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51.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
52.
The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates
is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor.
The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties
and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow
is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is
higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature
hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence
spectrum is dominated by strong excitonic lines. 相似文献
53.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
54.
55.
轴端沟槽底部激光强化工艺参数优化研究 总被引:1,自引:1,他引:0
分析了选用不同激光能量密度对HT300进行表面强化处理时,材料表面呈现的四种状况;未相变硬化、相变硬化、表面微熔与表面熔凝的金相组织。根据工艺要求,选取相变硬化方法对轴端沟槽底表面进行处理。分析了工件激光处理方法并通过试验研究,寻找轴端沟槽底部激光强化工艺参数;激光功率(P)、光斑直径(D)及扫描速度(V)的优化组合。硬度测试及耐磨性能试验表明:激光相变处理和激光熔凝处理后轴端沟槽底部表面较表面感应淬火硬度分别提高7%和34%,绝对磨损体积分别下降了13%和25%。实践证实,对轴端沟槽底部激光相变硬化处理方法较其他表面处理方法工艺简单,加工工件符合技术要求,试验结果对零件表面处理提供了可靠依据。 相似文献
56.
P. Kurpas A. Oster M. Weyers A. Rumberg K. Knorr W. Richter 《Journal of Electronic Materials》1997,26(10):1159-1163
Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. 相似文献
57.
单元系T—p相图的数学结构 总被引:1,自引:0,他引:1
作者以化学元素的稳定单质为基准,推演出了任意物质M_i(相态Ω)的热力学生成活度{相态Ω)的函数形式:?D_Ω数值的大小体现着相态Ω的热力学相对稳定性.根据集合论原理沿D(稳定性)座标取极大值的方法把物理性质互不连续的各个异相态连结在一起,建立了单元系在T-p面上的优势分布方程(PSDE):■作者以H_2O为实例,计算了T-p相图,与实验相图基本一致. 相似文献
58.
王纪鑫 《材料科学技术学报》1992,8(1):44-50
The general relationship between binary phase diagrams and the thermodynamic properties was system-atically derived without any assumption.A procedure was presented to estimate the thermodynamic proper-ties from the binary phase diagrams. 相似文献
59.
The modified direct observation method is employed for the determination of the liquidus lines in the (Hg1_xZnx)1_yTey, ternary system. The liquidus temperatures of the ternary samples of various compositions withx from 0.05 to 0.30 andy from 0.5 to 0.9 are measured. The temperature-composition phase diagrams and some liquidus isotherms are established for
this system. 相似文献
60.
An Arctangent Unwrapping Technique of Photoelasticity Using Linearly Polarized Light at Three Wavelengths 总被引:2,自引:0,他引:2
Abstract: In the automatic measurements of the principal stress directions ψ and the total relative phase retardation ρ tol , ψ and ρ tol can be easily obtained by the phase unwrapping method using the arctangent function. However, only some published works exist on the measurements of ψ and ρ tol by photoelastic techniques using a linearly polarised incident light source. This paper presents the technique of applying an unwrapping by means of the arctangent function to photoelasticity. The technique overcomes the error associated with the quarter-wave plate by using an incident light of different wavelength and does not need an interpolation for the determination of ψ . The technique is validated by determining ψ and ρ tol for the well-known circular disk subjected to a diametral compressive load model. 相似文献