Earliness–tardiness minimization on scheduling a batch processing machine with non-identical job sizes

This paper considers the scheduling problem of minimizing earliness–tardiness (E/T) on a single batch processing machine with a common due date. The problem is extended to the environment of non-identical job sizes. First, a mathematical model is formulated, which is tested effectively under IBM ILOG CPLEX using the constraint programming solver. Then several optimal properties are given to schedule batches effectively, and by introducing the concept of ARB (Attribute Ratio of Batch), it is proven that the ARB of each batch should be made as small as possible in order to minimize the objective, designed as the heuristic information for assigning jobs into batches. Based on these properties, a heuristic algorithm MARB (Minimum Attribute Ratio of Batch) for batch forming is proposed, and a hybrid genetic algorithm is developed for the problem under study by combining GA (genetic algorithm) with MARB. Experimental results demonstrate that the proposed algorithm outperforms other algorithms in the literature, both for small and large problem instances.     

Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

An Adaptive Recipe Implementation in Case‐Based Formalism for Abnormal Condition Management

This paper deals with accurate recipe implementation for abnormal condition management in a batch process using a case‐based reasoning (CBR) approach. A set of new problems can be solved by reusing proven process solutions. The proposed system integrates quantitative and qualitative parameters for adaptation of cases. A novel methodology to generate accurate recipes and to adapt to the processes is introduced during normal and abnormal conditions. In particular, the differences between current conditions and the references (recipes) should be managed to prevent any hazardous conditions arising. The processes are evaluated using their similarity to the past cases. This intelligent approach distinguishes plausible cases, generates accurate recipes, and adapts to new situations. The aim is to use the offline historical process data and safety related information in order to propose changes and adjustments in the processes.     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

Makespan estimation and order acceptance in batch process industries when processing times are uncertain

Batch process industries are characterized by complex precedence relationships between operations, which renders the estimation of an acceptable workload very difficult. A detailed schedule based model can be used for this purpose, but for large problems this may require a prohibitive large amount of computation time. We propose a regression based model to estimate the makespan of a set of jobs. We extend earlier work based on deterministic processing times by considering Erlang-distributed processing times in our model. This regression-based model is used to support customer order acceptance. Three order acceptance policies are compared by means of simulation experiments: a scheduling policy, a workload policy and a regression policy. The results indicate that the performance of the regression policy can compete with the performance of the scheduling policy in situations with high variety in the job mix and high uncertainty in the processing times. Correspondence to: C.V. Ivanescu     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

液晶显示器生产中的激光退火和缺陷修复

由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性，使有源矩阵液晶显示器（AMLCD）的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复，可有效的改善AMLCD的性能，提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后，讨论了激光对不同类型缺陷修复的原理和过程。最后，分析比较了不同类型激光退火方法的特点。     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

基于栅格法-模拟退火法的机器人路径规划

路径规划是机器人技术中的重要组成部分,分全局路径规划和局部路径规划。本文将栅格法与模拟退火法结合,采用栅格法表示环境信息。局部路径规划主要基于模拟退火法,使路径跳出局部极小点,到达目标位置。