数据融合在C^3I系统中的应用

多传感器数据融合技术已在军事领域受到广泛重视，并逐步走向实际应用，本文简要介绍它的一般组成、特点以及在军事Ｃ＾３Ｉ系统应用中的主要功效。     

基于B／S的国贸商务信息管理系统开发研究

阐述了B/S模式的基本原理及特点,实现了基于B/S模式的国贸商务信息系统,并对实现中采用的技术作了简要的讨论。此系统是一个跨区域、跨平台的商务信息管理系统,能够实现国贸公司内部信息,如外销、采购、库存等信息的实时交互,使信息得到及时的传递。     

Multi‐layered flat‐surface micro‐optical components directly molded on an LCD panel

Abstract— We have developed a process to fabricate optical components, such as a lens, prism, or diffuser, directly on to a glass substrate. Processes include precision mastering by diamond cutting and multi‐layer photopolymer (2P) molding to realize flat surfaces and the integration of multiple components with an alignment within a few micrometers.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

镀液中SiC含量和粒径对Ni-P-SiC复合化学镀层性能的影响

采用化学镀方法制备了Ni P SiC复合镀层 ,系统研究了镀液中SiC含量和粒径对镀层结构及显微硬度的影响。结果表明 ,镀层中SiC析出量随镀液中SiC含量的增加而增加 ,在SiC含量一定的情况下 ,当SiC粒径为 7.0 μm时 ,析出量最大 ;镀液中SiC的含量和粒度对原始镀层的硬度影响不大 ,但对 4 0 0℃热处理后的镀层硬度有显著影响     

从加氢脱硫（HDS）循环气中脱除H2S和C1—C4组分

简要介绍了炼油厂生产低硫燃料过程中处理循环氢气物流中的H2 S和轻质烃的几种方法 ,并通过实验对比论述非水溶型硫回收技术可降低氢气损失、增大轻质烃脱除率的优越性     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

基于B/S模式的汽车零件销存管理信息系统的设计与实现

对于采用连锁经营的汽车零件销售企业来说,各经营网点分布在同一城市的不同区域或不同城市,为了在充分利用原有信息和资源的基础上处理好许多中间环节,减少人员工作量,保证企业销存状态良好,提高管理效率,设计了基于B/S模式的汽车零件销存管理信息系统的技术方案,详细讨论系统的功能设计以及实现技术。     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.