Efficient red phosphorescent organic light emitting diodes based on solution processed all-inorganic cesium lead halide perovskite as hole transporting layer

An efficient red phosphorescent organic light emitting diode (PhOLED) has been realized by utilizing a composite hole transporting layer comprised of all-inorganic cesium lead halide perovskite CsPbBr₃ via spin-coating and 1,3-bis(9-carbazolyl) benzene (mCP) by vacuum depositing, in which CsPbBr₃ film is used as a hole transporting layer and mCP plays a dominant role in electron and exciton blocking. And this PhOLED shows a saturated red emission coordinated at CIE (0.65, 0.33) driven at 7.5 V, a maximum brightness of 20,750 cd/m², and a maximum current efficiency of 10.64 cd/A, which is as 1.87 times as that 5.68 cd/A of the reference PhOLEDs based on traditional small organic molecular hole transporting material N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzi (NPB). The electroluminescent (EL) spectra and the energy level alignment of different PhOLEDs are investigated. The enhanced EL performances are ascribed to improved hole injecting and transporting behaviors, and better electron and exciton confinements by introducing the composite hole transporting layer CsPbBr₃/mCP.     

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

The structural property of GaSb epilayers grown on semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using Triethylgallium (TEGa) and trimethylantimony (TMSb),was investigated by variation of the Sb:Ga (V/III) ratio.An optimum V/III ratio of 1.4 was determined in our growth conditions.Using transmission electron microscopy (TEM),we found that there was an interfacial misfit dislocations (IMF) growth mode in our experiment,in which the large misfit strain between epilayer and substrate is relaxed by periodic 90 deg.IMF array at the hetero-epitaxial interface.The rms roughness of a 300 nm-thick GaSb layer is only 2.7 nm in a 10 μm×10 μm scan from atomic force microscopy (AFM) result.The best hole density and mobility of 300 nm GaSb epilayer are 5.27×10 6 cm 3 (1.20×10 6) and 553 cm 2 ·V 1 ·s 1 (2340) at RT (77 K) from Hall measurement,respectively.These results indicate that the IMF growth mode can be used in MOCVD epitaxial technology similar to molecular beam epitaxy (MBE) technology to produce the thinner GaSb layer with low density of dislocations and other defects on GaAs substrate for the application of devices.     

Experimental and theoretical formability analysis using strain and stress based forming limit diagram for advanced high strength steels

In this study, experimental and numerical analyses of Forming Limit Diagram (FLD) and Forming Limit Stress Diagram (FLSD) for two Advanced High Strength Steel (AHSS) sheets grade DP780 and TRIP780 were performed. Initially, the forming limit curves were experimentally determined by means of the Nakazima forming test. Subsequently, analytical calculations of both FLD and FLSD were carried out based on the Marciniak–Kuczinsky (M–K) model. Additionally, the FLSDs were calculated using the experimental FLD data for both investigated steels. Different yield criteria, namely, von Mises, Hill’s 48, and Barlat2000 (Yld2000-2d) were applied for describing plastic flow behavior of the AHS steels. Both Swift and modified Voce strain hardening laws were taken into account. Hereby, influences of the constitutive yield models on the numerically determined FLDs and FLSDs were studied regarding to those resulted from the experimental data. The obtained stress based forming limits were significantly affected by the yield criterion and hardening model. It was found that the forming limit curves calculated by the combination of the Yld2000-2d yield criterion and Swift hardening law were in better agreement with the experimental curves. Finally, hole expansion tests were conducted in order to verify the different failure criteria. It was shown that the stress based forming limit curves could more precisely describe the formability behavior of both high strength steel sheets than the strain based forming limit curves.     

