全文获取类型
收费全文 | 246733篇 |
免费 | 29056篇 |
国内免费 | 26102篇 |
专业分类
电工技术 | 20887篇 |
技术理论 | 8篇 |
综合类 | 15289篇 |
化学工业 | 57107篇 |
金属工艺 | 10867篇 |
机械仪表 | 14174篇 |
建筑科学 | 9380篇 |
矿业工程 | 3208篇 |
能源动力 | 18873篇 |
轻工业 | 16989篇 |
水利工程 | 2535篇 |
石油天然气 | 5998篇 |
武器工业 | 2212篇 |
无线电 | 32697篇 |
一般工业技术 | 29271篇 |
冶金工业 | 6906篇 |
原子能技术 | 5246篇 |
自动化技术 | 50244篇 |
出版年
2024年 | 947篇 |
2023年 | 4182篇 |
2022年 | 7940篇 |
2021年 | 10149篇 |
2020年 | 8835篇 |
2019年 | 8109篇 |
2018年 | 7320篇 |
2017年 | 9610篇 |
2016年 | 10302篇 |
2015年 | 11535篇 |
2014年 | 12421篇 |
2013年 | 16522篇 |
2012年 | 17905篇 |
2011年 | 21267篇 |
2010年 | 15408篇 |
2009年 | 15029篇 |
2008年 | 15923篇 |
2007年 | 17381篇 |
2006年 | 16309篇 |
2005年 | 13907篇 |
2004年 | 11735篇 |
2003年 | 9391篇 |
2002年 | 7385篇 |
2001年 | 5722篇 |
2000年 | 4843篇 |
1999年 | 3957篇 |
1998年 | 3294篇 |
1997年 | 2672篇 |
1996年 | 2162篇 |
1995年 | 1770篇 |
1994年 | 1560篇 |
1993年 | 1175篇 |
1992年 | 1006篇 |
1991年 | 788篇 |
1990年 | 669篇 |
1989年 | 506篇 |
1988年 | 378篇 |
1987年 | 239篇 |
1986年 | 217篇 |
1985年 | 286篇 |
1984年 | 242篇 |
1983年 | 163篇 |
1982年 | 231篇 |
1981年 | 122篇 |
1980年 | 124篇 |
1979年 | 41篇 |
1978年 | 23篇 |
1977年 | 29篇 |
1959年 | 33篇 |
1951年 | 23篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
961.
962.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
963.
GaP:(N)的背景光谱和发光尖峰 总被引:1,自引:0,他引:1
获得高分辨GaP(N)光致发光光谱,观察到等电子陷陆束缚激子发光中LO和loc多声子发射,其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁,并进行了相应讨论,还观察到局域声子效应--光谱相似定律和相当显著的背景光谱。 相似文献
964.
在宝钢3号高炉计算机系统的开发过程中十分注意系统RAS性能设计。本文介绍了3号高炉计算机系统设计中,为提高系统的RAS性能所采取的各种对策。 相似文献
965.
966.
967.
Anionic copolymerizations of styrene (M1) with excess 1-(4-dimethyl-aminophenyl)-1-phenylethylene (M2) were conducted in benzene at 25°C for 24h, using sec-butyllithium as initiator. Narrow molecular weight distribution copolymers with M?;n = 16.1 × 103 g/mol (M?w/M?n = 1.04) and 38.2 × 103g/mol (M?w/M?n = 1.05), and 24 and 38 moles of M2 per macromolecule, respectively, were characterized by size exclusion chromatography, 1H NMR spectroscopy and DSC. The monomer reactivity ratio, r1 = 5.6, was obtained from the copolymer composition at complete consumption of M1, assuming that the rate constant k22 =0,i.e. r2 =0. The polymers exhibited Tg values of 128 and 119°C, respectively, which correspond to an estimated Tg = 217°C for the hypothetical homopolymer of M2. 相似文献
968.
Backscattered electron (BSE) images of heat-cured concretes show alite grains surrounded by inner C-S-H gel of two distinct grey levels (referred to as two-tone inner C-S-H gel). The lighter rim forms at elevated temperature whereas the darker rim develops during subsequent exposure to moisture at 20 °C. This microstructural feature can potentially be used as an indicator to assess the curing history of a concrete. However, microstructural examinations of room-temperature concretes containing silica fume or which have been exposed to severe conditions (external sulfate, carbonation) also show distinct rims of two-tone inner C-S-H gel.The chemical compositions of the rims were determined by EDX microanalysis in the scanning electron microscope (SEM). Our results show that for heat-cured samples, the different grey levels of the two-tone inner C-S-H are caused by relative differences in microporosity and water content and not by ones in chemical composition. However, in silica-fume blended concrete, sulfate attacked or carbonated specimens the different grey levels of the two-tone inner C-S-H gel were associated with significant differences in chemical composition. This difference allows two-tone inner C-S-H gel arising from heat curing to be distinguished from that arising from these other causes. 相似文献
969.
970.
提出了三维定量储层地质模型及其参数动态预测方法,用该方法可预测储层开采状态,水淹区及剩余油区分布和各剩余油区的可采储量,三维定量储层地质模型的预测图件可为合理开采提供依据。 相似文献