤干涉仪，建立了测量系统及波长扫描的模型，分析了波长扫描的随机漂移对测量的影响，提出了对光源扫描性能的要求．实验结果表明，测量系统的精度可达到０．０５μｍ．     

Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures

This paper describes a new multi-heterojunction n ⁺pp photovoltaic infrared photodetector. The device has been developed specifically for operation at temperatures of 200–300K in the long wavelength (8–14 μm) range of the infrared spectrum. The new structure solves the perennial problems of poor quantum efficiency and low dynamic resistance found in conventional long wavelength infrared photovoltaic detectors when operated near room temperature. Computer simulations show that devices with properly optimized multiple heterojunctions are capable of achieving the performance limits imposed by the statistical nature of thermal generation-recombination processes. In order to demonstrate the technology, multiple heterojunction devices have been fabricated on epilayers grown by isothermal vapor phase epitaxy of HgCdTe and in situ As p-type doping. The detector structures were formed using a combination of conventional dry etching, angled ion milling, and angled thermal evaporation for contact metal deposition. These multi-junction n ⁺pp HgCdTe heterostructure devices exhibit performances which make them useful for many applications. D* of optically immersed multiple heterostructure photovoltaic detectors exceeding 10⁸cmHz^1/2/W were measured at λ=10.6 μm and T=300K.     

Growth and characterization of inTISb for IR-detectors

Epitaxial In_1-xTl_xSb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique on InSb and GaAs substrates. A specially designed high-temperature source delivery system was used for the low vapor pressure cyclopentadienylthallium source. Tl-compositions in the deposited films were measured by Rutherford backscattering spectroscopy which confirmed the incorporation of up to 10% Tl. Room temperature infrared transmission spectra of InTISb exhibited considerable absorption beyond 7 μm. Photoconductive detectors were fabricated in InTISb films grown on semi-insulating GaAs. Spectral response measurements showed substantial photoresponse at 8.5 to 14 μm. In spite of the large lattice-mismatch (≈14%) between InTISb and GaAs, photoconductive detectors exhibited black-body detectivities (D^* _bb) of 5.0 × 10⁸ cm-Hz^1/2W⁻¹ at 40K.