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11.
Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates. 相似文献
12.
TiAl+Sb合金的热稳定性的研究 总被引:1,自引:0,他引:1
研究了退火处理对Ti-34wt.%Al-0.5wt.%Sb合金的室温抗弯性能,显微组织,相组成和断口形貌的影响。发现,低于1000℃退火处理,TiAl+Sb合金的显微组织没有变化,其力学性能仍然保持较高的值。此合金成分适应高温使用条件。 相似文献
13.
I. W. Hall 《Materials Characterization》1997,39(2-5):419-434
The effects of ion implantation and subsequent annealing on the microstructure of molybdenum have been investigated by transmission electron microscopy. The ions investigated were carbon, nitrogen, and tellurium. The ion-induced damage was found to give rise to grain boundary migration phenomena both during implantation and during subsequent annealing. Precipitation or ordering was found to occur for each ion on annealing. 相似文献
14.
15.
A. Edwards Mulpuri V. Rao B. Molnar A. E. Wickenden W. Holland P. H. Chi 《Journal of Electronic Materials》1997,26(3):334-339
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown
on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature
activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is
too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases
the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the
damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have
indicated a redistribution in the measured profiles of Mg due to annealing. 相似文献
16.
17.
Guo Dong Zhu Jing Xu Xue Jian Yan Jie Li Zhi Gang Zeng Miao Shen Li Zhang 《Thin solid films》2006,510(1-2):181-183
This paper introduces the Force Modulation technique to the study of crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. Using this technique we have successfully visualized ferroelectric crystalline domains and observed that these ferroelectric domains grow out from amorphous phase, unite into strip-like structures, and finally congregate into a union. Force Modulation can weaken the influence of topography on imaging of ferroelectric domains, and reveal more details, which are difficult to be observed in topographical image. 相似文献
18.
Sung Ho Jeong Joon Jeong Yi Jong Keun Kim Man Yeong Ha 《Journal of Mechanical Science and Technology》1991,5(1):16-21
A computer program to calculate the strip temperature heated in the continuous annealing furnace was developed, using the
zone method for radiative heat transfer analysis with the measured gas temperature in the furnace. Using theF
E Operator, the present study considered the effects of soot and transient species, in addition to the H2O−CO2 gas mixture on the gas radiative heat transfer. The predicted strip temperature distribution forF
E=1.05 represented well the measured data. The maximum difference in the heat flux transfered to the strip from the combustion
gas forF
E=1.0 (without soot and transient species gas radiation) and 1.05 (with soot and transient species gas radiation) was about
15%. The present study also investigated the effects of line speed and thickness variations on the strip temperature, establishing
the bases for the on-line computer model. 相似文献
19.
A new discretization method for aggregation equations is developed. It is compared to the fixed pivot technique proposed by Kumar and Ramkrishna (1996a. On the solution of population balance equations by discretization—I. A fixed pivot technique. Chemical Engineering Science 51, 1311-1332). The numerical results for aggregation problems by discretized population balances are consistently overpredicting and diverge before the gelling point in the case of a gelling kernel. The present work establishes a new technique which assigns the particles within the cells more precisely. This is achieved by taking first the average of the newborn particles within the cell and then assigning them to the neighboring nodes such that pre-chosen properties are exactly preserved. The new technique preserves all the advantages of the conventional discretized methods and provides a significant improvement in predicting the particle size distribution (PSD). In addition, it is found that the technique is a powerful tool for the computation of gelling problems. The effectiveness of the technique is illustrated by application to several aggregation problems for suitably selected aggregation kernels including physically relevant kernels. 相似文献
20.
CdS thin films and bulk precipitates were obtained by chemical bath deposition (CBD) in a well-closed reactor. X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy, thermal analysis, elemental analysis and leaching have been used to characterize solids and thin films. It has been shown that the proportion of cadmium cyanamide in solids may vary from about 50% to 2% according to physicochemical conditions in solution (time after CBD, ammonia concentration) and that CdO results from CdCN2 after air annealing of thin films. This last step also increases the crystallinity of the films. 相似文献