Modified Imidazoles: Degradation Inhibitors and Adhesion Promoters for Polyimide Films on Copper Substrates

Polyimide films on copper substrates that are exposed to elevated temperatures and an oxidizing environment will be subject to degradation. In order to halt this degradation without changing the properties of the system, a polymeric agent could be placed between the polyimide and the copper. This paper will investigate three such materials that will not only slow down the degradation of the polyimide and the oxidation of the copper, but will also improve adhesion within the system. Fourier transform infrared reflection-absorption spectroscopy (FTIR-RAS) will be used to investigate the polyimide/polymeric agent/copper system.     

水稻花后衰退珠心和胚乳发育初期Ca2+的超微细胞化学定位

应用焦锑酸盐沉淀技术对水稻花后衰退珠心和胚乳发育初期进行了Ca^2 的超微细胞化学定位。结果显示在初始衰退的珠心细胞中Ca^2 主要分布于液泡膜上和核内；在衰退中期的珠心细胞中，Ca^ 主要分布在核膜、液泡膜及质膜上；在严重衰退的珠心细胞，Ca^2 仅存在于液泡中。珠心降解的Ca^2 跨过胚囊壁，通过质外体向胚乳内运输；发育初期的胚乳细胞，Ca^2 主要位于胞间隙，线粒体和液泡中也有少量分布。讨论了Ca^2 与珠心PCD的关系。     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

多传感器检测中的数据溶合技术

多传感器检测是使用多种(或多个)传感器对同一被测对象进行广泛的测量。应用多传感器检测技术和多传感器数据溶合技术对车削加工中的零件外圆尺寸检测进行了实验研究,结果表明,多传感器检测技术能够满足现代检测技术对信息的精确要求,使得检测监控系统更加准确、可靠。     

多丝正比室中电子的最大漂移时间

多丝正比室中电子的最大漂移时间是逃逸门电路中的一个重要参数。这个参数的选择将影响逃逸门工作方式的多丝正比室的整体性能。通过实验测量得到了多丝正比室中电子的最大漂移时间的实际值和最大漂移时间随多丝正比室工作状态的变化，测量结果在实际中得到应用。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

1，2─双（二乙基膦基）乙烷的合成

以二乙基氯化膦为原料，经乙炔化及加氢两步合成了１，２－双（二乙基膦基）乙烷，产率超过文献值。用红外光谱和核磁共振波谱分别测定了结构。     

Pyrolysis of tertiarybutylphosphine at low pressure

The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH₂ and C₄H₉ radicals. These undergo subsequent reactions to form the stable products C₄H₈, PH₃ and H₂, with smaller amounts of P and P₂ being produced. The production of the sub-hydride PH₂ using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.