用于NoC映射的EDA工具设计

片上网络（NoC）作为解决片上系统（SoC）复杂通信问题的新的范例,受到了工业界和学术界的广泛重视。为了保证实时任务在片上网络上的高效运行,从任务到网络拓扑的映射问题成为NoC研究中的关键问题之一。为了得到各种条件下的不同映射结果和性能曲线,本文设计了一种通用的NoC映射EDA工具。该工具基于Matlab的GUI设计方法,具有界面友好、可重配置性、运行速度快、自动导出并存储仿真结果等特点。     

基于谐振原理的RF MEMS滤波器的研制

采用与IC工艺兼容的硅表面MEMS加工技术,以碳化硅材料作为结构材料,研制出一种新型的基于谐振原理工作的RF MEMS滤波器。详细介绍了器件的工作原理、制备方法、测试技术和结果,并对测试结果做出分析。该RF MEMS滤波器由弹性耦合梁连接两个结构尺寸和谐振频率完全相同的MEMS双端固支梁谐振器构成,MEMS谐振器的结构决定了滤波器的中心频率,弹性耦合梁的刚度决定了滤波器的带宽。在大气环境下测试器件的频响特性,得到中心工作频率为41.5MHz,带宽为3.5MHz,品质因数Q为11.8。     

The Effect of Ketone Defects on the Charge Transport and Charge Recombination in Polyfluorenes

The effect of on‐chain ketone defects on the charge transport of the polyfluorene derivative poly(9,9‐dioctylfluorene) (PFO) is investigated. Using MoO₃ as ohmic hole contact, the hole transport in a pristine PFO diode is observed to be limited by space‐charge, whereas fluorenone contaminated PFO (PFO‐F) is shown to be trap limited by the occurrence of an exponential trap distribution with a trap depth of 0.18 eV. The electron transport in PFO is also observed to be trap limited, but in order to describe the electron transport of PFO‐F, an additional trap level with a depth of 0.46 eV must be introduced. The obtained energy levels of the fluorenone trapping sites are in close agreement with cyclic voltammetry (CV) measurements reported in literature. As a result, the fluorenone defects are shown to simultaneously act as hole‐ and electron trap. Moreover, through ideality factor measurements, the green emission associated with these defects is observed to originate from trap‐assisted recombination.     

Four-point probe characterization of 4H silicon carbide

We report on four-point probe measurements on SiC wafers as such measurements give erratic data. Current-voltage measurements on n-type SiC wafers doped to 3 × 10¹⁸ cm⁻³ are non-linear and single probe I-V measurements are symmetrical for positive and negative voltages. For comparison, similar measurements of p-type Si doped to 5 × 10¹⁴ cm⁻³ gave linear I-V, well-defined sheet resistance and the single probe I-V curves were asymmetrical indicating typical Schottky diode behavior. We believe that the reason for the non-linearity in four-point probe measurements on SiC is the high contact resistance. Calculations predict the contact resistance of SiC to be approximately 10¹² Ω which is of the order of the input resistance of the voltmeter in our four-point probe measurements. There was almost no change in two-probe I-V curves when the spacing between the probes was changed from 1 mm to 2 cm, further supporting the idea that the I-V characteristics are dominated by the contact resistance.     

碳化硼厚板的激光切割工艺及其机制

介绍了碳化硼陶瓷加工中存在的主要问题,将激光技术应用于加工碳化硼陶瓷上,研究出一种新型加工方法,设计出两种有效的激光切割方法并对碳化硼陶瓷进行切割。在实验基础上分析了激光加工参数对加工的影响,采用扫描电镜(SEM)对各种激光切割工艺的断口进行分析和讨论,提出激光加工碳化硼陶瓷的自行断裂机制。实验结果表明,在特定的功率下激光能够用来加工碳化硼陶瓷厚板。对于厚度为5.5 mm碳化硼陶瓷板,Nd∶YAG激光平均功率为130 W时,激光束沿同一位置重复走刀两次即可切断,最高切割速度可达到120 mm/min,可以做到无微裂纹切割。     

Electro-chemical mechanical polishing of silicon carbide

In an effort to improve the silicon carbide (SiC) substrate surface, a new electro-chemical mechanical polishing (ECMP) technique was developed. This work focused on the Si-terminated 4H-SiC (0001) substrates cut 8° off-axis toward 〈1120〉. Hydrogen peroxide (H₂O₂) and potassium nitrate (KNO₃) were used as the electrolytes while using colloidal silica slurry as the polishing medium for removal of the oxide. The current density during the polishing was varied from 10 μA/cm² to over 20 mA/cm². Even though a high polishing rate can be achieved using high current density, the oxidation rate and the oxide removal rate need to be properly balanced to get a smooth surface after polishing. A two-step ECMP process was developed, which allows us to separately control the anodic oxidation and removal of formed oxide. The optimum surface can be achieved by properly controlling the anodic oxidation current as well as the polishing rate. At higher current flow (>20 mA/cm²), the final surface was rough, whereas a smoother surface was obtained when the current density was in the vicinity of 1 mA/cm². The surface morphology of the as-received wafer, fine diamond slurry (0.1 μm) polished wafer, and EMCP polished wafer were studied by high-resolution atomic force microscopy (AFM).     

压接连接工艺技术

文章通过压接连接工艺技术与锡焊工艺技术进行性能比较,提出压接连接工艺技术的优越性。并规定了其工艺操作的技术要求、性能要求和质量保证要求。     

SPWM变频器FR-A540在数控机床上的应用

本文从SPWM变频器结构原理,FR-A540变频器,FR-A540变频器在数控机床的应用三个方面介绍了PWM变频器的结构、工作原理;FR-A540变频器的性能、接线端子;FR-A540变频器在数控机床的应用;来供广大电气同行参考使用。     

运用英语流程图诊断数控机床故障问题

英语已成为数控专业高技能人才的基本素质要求之一,而诊断数控机床的故障问题是数控专业学生常见的工作任务,尝试基于“工学一体化”教学模式,以期为培养数控专业学生英语运用能力提供一些参考。     

碳化硅单晶切割技术研究

碳化硅单晶材料是第三代宽禁带半导体材料的代表,对电子产业的发展起到强有力的支撑。晶片加工技术是器件生产的重要基础和基本保证,任何具有优异特性的材料只有在成功有效的加工技术下才能发挥实际效能。本文介绍了切割工艺,通过工艺实验及对实验结果的分析,确定了切割工艺参数。