Detailed Measurements of Nuclear Spin Polarizations in a Single InAlAs Quantum Dot Through Overhauser Shift of Photoluminescence

We investigated optical pumping of nuclear spin polarizations in a single self-assembled In_0.75Al_0.25As/Al_0.3Ga_0.7As quantum dot. The nuclear spin polarization exhibits the abrupt jump and hysteresis in the excitation power dependence at a particular excitation polarization. Measurement of circular polarization rate of the photoluminescence reveals that the abrupt change of the nuclear spin polarization is created mainly by the spin flip-flop process between nuclei and an electron of a positive charged exciton in this single quantum dot. Model calculation explains well the experimentally observed bistable behavior in InAlAs quantum dot. By using this abrupt change, the sign and magnitude of electron and hole g-factors in z-direction are verified.      

量子阱红外探测器能带结构的计算

利用电子波在阱与垒的界面上的反射及干涉效应，计算了量子阱红外探测器(QWIP)的能带结构，并对其适用性进行了分析和讨论。通过与K-P模型比较发现，本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下，用两种方法计算得到的AlGaAs／GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明，在较宽的范围内，本方法对QWIP能带结构的计算是适用且简便的。     

Deep‐UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self‐Assembled Monolayers

The 193 nm photochemistry of (aminoethylaminomethyl)phenethylsiloxane (PEDA) self‐assembled monolayers (SAMs) under ambient conditions is described. The primary photodegradation pathways at low exposure doses (< 100 mJ cm^–2) are benzylic C–N bond cleavage (ca. 68 %), with oxidation of the benzyl C to the aldehyde, and Si–C bond cleavage (ca. 32 %). Amine‐containing photoproducts released from the SAM during exposure remain physisorbed on the surface, where they undergo secondary photolysis leading to their complete degradation and removal after ca. 1200 mJ cm^–2. NaCl(aq) post‐exposure rinsing removes the physisorbed materials, showing that degradation of the original PEDA species (leaving Si–OH) is substantially complete after ca. 450 mJ cm^–2. Consequently, patterned, rinsed PEDA SAMs function as efficient templates for fabrication of high‐resolution, negative‐tone, electroless metal and DNA features with good selectivity at low dose (i.e., ca. 400 mJ cm^–2) via materials grafting to the intact amines remaining in the unirradiated PEDA SAM regions.     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga _x In_1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

超微粒乳剂的制备及量子尺寸效应的研究

本文制备了四种不同粒度的超微粒AgBr照相乳剂,用X射线衍射技术对其粒子的大小进行了测定;观察到乳剂的紫外吸收峰随晶体颗粒的减小表现出逐渐蓝移;本文提出晶体表面的悬键的存在使得纳米晶体的平均键能升高,并对纳米AgBr乳剂的量子尺寸效应进行了解释。     

In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究

对Ｉｎ（０．２）Ｇａ（０．８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究．对ＰＲ结果的线形拟合指认了应变多量子阱中子能级的跃迁，并与理论计算结果作了比较．实验对比确认ＰＲ中１１Ｈ、１３Ｈ等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质．而１１Ｌ、３１Ｈ、２２Ｈ等跃迁结构为阶间耦合态，对这些隧穿耦合的低场调制产生三阶微商特性．     

激光器绝热啁啾对光纤通信系统传输特性的影响

通过理论分析、实验和计算机模拟得到：进行直接强度调制时，体块型DFB激光器的总微分量子效率（与多量子阱DFB激光器相比）过低，从而导致其绝热啁啾占激光器啁啾的主要部分；用于无再生中继距离较大的强度调制／直接检测（IM／DD）光纤通信系统时，色散效应将导致信号脉冲上升沿压缩，使系统误码率增加。据此建议：在无再生中继距离大于100～120km的常规单模光纤IM／DD系统中，应采用多量子阱激光器。     

半导体量子点自组织生长的计算机模拟研究

采用平均场模型和非平均场模型对半导体量子点的自组织生长过程进行了计算机模拟研究。结果表明两种模型给出了相似的量子点的大小分布,但在平均尺寸、数量以及覆盖面积随时间的变化上存在着差别,针对这些差别给出了解释。