SiCp/Cu电子封装材料研究进展

详细介绍了SiCp/Cu电子封装材料的主要制备方法及应用情况,目前国内外SiC/Cu电子封装材料的主要制备方法有粉末冶金法、放电等离子烧结法、无压浸渗法、压力浸渗法和反应熔渗法,其中包覆粉末热压烧结法和压力浸渗法是目前研发应用较广泛的两种方法.分析了SiC与Cu之间的界面反应机理,并指明SiCp/Cu电子封装材料的制备要解决的主要问题就是在SiC与Cu之间设置界面阻挡层,进而详细阐述了SiCp/Cu电子封装材料主要界面改性方法及其调控效果,并指出目前应用最好的两种方法是物理气相沉积法和化学气相沉积法.     

高体积比SiCp/6063Al复合材料的铝基钎料制备及钎焊工艺研究

采用快速甩带技术制备了(Al-10Si-20Cu-0.05Ce)-1Ti(质量分数/%)急冷箔状钎料,并对60%体积分数的SiCp/6063Al复合材料进行真空钎焊实验,然后对钎料及接头的显微组织与性能进行测定和分析。结果表明,急冷钎料的微观组织细小、成分均匀,厚80~90μm,主要包含Al、CuAl2、Si和Al2Ti等相。当升高钎焊温度(T/℃)或延长保温时间(t/min),SiCp/钎料界面的润湿性改善,6063Al基体/钎料间互扩散和溶解作用增强,接头连接质量逐渐提高。当T=590℃、t=30min时,接头抗剪强度达到112.6 MPa;当T=590℃、t=50min时,少量小尺寸SiCp因液态钎料排挤而分散于钎缝,因加工硬化而使接头强度递增7.3%。然而,当T≥595℃、t≥60min时,SiCp偏聚于钎缝,导致接头组织恶化,且剪切断裂以脆性断裂为主。综合考虑钎焊成本与接头强度使用要求,确定最佳钎焊工艺为590℃、30min。     

化学镀SiCp／Ni－P复合镀层与基体结合强度及其影响因素

论述了ＳｉＣｐ／Ｎｉ－Ｐ复合镀层与钢基体的结合强度及其影响因素。复合镀层中离界面５μｍ厚度以内区域的组成及应力状态对镀层／基体的界面结合有决定性作用，在该区域以外ＳｉＣ粒径变化不影响镀层的结合强度。适当的热处理可提高界面结合力。     

Corrosion Behavior of SiCp／2024 Al Matrix Composites in 3.5 wt pct Sodium Chloride

The influences of volume fraction and particle size of SiC particulate reinforcements on the corrosion characteristics of SiCp/2024Al metal matrix composites in aerated 3.5wt pct NaCl aquecus solution were investigated.The electro-chemical behavior was investigated by prtentiodynamic polarization and electrochemical impedance spectroscopy, the general corrosion behavior of the composites was studied further by immersion tests.The results showed that pitting susceptibility was about the same for the composites and the alloy.The corrosion potentials were also independent of SiC phase.The corrosion resistance for the composites decreased as the volume fraction increased or particle size decreased.     

Optimization of Machining Characteristics for Al／SiCp Composites using ANN／GA

The present work is focused on optimization of machining characteristics of Al/SiCp composites.The machining characteristics such as specific energy,tool wear and surface roughness were studied.The parameters such as volume fraction of SiC,cutting speed and feed rate were considered.Artificial neural networks(NN) was used to train and simulate the experimental data.Genetic algorithms(GA) was interfaced with ANN to optimize the machining conditions for the desired machining characteristics .Validation of optimized results was also performed by confirmation experiments.     

Effects of volume ratio on the microstructure and mechanical properties of particle reinforced magnesium matrix composite

In the present study, the AZ91 alloy reinforced by (submicron + micron) SiCp with four kind volume ratio was fabricated by the semisolid stirring casting technology. The influence of volume ratio between submicron and micron SiCp on the microstructure and mechanical properties of Mg matrix was investigated. Results show that the submicron SiCp is more conducive to grain refinement as compared with micron SiCp. With the increase of volume ratio, the submicron particle dense regions increase and the average grain size decreases. The yield strength of bimodal size SiCp/AZ91 composite is higher than monolithic micron SiCp/AZ91composite. Both Δσ_Hall–Petch and Δσ_CTE increase as the volume ratio changes from 0:10, 0.5:9.5, 1:9 to 1.5:8.5. Among the composite with different volume ratio, the S-1.5 + 10-8.5 composite has the best mechanical properties. The interface debonding is found at the interface of micron SiCp-Mg. As the increase of volume ratio, the phenomenon of interface debonding weakens and the amount of dimples increases.     

7075Al/SiCp复合材料的热压缩变形流变应力和组织行为

采用圆柱试样在Gleeble-1500热模拟机上对喷射沉积7075Al/SiCp复合材料进行高温压缩变形实验,实验条件为:变形温度300～450℃,应变速率0.001～1s-1.结果表明:7075Al/SiCp复合材料的流变应力大小受到变形温度和应变速率的强烈影响,流变应力随应变的增加而逐渐增加,出现一峰值后逐渐下降;流变应力随变形温度的升高、应变速率的降低而降低.可用Zener-Hollomon参数的双曲正弦形式来描述7075Al/SiCp复合材料高温压缩变形流变应力.随着变形温度的升高和应变速率的降低,7075Al/SiCp复合材料热变形过程中SiCp的分布逐渐均匀化,有利其热加工性能的改善.     

SiCP/2024Al复合材料的阳极氧化研究

为了研究SiCP/2024Al复合材料阳极氧化的保护效果,用电化学方法、浸泡试验和盐雾试验研究了该复合材料及相应的施加阳极氧化保护试样在3.5%NaCl溶液中的腐蚀行为,并用扫描电子显微镜(SEM)对腐蚀形貌和氧化膜的微观形态进行了观察.结果表明:SiCP/2024Al经过阳极氧化后在3.5%NaCl溶液中的耐蚀性明显提高,Ecorr和Epit正移150 mV,Icorr从3.650 μA减小到0.358 μA,腐蚀速率由0.336 mm/a下降到0.122 mm/a;虽然SiC颗粒的存在影响了阻挡层的连续性,但多孔层仍能在电解质/材料界面不断生成,并且多孔层上的孔隙可以在封孔过程中得以闭合.     

高SiCp或高Si含量电子封装材料研究进展

高体积分数的SiCp/Al复合材料和高Si含量Al-Si合金具有高导热、膨胀系数可调、低密度等特性,成为理想的电子封装材料.结合笔者的研究成果,详细介绍了目前国内外该材料的制备工艺及应用情况,指出了各工艺方法在规模化商业生产中存在的不足,展望了未来研究及发展的方向.     

SiCp/Al电子封装复合材料的现状和发展

随着微电子技术的高速发展，SiCp/Al作为新型的电子封装材料受到了广泛的重视。根据近年来报导的有关资料，对SiCp/Al电子封装复合材料的性能、制备工艺及应用发展进行了综述，并指出了未来的研究方向。