金刚石镶嵌非晶碳膜表面微尖对场致发射的增强作用

用微波等离子体化学气相沉积设备,在金属钼衬底上沉积出了表面存在大量微尖的金刚石镶嵌非晶碳膜,分别用扫描电子显微镜（ＳＥＭ）、金相显微镜和Ｘ射线衍射谱（ＸＲＤ）及Ｒａｍ ａｎ谱对样品进行了分析测试,并研究了各样品的场致电子发射特性。结果发现：在笔者的实验范围内,金刚石薄膜表面微尖对场致电子发射具有增强作用,且薄膜表面微尖数目越多,场发射电流密度和发射点密度越高,场发射的发射阈值越低。最后建立了一个二次场增强模型对实验结果进行了解释     

硫化锌薄膜的微结构剖析

用Ｘ射线衍射和Ｘ射线光电子能谱技术,对分舟热蒸发法研制的掺铒（Ｅｒ）硫化锌直流电致发光薄膜及硫化锌粉料进行剖析,获得薄膜表面及粉料的构态信息,讨论了影响微晶薄膜质量的主要因素。     

Probing the Effects of Nanoscale Architecture on the Mechanical Properties of Hexagonal Silica/Polymer Composite Thin Films

We examine the effects of controlling nanoscale architecture on the tensile properties of honeycomb‐structured silica/polymer composite films. The hexagonal films are produced using evaporation‐induced self‐assembly and uniaxially strained using a home‐built tensile testing apparatus. Significant differences in the yield strain, failure strain, and tensile moduli between the axes parallel and perpendicular to the film‐deposition direction are observed for the thinnest films examined and are attributed to anisotropy in the film nanostructure that is further characterized with transmission electron microscopy and atomic force microscopy. For properly oriented composites, these films have tensile moduli comparable to the Young's modulus of bulk silica but exhibit failure strains that are about an order of magnitude larger than those seen in typical bulk‐silica systems. The yielding and failure processes are explored using X‐ray diffraction and optical microscopy and are characterized by irreversible changes in the nanoscale architecture. We show that tuning the nanoscale architecture can provide control over the tensile properties of composites, allowing for materials with combinations of stiffness and elasticity unachievable in the analogous bulk systems.     

Gold‐Nanoparticle‐Doped TiO2 Semiconductor Thin Films: Optical Characterization

A simple procedure for creating titania sol–gel‐based semiconductor thin films is described. Gold nanoparticles are doped homogeneously into the precursor mixture and the particles are homogeneously distributed in the resultant films when prepared using spin‐coating. The effects of particle loading and annealing temperature on the optical properties of the resultant films are characterized. Ellipsometry, X‐ray diffraction, atomic force microscopy, and surface plasmon spectroscopy are used to monitor the crystallization and porosity changes during film synthesis.     

Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films

Recent increases in the demand for mobile devices have stimulated the development of nonvolatile memory devices with high performance. In this Communication, we describe the fabrication of low‐cost, high‐performance, digital nonvolatile memory devices based on semiconducting polymers, poly(o‐anthranilic acid) and poly(o‐anthranilic acid‐co‐aniline). These memory devices have ground‐breaking and novel current–voltage switching characteristics. The devices are switchable in a very low voltage range (which is much less than those of all other devices reported so far) with a very high ON/OFF current ratio (which is on the order of 10⁵). The low critical voltages have the advantage for nonvolatile memory device applications of low operation voltages and hence low power consumption. With this very low power consumption, the devices demonstrate in air ambient to have very stable ON‐ and OFF‐states without any degradation for a very long time (which has been confirmed up to one year so far) and to be repeatedly written, read and erased. Our study proposes that the ON/OFF switching of the devices is mainly governed by a filament mechanism. The high ON/OFF switching ratio and stability of these devices, as well as their repeatable writing, reading and erasing capability with low power consumption, opens up the possibility of the mass production of high performance digital nonvolatile polymer memory devices with low cost. Further, these devices promise to revolutionize microelectronics by providing extremely inexpensive, lightweight, and versatile components that can be printed onto plastics, glasses or metal foils.     

桌面云在中国移动人工座席中的应用

介绍了实现桌面云的应用虚拟化和桌面虚拟化2种技术架构,对应用虚拟化和桌面虚拟化技术进行了比较,分析了各自的优缺点及适用的范围。最后介绍了桌面云在中国移动业务支撑系统人工座席中的应用和推广价值。     

西藏查龙水电站混凝土面板施工

查龙水电站钢筋混凝土面板堆石坝由钢筋混凝土面板、趾板、防浪墙及各分缝止水系统及防渗帷幕等组成。本文系统地介绍了应用该部自行设计的无轨式滑模进行面板施工的经验，以及混凝土原材料、配合比、浇筑、保温、混凝土质量控制和面板坝的分缝止水系统等施工情况。实践证明，在高寒缺氧地区采用这一施工措施，混凝土面板施工质量优良。     

A Morphological Model for the Solvent‐Enhanced Conductivity of PEDOT:PSS Thin Films

The well‐known enhanced conductivity of poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) thin films that is obtained by addition of high‐boiling solvents like sorbitol to the aqueous dispersion used for film deposition is shown to be associated with a rearrangement of PEDOT‐rich clusters into elongated domains, as evidenced from STM and AFM. Consistently, temperature dependent conductivity measurements for sorbitol‐treated films reveal that charge transport occurs via quasi 1D variable range hopping (VRH), in contrast to 3D VRH for untreated PEDOT:PSS films. The typical hopping distance of 60–90 nm, extracted from the conductivity measurements is consistent with hopping between the 30–40 nm sized grains observed with scanning probe microscopy.     

TFT-LCD技术的研究进展与发展趋势

介绍了近年来世界ＴＦＴ ＬＣＤ技术的研究现状,论述了未来ＴＦＴ ＬＣＤ技术的发展趋势     

Characterisation of charge carrier transport in thin organic semiconductor layers by time-of-flight photocurrent measurements

The paper reviews recent advances in characterisation of charge carrier transport in organic semiconductor layers by time-of-flight photocurrent measurements, with the emphasis on the measurements of the samples with co-planar electrodes. These samples comprised an organic semiconductor layer whose thickness is on the order of a μm or less, and thus mimic the structures of organic thin film transistors. In the review we emphasise the importance of considering spatial variation of electric field in these, essentially two-dimensional structures, in interpretation of photocurrent transients. We review the experimental details of this type of measurements and give examples that demonstrate exceptional sensitivity of the method to minute concentration of electrically active defects in the organic semiconductors as well as the capability of probing charge transport along the channels of different mobility that reside in the same sample.