The suitability of round clinching tools for high strength structural steel

The use of light gauge steel framing is increasing rapidly. New methods for joining frames are being sought. One of the most promising methods is clinching. Clinching has been used for almost 20 years. There has been much research into the method, the tools, suitable materials and applications. Few articles have been published concerning clinching of high strength structural steels, which are currently the most relevant materials for house construction.This study included 11 different clinching methods. In total, 469 test pieces were produced. Despite the high strength of the materials, all the clinching methods that were examined could be used satisfactorily. The most significant result was that a round tool is appropriate for all the materials tested. In fact, in comparison with results obtained using other types of tool, when the methods were ranked by maximum shear load capacity, the round design appeared in the top three classes seven times out of nine.     

高热流密度电加热元件

本文论述了用于液态金属钠热工水力性能研究的高热流密度模拟电加热元件的结构特点、材料选择、热电偶设置及其他与棒束传热实验研究有关的问题。     

大掺量粉煤灰轻质墙体砌块的研制

大掺量粉煤灰轻质墙体砌块是以粉煤灰为主要原材料 ,普通硅酸盐水泥为胶凝材料 ,配以各种外加剂 ,经发泡剂发泡 ,在常温、常压条件下养护而成。具有重量轻、导热系数小、抗冻性高以及粉煤灰掺量大、成型方便、工艺简单、投资小、见效快等优点。     

单轴传动滚切式双边剪薄钢板剪后“错牙”及“飞边”的原因分析与对策

针对单轴传动滚切式双边剪生产过程中出现的薄钢板经双边剪剪后出现“错牙”及“飞边”的问题,从多个方面入手对薄钢板出现“错牙”及“飞边”的原因进行了分析对比,提出了相应的解决方案,对今后滚切式双边剪的设计、制造及安装调试有借鉴和参考价值。     

高压玻璃钢管道的研制及在油田中的应用

本文介绍了高压玻璃钢管道的特性及在我国油田的应用情况。     

碳素材料超声检测的信号处理方法

针对碳素材料超声无损检测存在信噪比较低的问题,从自相关性出发分析了典型超声检测信号的组成成分,提出了在自相关分析的基础上的小波去噪思想,探讨了自相关分析和小波分析相结合的信号处理方法。利用此方法进行实际超声信号分析效果良好。     

Kinetic of CO2 absorption and carbamate formation in aqueous solutions of diethanolamine

The absorption rates of CO₂ into aqueous solutions of Diethanolamine (DEA) with varying concentrations from 0.2 to 4M and temperature range from 293 to 323 K were measured by using a laboratory stirred reactor. The CO₂ partial pressure was varied in a range that the reaction would occur in pseudo first order regime. Experimental data were analyzed and the kinetic parameters associated with the reaction were determined. The activation energy for the deprotonation of the intermediate zwitterion was estimated at about 11.4 kcal/mol. The contribution of carbamate formation to the overall absorbed CO₂ was experimentally evaluated and found to be of the order of 100%.     

炉衬产生的氧对真空钢液脱氮的动力学影响

采用 99.99%氧化镁砂捣打炉衬的 2 0kg真空感应炉 ,研究了超低碳钢熔炼时炉衬产生的氧对真空钢液脱氮的影响。试验结果表明 :钢液中氧含量在 1 2 0× 1 0 - 6 时 ,脱氮的限制性环节是界面化学反应 ;随炉衬中氧的逸出 ,当钢液中氧含量在 5 1 0×1 0 - 6 时 ,真空钢液脱氮处于界面化学反应和液相边界层扩散控制的边缘区域 ,脱氮速率降低     

Rare earth oxides as carbon oxidation catalysts

The behavior of a number of rare earth oxides as catalysts for the oxidation of graphite in air has been investigated by the methods of thermal analysis. Of the oxides studied, only CeO₂ showed significant activity in accelerating the gasification of graphite by oxygen between 500 and 1000°C. Cerium salts, which decompose to a finely dispersed oxide phase at low temperatures, e.g. Ce (III) nitrate and ammonium Ce (IV) nitrate, were found to be very active catalysts. The catalytic effect may be due to a redox process involving the cyclic conversion of the oxide from the Ce (IV) to the Ce (III) oxidation state, or the oxide particles may provide sites for the dissociative chemisorption of oxygen.     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.