COIL中BHP浓度对发生O_2(~1△)的影响

本文实验研究了BHP的浓度对产生O2（1△）的影响。实验结果表明：当BHP浓度大于3.5M时，Cl2利用率以及O2（1△）的产率将不依赖于BHP浓度的变化而变化，同时，实验结果表明，使用低浓度的BHP对COIL的操作是可行的。     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Measurement of the thermal diffusivity of thin films on substrate by the photoacoustic method

Measurements of the thermal diffusivity of thin films on substrate have been performed by the photoacoustic method. In order to examine the method we have built a new apparatus and proposed (1) a system calibration procedure using optically and thermally thick reference samples and (2) a data analysis procedure based on the RG (Rosencwaig and Gersho) theory. As a result of using a transparent photoacoustic cell, the systematic errors which are caused by stray light have been reduced. With this apparatus, measurements have been performed on platinum, titanium, and stainless steel (SUS304) thin foils (thickness form 50 to 100 µm) with three different liquid backing materials (water, glycerol, and ethyl alcohol). The reproducibility was within ±7% regardless of film thickness and substrate materials.     

Use of helical parameters to generate candidate conformations for crystal packing: illustrative application to a polyimide

This communication describes the application and extension of a method for calculating the helical parameters with which to describe molecular conformations. The method, which was originally developed by Shimanouchi and others, is applied to a polyimide of 3,3′,4,4′-benzophenonetetracarboxylic dianhydride (BTDA) and 2,2-dimethyl-1,3-(4-aminophenoxy)propane (DMDA) which has eight torsional bonds in the chemical repeat unit. Discrete low energy states for these torsions were determined by Ramanchandran energy maps of sequential dihedral pairs or single bond torsional energy diagrams. The total number of possible low energy conformations for these states is 1152 including conformationally related isoenantiomorphs. The method conveniently generates the conformations for subsequent crystal structure packing and refinement. Consideration of these together with the X-ray data of Cheng and co-workers reduces the number to about 15 with about a 2/1 conformation and a c axis of approximately 49.2 Å. Of these, about half appear to be good candidates for crystal packing.     

纳米氧化铟粉体的形貌与结构研究

用湿化学法制备了纳米极氧化铟超细粉体。利用透射电子显微镜、图像分析仪研究了纳米氧化铟粉体的形貌、尺寸分布和结构特征。结果表明，氧化铟粉体呈方片状，尺寸在10-30nm，化学组分高纯，达到了纳米级粉末要求；粉体的尺寸均匀，但在不同条件下制得的粉体，其尺寸相差较大；制备得到的氧化铟超细粉体的结构为体心立方。     

Synthesis and characterization of chitosan/poly(acrylic acid) polyelectrolyte complex

Polyelectrolyte complex based on chitosan and acrylic acid monomer by photoinitiated free‐radical polymerization in the absence of crosslinker showed a large transition in swelling in response to changes in pH of surrounding medium. Their ability to swell arises from polyelectrolyte interactions and molecular structure of the complex. The main properties of interest that related to the molecular structure, swelling volumes, glass transition temperature, and elastic modulus of the complex were investigated. The effect of water content, the only variable in the sample component, played an important role in molecular structure of the complex and as a consequence, the extent of intermolecular linkage, especially amide bonds which in turn governed the degree of swelling of the polyelectrolyte complex in this study. The decreased degree of swelling and higher temperature shift of glass transition temperature was found with increased water content, whereas increased modulus of elasticity of dry complex was found in lower water content of synthesis component. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 1025–1035, 2002     

磁控溅射WO3薄膜特性研究

用磁控溅射法制成WO3薄膜,通过改变成膜的溅射参数来改变WO3薄膜的性能.利用XRD分析了样品的粒径大小,研究了成膜工艺参数对气敏元件性能的影响.结果表明,薄膜中WO3晶粒的平均尺寸为17 nm,该传感器对NOx气体有非常好的灵敏度和选择性,对体积分数为1×10-5的NOx气体灵敏度高于50倍,而对其他干扰气体的灵敏度小于2倍.     

用扫描电镜判断火工药剂与金属桥丝长期接触的相容性

火工药剂与金属桥丝接触，在高温、高湿条件下贮存一定时间后两者是否相容，用电镜观察其金属表面的腐蚀形态（面积、深浅），以此来判断金属桥丝与火工药剂的相容性。     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².