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141.
采用POLYVAR-MET型金相显微镜、带有GENESIS60S能谱仪的Sirion200场发射扫描电镜对经高温和低温退火处理的Al/Cu双金属复合界面组织进行观察分析,研究热处理工艺对界面组织及扩散层厚度的影响规律,并进一步通过冷轧实验研究扩散层厚度与界面结合强度的关系,获得综合满足材料结合强度和成型性能的热处理工艺。结果表明:高温退火处理的Al/Cu复合试样难以实现稳定的塑性成型,低温退火处理能使界面结合牢固,冷变形塑性好;Al/Cu双金属复合材料的界面扩散结合层厚度的最佳范围为1.2~3.5μm;最佳工艺为低温退火加热到300~350℃,保温45~60 min。 相似文献
142.
143.
Solder joints used in electronic applications undergo reflow operations. Such operations can affect the solderability, interface
intermetallic layer formation and the resultant solder joint microstructure. These in turn can affect the overall mechanical
behavior of such joints. In this study the effects of reflow on solderability and mechanical properties were studied. Nanoindentation
testing (NIT) was used to obtain mechanical properties from the non-reflow (as-melted) and multiple reflowed solder materials.
These studies were carried out with eutectic Sn-3.5Ag solders, with or without mechanically added Cu or Ag reinforcements,
using Cu substrates. Microstructural analysis was carried out on solder joints made with the same solders using copper substrate. 相似文献
144.
采用共线双脉冲激光诱导击穿光谱(Dual pulse laser induced
breakdown spectroscopy, DP-LIBS)技术分析铝合金中微量元素含量,详细研究了共线双脉冲光谱信号强度与
双脉冲间时间延迟的关系,最佳延时为8$\sim$9 $\mu$s。在该延时条件下,双脉冲光谱信号强度比单脉冲光谱
信号强度增强了10倍以上。分别采用双脉冲激光诱导击穿光谱和单脉冲激光诱导击穿光谱(Single-pulse laser
induced breakdown spectroscopy, SP-LIBS)技术,得到了以Cu I 324.75 nm, Cr I 425.43 nm 谱线为分析线
的定标曲线。与采用单脉冲激光诱导击穿光谱技术相比,铝合金中 Cu和 Cr的检测极限分别由单脉冲时的169.5
和94.5 $\mu$g/g降低至双脉冲时的21.46 和4.26 $\mu$g/g。 相似文献
145.
During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au
and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ3-AuZn4/γ-Au7Zn18 intermetallic double layer and ε-AgZn6 intermetallic scallops, respectively. The growth of γ3-AuZn4 is prompted by further aging at 100°C through the reaction of γ-Au7Zn18 with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu
pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However,
after aging at 150°C, a Ni4Zn21 intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C
and 150°C caused a γ-Cu5Zn8 intermetallic layer to appear between ε-AgZn6 intermetallics and the Cu pad. The scallop-shaped ε-AgZn6 intermetallics were found to detach from the γ-Cu5Zn8 layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn
solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and
2.9 N, respectively. 相似文献
146.
We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic
system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability
of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal
reliability could be main tained up to 450°C. The failure mechanism was attributable to the decomposition of the InGaP layer
and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the in cident optical
power was found for the resultant Au/Cu-metal-semiconductor-metalphotodetectors (MSM-PDs). According to the measured temporal
response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz. 相似文献
147.
The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated.
After reflow, scallop-shaped η-Cu6Sn5 and continuous planar η-(cu0.9Ni0.1)6Sn5 intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the
case of the Sn3Ag0.5Cu specimens, an additional ε-Cu3Sn intermetallic layer is formed at the interface between the η-Cu6Sn5 and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge
packages. In addition, the coarsening of Ag3Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher
ball shear strength for the specimens. 相似文献
148.
