铜冶炼脱硒渣浮选尾矿中铅的浸出研究

每年因铜冶炼会产生非常多的脱硒渣浮选尾矿,其中含铅量很高,铅是有毒性金属,若直接作为废渣处理不仅污染环境也是对资源的一种浪费。本研究以云南某企业的脱硒渣浮选尾矿为原料,利用湿法冶金的原理进行浸出实验,使矿料中的铅得到合理的回收利用。研究了在矿浆中加入不同浓度的NaOH、以及改变实验温度、固液比和反应时间等因素对铅浸出效果的影响;同时探究了C还原预处理对铅浸出效果的影响。实验结果表明：通过C还原预处理之后的矿料的铅浸出率有明显的提高,碳还原预处理时的最佳条件为：焙烧温度550℃、焙烧时间6h、碳粉与物料的比例为5:100;浸出实验的最佳条件为：浸出温度为90℃、固液比为1:10、NaOH浓度为180g/L、反应时间为1h。在此条件下矿料的浸出效果最好,最高浸出率为95.8%。     

硫化锰对钢中Sb析出行为的影响

研究了钢中不同夹杂物对Sb的析出和高温氧化过程中富集行为的影响.Fe-1.5%Sb合金1100℃水冷试样中Sb在钢中主要析出位置是晶界.与单一的氧化物夹杂相比,硫化锰是更为有效的Sb异质形核核心,且Sb析出相成分组成接近于FeSb相.实验结果与二维错配度理论计算结果相一致.通过降低氧含量,钢中加入Ti变质硫化锰夹杂等方式,增加了MnS数量,使得更多的Sb在夹杂物上析出,从而减少钢中Sb的偏析和固溶量,改变Sb在钢中的析出位置.     

火法炼银产锑烟尘的湿法处理

绍了用湿法处理火法炼银产锑烟尘的新方法．该方法流程简单，金属Sb和Ag回收率高，经济效益显著。     

Low-temperature processing of antimony-implanted silicon

It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square) following low-temperature processing. Thus, annealing at 650°C produces the best results for antimony, whereas for arsenic, it is necessary to anneal at temperatures above 1000°C to get optimum results. Silicon was implanted with antimony at 12 keV and 40 keV and doses of 8.5×10¹⁴ cm⁻² and 4×10¹⁴ cm⁻², respectively, and arsenic at equivalent energies and doses. The electrical data from both implants are compared in order to identify the process conditions require to obtain optimum results. It is demonstrated that annealing below 800°C produces electrical profiles with no measurable diffusion of the antimony, but higher temperature anneals produce significant diffusional broadening.     

一种加锑减锡的铜基减摩材料的研制

在6－6－3青铜基含油轴承的基础上，进行了减锡加锑的试验，研制出了符合ZBW90002—88要求性能以锑部分代替锡的新合金，为节约锡资源、开辟锑的应用领域指出了一条新途径。     

微量元素铋,锑对大断面球铁件石墨形态的影响

本实验使用光学显微镜和分析电检查了石墨形态。实验结果表明，在含稀土的球铁中加入铋，锑可以使石墨政治协商会议数量显著增加，并使石墨球更加细小、圆整、消除了大断面球铁中的畸变石墨。另外，检查结果发现，石墨核心主要是由稀土与铋、锑、铝等元素组成的复杂化合物。因此，可以认为导致大断面球铁石墨畸变的根本原因是缺乏足够的稳定结晶核心。     

氢化物发生-电感耦合等离子体原子发射光谱法测定钼铁中砷锡锑铋

钼铁作为冶炼过程中钼元素的加入剂,为保证冶炼质量,需对砷、锡、锑、铋含量进行严格控制,采用国标方法或原子荧光光谱法,只能单个元素分别检测,分析速度慢,周期长。实验通过氢化物发生法使 砷、锡、锑、铋在0.264mol/L硼氢化钠-40%盐酸的酸还原体系下还原为挥发性共价氢化物,然后借助载气流将其导入电感耦合等离子体原子发射光谱仪中进行测量,从而建立了氢化物发生-电感耦合等离子体原子发射光谱法(ICP-AES)测定钼铁中砷、锡、锑、铋的方法。确定各元素的分析谱线为As 193.759nm、Sn 189.989nm、Sb 217.581nm、Bi 223.061nm;为了消除基体效应的影响,采用基体匹配法配制标准溶液系列绘制校准曲线,各元素的校准曲线线性相关系数均不小于0.999;砷、锡、锑、铋的检出限分别为0.0003%、0.0009%、0.0009%、0.0012%。方法应用于钼铁试样中砷、锡、锑、铋的测定,结果的相对标准偏差(RSD,n=6)为3.1%~4.8%;各元素加标回收率为92%~110%。     

Growth and characterization of CuSbS2 crystals

The liquidus curves in the Cu-Sb-S system near CuSbS₂ composition and between CuSbS₂ and Sb₂S₃ were determined by cooling arrests of seeded melts. CuSbS₂ melts congruently at 552.25 ± 0.14°C and a eutectic occurs between CuSbS₂ and Sb₂S₃ at 490 ± 5°C and 0.72 ± 0.05 mole fraction Sb₂S₃. No additional phases appear on the liquidus surface in this portion of the Cu-Sb-S system. Crystals of CuSbS₂ were grown from the stoichiometric composition using the Bridgman Stockbarger method. At room temperature, the band gap of CuSbS₂ is 0.28 eV; however below 80K, a drop in resistivity suggests the appearance of a new phase. Measurements of photo current suggest that the band gap of the low temperature phase is greater than 0.58 eV.     

Microstructure and Crystal Structure in TAGS Compositions

GeTe, a small bandgap semiconductor that has native p-type defects due to Ge vacancies, is an important constituent in the thermoelectric material known as TAGS. TAGS is an acronym for alloys of GeTe with AgSbTe₂, and compositions are normally designated as TAGS-x, where x is the fraction of GeTe. TAGS-85 is the most important with regard to applications, and there is also commercial interest in TAGS-80. The crystal structure of GeTe_1+δ has a composition-dependent phase transformation at a temperature ranging from 430°C (δ = 0) to ~400°C (δ = 0.02). The high-temperature form is cubic. The low-temperature form is rhombohedral for δ < 0.01, as is the case for good thermoelectric performance. Addition of AgSbTe₂ shifts the phase transformation to lower temperatures, and one of the goals of this work is a systematic study of the dependence of transformation temperature on the parameter x. We present results on phase transformations and associated instabilities in TAGS compositions in the range of 70 at.% to 85 at.% GeTe.     

Evaluation of 1/f Noise Characteristics for Si‐Based Infrared Detection Materials

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma‐enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma‐enhanced chemical vapor deposition (PECVD)‐deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.