起落架缓冲器阻尼孔特性分析

当飞机着陆下沉速度较快时,油-气式缓冲器因快速压缩会引起缓冲器内部压力剧增和阻尼孔处产生射流现象。为减小缓冲器内部压力和油液流经阻尼孔的流速,以油液入口速度、阻尼孔的孔长、孔径和倒直角为研究对象,通过单因素法对各因素变化引起的缓冲器内压力和流速的变化特性进行分析。通过Fluent软件进行仿真计算,结果表明:油液入口速度越大,缓冲器内部压力和油液流速也越大;孔长对缓冲器内部压力影响较小,对阻尼孔中油液流速影响较大;随孔径减小,缓冲器内压力和阻尼孔中油液流速不断增大;倒直角对缓冲器内压力影响较小,但可降低阻尼孔中的油液流速。研究结果可为缓冲器的优化设计提供参考。     

锥孔滚压头的开发设计

为了解决泥浆泵液力端泵头1：6锥孔表面加工精度不高,在使用中出现锥孔表面剌蚀而报废的问题,本文介绍了一种性价比较高,简单易行,安全可靠的锥孔滚压工艺方法,通过该工艺方法的实施,提高了锥孔表面加工精度和硬度,达到了设计要求,保证了泵头质量,延长了泵头的使用寿命,减少了阀及阀组件更换频次,大大的降低了运行成本,为用户安全生产提供了优质的产品保障。     

静压PHC管桩穿越卵石层引孔施工技术探讨

本文结合云霄翔球广场一期工程静压PHC管桩施工实例,对2#楼主楼采用先引孔后压桩法施工技术和施工工艺,使桩端穿过砂层及卵石层进入持力层深度及有效桩长满足设计及规范要求,以保证施工质量和工期。     

露天矿垂直与斜深孔爆破特征分析

根据永平铜矿实际爆破情况,运用爆轰理论,对露天矿垂直与倾斜两种中深孔的爆破特征进行了分析.分析从底盘抵抗线、孔网参数、大块与粮底、钻孔效率与作业成本和爆破地震效应五个方面入手,阐述了两种不同类型钻孔的不同爆破作用机制及其爆玻效果,肯定了倾斜孔在露天台阶爆破中所具有的独特优越性.     

非渗透抗压钻井液处理剂KSY的研究与应用

非渗透抗压钻井液技术是解决钻进压力衰竭地层、裂缝发育地层、破碎或弱胶结性地层、低渗储层及深井长裸眼大段复杂泥页岩和多套压力层系等地层的压差卡钻、钻井液漏失和井壁垮塌等复杂问题以及油气层损害问题的关键技术,其核心是非渗透抗压处理剂。研制开发了非渗透抗压处理剂KSY,并进行了钻井液性能评价和泥饼结构分析,结果表明,KSY加入钻井液后,对钻井液流变性影响小,滤失量明显降低,形成的封堵膜薄,易于返排,封堵强度高,能够有效提高地层的承压能力和破裂压力,保护油气层效果好。现场应用表明,KSY能够显著提高地层承压能力,防止井壁坍塌,保持井径规则,有利于固井和完井作业。     

PCB孔铜断裂失效分析探讨

针对PCB在SMT后出现的通孔开路问题,本文结合孔铜断裂失效案例,通过CT、金相切片、SEM及热分析等分析手段来进行论证,分析PCB孔铜断裂的失效机理,并给出了预防控制建议.     

基于未确知测度理论的采矿方法优选

为选择适合贵州某金矿的最佳采矿方法,以解决该矿开采难度大与开采成本高的问题,根据矿山实际地质条件,初选出了适用于该矿体的采矿方法。将数值模拟与未确知测度理论相结合,利用数值模拟分析三种备选采矿方法的安全性,同时作为优选模型的指标。结合矿山实践经验,优选出采场生产能力等11项影响采矿方法选择的指标,利用信息熵计算各指标的客观权重,引入置信度识别准则进行评价,同时按照优越度进行排序,构建基于未确知测度理论的采矿方法优选模型。通过综合比较分析,最终确定最佳的采矿方法即下向中深孔落矿嗣后充填法,该方法可以有效解决目前开采遇到的问题,扩大矿山生产能力,降低采矿成本,提高矿山经济效益。