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31.
Giorgio Benedek Joseph R. Manson Salvador Miret-Artés 《Advanced materials (Deerfield Beach, Fla.)》2020,32(25):2002072
Atom scattering is becoming recognized as a sensitive probe of the electron–phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye–Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron–phonon interaction, which is measured in an atom surface collision. 相似文献
32.
Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour. 相似文献
33.
Thin Film Thermoelectric Metal–Organic Framework with High Seebeck Coefficient and Low Thermal Conductivity
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34.
Spinel LiSr0·1Cr0·1Mn1·8O4 was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr0·1Cr0·1Mn1·8O4 (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr2+ and Cr3+ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention. 相似文献
35.
文章归纳了2020年电子电路产业一些技术热点,主要有5G电路板设计和基材,制造方面半加成法、3D打印、直接金属化孔电镀和垂直互连结构等技术,以及集成电路封装载板技术。 相似文献
36.
Upconversion phosphors are known as a material system that can convert near-infrared light into visible/ultraviolet emissions by sequentially absorbing multiple photons. The studies on upconversion materials often use two rare earth (RE) ions as a sensitizer-activator pair. We investigated the influences on luminescence intensity depending on Cr-doping content (x) of hexagonal NaLu0.98–xCrxF4Er0.02 (x = 0–0.9) upconversion material by substituting Lu3+ ions with Cr3+in the absence of Gd3+. The change in upconversion luminescence intensity appears with saddle-like shape. We suggest that Cr3+ ions play the dual role as a constituent in host lattice and a sensitizer in the upconversion process. Optimal conditions for gaining the strongest upconversion emission correspond to x = 0.3–0.5, where there are effective energy transfers between Cr3+ and Er3+ ions and CrEr dimers. Apart from these values, the emission intensity decreases rapidly which can be ascribed to the absence of multiple-photon absorption for the case of low Cr3+ contents, and to the coupling between Cr3+ and/or Er3+ ions for the case of high Cr3+ contents. Magnetization and electron-spin-resonant measurements were performed to understand the correlation between the optical and magnetic properties. 相似文献
37.
《Ceramics International》2022,48(4):5040-5053
Using tailings as material to prepare glass-ceramic is an excellent way to achieve the resource utilization of solid waste. However, at present, researches on the solidification and migration of heavy metals are limited. Therefore, in this study, ten groups of samples were prepared by controlling sintering temperatures. The solidification, migration, and leaching behavior of non-volatile and volatile heavy metals were studied. The research showed that, with the increase of temperature, the properties of the samples were improved. Fe participated in the phase transformation and evolved into insoluble iron pyroxenes solid solution, while Pb was homogeneously distributed in the glass matrix of glass-ceramics. The leaching concentrations of Fe and Pb in the glass-ceramics were 0.055 mg/L ~0.087 mg/L and 0.074 mg/L ~0.140 mg/L, which were far below the threshold value. The results showed that heavy metals can be effectively solidified in glass-ceramics and have good environmental benefits. 相似文献
38.
Tatsuro Tanaka Yoshifumi Maeda Shinji Yamamoto Toru Iwao 《Electrical Engineering in Japan》2019,207(1):15-23
The arc welding has been used in various welding methods because it is inexpensive and high in strength after welding. However, it is a problem that accidents such as collapse of the bridge occur because of the welding defects. The welding of low cost and high productivity is required without the welding defects. The pulsed TIG welding is inexpensive and capable of high‐quality welding. The electromagnetic force contributing to penetration changes because the transient response of arc temperature and iron vapor generated from anode occurs. However, the analysis of pulsed TIG welding with metal vapor has been elucidated only metal vapor concentration near anode with transient phenomenon and heat flux. Thus, the theoretical elucidation of penetration depth with control factor has not been researched. In this paper, the contribution of metal vapor mass at the periphery part of pulsed arc to the electromagnetic force in the weld pool is elucidated. As a result, the iron vapor mass at periphery part decreased with increasing the frequency. The iron vapor was stagnated at axial center within one cycle. The electromagnetic force to the penetration depth direction in weld pool increased at axial center. Therefore, the metal vapor mass at periphery part plays an important role for the electromagnetic force increment at axial center. 相似文献
39.
40.
Anh Tuan Thanh Pham Oanh Kieu Truong Le Dung Van Hoang Truong Huu Nguyen Trang Huyen Cao Pham Phuong Thanh Ngoc Vo Thang Bach Phan Vinh Cao Tran 《Journal of the European Ceramic Society》2021,41(6):3493-3500
Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm2/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm2/Vs, low resistivity of 5.3 × 10?4 Ωcm, and good transmittance of 83.3 %. 相似文献