Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

IC制造中真实缺陷轮廓模型的比较

本文对现有的IC制造中真实缺陷轮廓的建模方法进行了比较,得到了一些有意义的结果。该结果为进行有效的集成电路(IC)成品率预报及故障分析提供了有益的借鉴。     

XD－YES：IC功能成品率模拟器的实现

首先建立缺陷空间分布和粒径分布的模型，并讨论了缺陷通过版图产生电路错误的过程，给出了ＩＣ功能成品率模拟器ＸＤ－ＹＥＳ的实现。用ＸＤ－ＹＥＳ对微电子测试图和实际ＩＣ的功能成品率模拟和分析表明，其结果与实际符合很好，从而表明ＸＤ－ＹＥＳ的可行性和实用性。     

输气管道环焊缝表面裂纹管道极限载荷计算方法

为了便于对天然气长输管道环焊缝缺陷进行准确快速的安全评估,建立了考虑裂纹尖端奇异性的含环焊缝缺陷的有限元模型,计算了不同缺陷尺寸下的管道环焊缝裂纹J积分,分析了焊缝匹配系数及材料硬化指数对J积分的影响,进而研究了基于J积分理论的含缺陷管道的极限载荷影响因素,并在此基础上提出了适用于特定匹配系数和材料硬化指数情况下能够实现J积分及极限载荷快速求解的工程计算公式。研究结果表明:①根据有限元计算结果拟合的工程计算公式具有较高的精度,可以满足较大缺陷几何尺寸范围内J积分求解,实现含环焊缝裂纹缺陷的管道极限载荷求解;②含环焊缝缺陷管道的裂纹J积分与缺陷尺寸、材料属性以及焊缝匹配系数密切相关,含缺陷管道的极限载荷会随着裂纹尺寸的增加而降低,而随着材料硬化指数的增大而增大;③对含环焊缝中心线处表面裂纹的X80钢制管道而言,低匹配焊接管道极限承载能力要弱于高匹配或等匹配焊接管道。结论认为,该研究成果可为现役输气管道的安全评价及完整性管理提供参考。     

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si_0.2Ge_0.8 relaxed buffer layer degrades the mobility and the leakage current of pMOSFETs and p⁺n junctions fabricated therein. Annealing in the range 550–650 °C prior to gate stack deposition improves the device performance, although there is no marked change in the TD density. From this, it is concluded that the annealing may reduce the density of point defects grown in during the epitaxial deposition.     

Fabrication and Characterization of Two‐Photon Polymerized Features in Colloidal Crystals

The fabrication and characterization of two‐photon polymerized features written within and outside of colloidal crystals is presented. Two‐photon polymerization (TPP) response diagrams are introduced and developed to map the polymerization and damage thresholds for features written via modulated beam rastering. The use of tris[4‐(7‐benzothiazol‐2‐yl‐9,9‐diethylfluoren‐2‐yl)phenyl]amine (AF‐350) as an initiator for TPP is demonstrated for the first time and TPP response diagrams illustrate the polymerization window. These diagrams also demonstrate that the polymerization behavior within and outside of colloidal crystals is similar and electron microscopy reveals nearly identical resolution. Fluorescence confocal microscopy further enables visualization of non‐self‐supporting, three‐dimensional TPP features within self‐assembled photonic crystals. Finally, microspot spectroscopy is collected from a two‐photon feature written within a colloidal crystal and this is compared with simulation.     

自动缺陷分类系统在超声扫描显微镜中的应用

介绍了超声扫描显微镜中的一种自动缺陷分类系统.该系统采用连通区域标记技术,分析缺陷的具体特征,根据设定阈值将它们分类,由此可以判断哪些是可以接受的缺陷,哪些是需要检出的严重缺陷.系统自动分析的特征,减少了缺陷分析时间和主观性造成的缺陷分类错误,使得分析结果更加精确,重复性更高.     

离子法入机Ⅶ Sta平台向掺杂工艺的无缝可变换性

离子注入机ⅦSta平台对≤130 nm尺寸CMOS工艺在整个能量和剂理范围提供单片注入.这些注入机的特征是硬件和设计原理通用,并包含离子束注入角控制、剂量测定和终端站设计.这种方法对重叠剂量范围能使工艺可完全互换,并对引起制造所有权成本(COO)降低提供了最大的灵活性.一个完整工艺的透彻性需要剂量形貌特征精确匹配,并很好地说明这一能力、晕圈效应、VT和延展注入.此外,也证实了ⅦSta平台的单片设计消除了缺陷来源,确保了无风险工艺互换.     

红外激光薄膜表面缺陷研究

薄膜缺陷是影响红外激光薄膜元件抗激光损伤的重要因素之一,长期以来一直是人们关注和研究的问题。本文介绍了红外激光薄膜缺陷的种类、特点及成因,在此基础上,分析了不同厂家镀膜材料与不同镀膜速率对薄膜表面缺陷密度的影响,并且得出了镀制激光薄膜所需的合适材料与速率,最后利用有限元方法对典型的节瘤与陷穴缺陷受激光作用进行了模拟分析,结果表明:节瘤缺陷种子深度小且直径大的缺陷产生的温升与应力较大,陷穴缺陷随直径增大,其产生的温升与应力也较大。     

AOI系统在PCB中的应用

针对PCB制造过程中的缺陷,主要介绍自动光学检测(AOI)系统的作用、工作原理、生产流程、主要组成部分及主要技术模块。