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941.
942.
介绍了调剖剂XJF的配方,讨论了影响调剖剂性能的配方因素(膨润土含量、HPAM溶液浓度、XJ用量及添加剂Fc的浓度),考察了封堵能力和应用范围,简介了在火烧山油田现场试验的结果。 相似文献
943.
Shubneesh Batra Nanseng Jeng Akif Sultan Kyle Picone Surya Bhattacharya Keun-Hyung Park Sanjay Banerjee David Kao Monte Manning Chuck Dennison 《Journal of Electronic Materials》1993,22(5):551-554
When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal
budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface
to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon
substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the
leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in
the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection
from the interface. 相似文献
944.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
945.
M. R. Islam R. V. Chelakaea J. G. Neff K. G. Fertitta P. A. Grudowski A. L. Holmes F. J. Ciuba R. D. Dupuis J. E. Fouquet 《Journal of Electronic Materials》1995,24(6):787-792
AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen
contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure
of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on
these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence,
and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly
much greater than those grown with the regular-grade TMA1. The use of AsH3 purification improves the PL intensity. 相似文献
946.
A. Benati M.A. Butturi C. Capperdoni M.C. Carotta G. Martinelli M. Merli L. Passari G. Sartori R. Van Steenwinkel G.M. Youssef 《Solar Energy Materials & Solar Cells》1996,43(2):183
The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm2) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies.The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer.The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized.This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers. 相似文献
947.
分子结构对增塑聚氯乙烯性能的影响 总被引:2,自引:0,他引:2
研究了聚合度、分子量分布和支化结构对增塑聚氯乙烯加工流变性能和物理力学性能的影响。结果表明,增塑PVC的加工流变性能随聚合度的增加而恶化;拓宽分子量分布和引入支化结构均有利于加工流变性能的提高;增塑PVC的拉伸强度随聚合度的增加而提高,而压缩永久变形却随之减小;分子量分布对物理力学性能的影响不大;支化PVC的拉伸强度略有下降。 相似文献
948.
In this work we investigated the mechanism of the electrochemical intercalation reactions in rf sputtered nickel oxide thin films electrodes by two techniques: mechanical stress change measurements by means of an optical technique and mass changes using an electrochemical quartz microbalance (EQCM). The experiments were performed in alkaline electrolytes containing cations of the first column of the periodic table. Reversible mass and volume changes were observed. In order to explain these experimental results, an exchange reaction is proposed, in which the oxidation process is accompanied by the deinteractional of a relative large number of “light” cations, simultaneously with the intercalation of a smaller number of heaviest cations. 相似文献
949.
本文从无线电通信基本要素出发 ,阐述上行信号和下行信号的无线传播 ,得出上下行信号平衡链路方程 ,并以我国普遍使用的TACS系统和GSM系统为例 ,着重讨论了信号平衡与蜂窝小区设计之间的关系。 相似文献
950.
Gu Junzhong 《计算机科学技术学报》1993,8(4):3-20
In object-oriented database systems(OOBSs),the traditional transaction models are no longer suitable because of the difference between the object-oriented data model(OODM)and the conventional data models(e.g.relational data model).In this paper,transction models for advanced database applications are reviewed and their shortcomings are analyzed.Exchangeability of operations is proposed instead of commuativity and recoverability for using more semantics in transaction management.As a result,an object-oriented transaction model(in short,OOTM)is presented.It is not modeled for some special application,but directly based on object-oriented paradigms.A transaction is regarded as an interpretation of a metho.Each transaction(even subtransactions)keeps relative ACID(Atomicity,Consistency,Isolation,Durability)properties,therefore the special problems appearing in OOBSs such as“long transactions”,“visibility of inconsistent database state”can be solved. 相似文献