Park N. -J. Field D. P. Nowell M. M. Besser P. R. 《Journal of Electronic Materials》2005,34(12):1500-1508
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) films was investigated by
electron backscatter diffraction (EBSD). Analysis of films was performed both in situ using a heating stage, and by ex-situ
observation of microstructural evolution. It was noted that not only is the Cu film texture and grain size a function of film
thickness, but also that the fraction of twin boundaries present in the material is strongly dependent upon film thickness.
This is explained by means of a simple model that considers the energy of the system. Surface and interface energies, as well
as grain boundary energies for random high angle boundaries and for twin boundaries (both coherent and incoherent planes)
are used in the determination. The model was shown to accurately predict the twin boundary size in self-annealed films. This
type of analysis also results in a texture map similar to that presented by Thompson,12 but incorporates the development and effect of twin boundaries, so that additional texture components (in addition to 111
and 100 fibers) are included. 相似文献
149.
Martina Serafini Federica Mariani Andrea Fasolini Eleonora Tosi Brandi Erika Scavetta Francesco Basile Domenica Tonelli 《Advanced functional materials》2023,33(29):2300345
In this study, new nanostructured CuMgAl Layered Double Hydroxide (LDH) based materials are synthesized on a 4 cm2 sized carbonaceous gas diffusion membrane. By means of microscopic and spectroscopic techniques, the catalysts are thoroughly investigated, revealing the presence of several species within the same material. By a one-step, reproducible potentiodynamic deposition it is possible to obtain a composite with an intimate contact between a ternary CuMgAl LDH and Cu0/Cu2O species. The catalyst compositions are investigated by varying: the molar ratio between the total amount of bivalent cations and Al3+, the amount of loading, and the molar ratios among the three cations in the electrolyte. Each electrocatalyst has been evaluated based on the catalytic performances toward the electrochemical CO2 reduction to CH3COOH at −0.4 V versus reversible hydrogen electrode in liquid phase. The optimized catalyst, that is, CuMgAl 2:1:1 LDH exhibits a productivity of 2.0 mmolCH3COOH gcat−1 h−1. This result shows the beneficial effects of combining a material like the LDHs, alkaline in nature, and thus with a great affinity to CO2, with Cu0/Cu+ species, which couples the increase of carbon sources availability at the electrode with a redox mediator capable to convert CO2 into a C2 product. 相似文献
150.
In flip chip technology, Al/Ni(V)/Cu under-bump metallization (UBM) is currently applicable for Pb-free solder, and Sn−Ag−Cu
solder is a promising candidate to replace the conventional Sn−Pb solder. In this study, Sn-3.0Ag-(0.5 or 1.5)Cu solder bumps
with Al/Ni(V)/Cu UBM after assembly and aging at 150°C were employed to investigate the elemental redistribution, and reaction
mechanism between solders and UBMs. During assembly, the Cu layer in the Sn-3.0Ag-0.5Cu joint was completely dissolved into
solders, while Ni(V) layer was dissolved and reacted with solders to form (Cu1−y,Niy)6Sn5 intermetallic compound (IMC). The (Cu1−y,Niy)6Sn5 IMC gradually grew with the rate constant of 4.63 × 10−8 cm/sec0.5 before 500 h aging had passed. After 500 h aging, the (Cu1−y,Niy)6Sn5 IMC dissolved with aging time. In contrast, for the Sn-3.0Ag-1.5Cu joint, only fractions of Cu layer were dissolved during
assembly, and the remaining Cu layer reacted with solders to form Cu6Sn5 IMC. It was revealed that Ni in the Ni(V) layer was incorporated into the Cu6Sn5 IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. During the period of 2,000 h aging, the growth
rate constant of (Cu1−y,Niy)6Sn5 IMC was down to 1.74 × 10−8 cm/sec0.5 in, the Sn-3.0Ag-1.5Cu joints. On the basis of metallurgical interaction, IMC morphology evolution, growth behavior of IMC,
and Sn−Ag−Cu ternary isotherm, the interfacial reaction mechanism between Sn-3.0Ag-(0.5 or 1.5)Cu solder bump and Al/Ni(V)/Cu
UBM was discussed and proposed. 相似文献