高流速双室床节水效果评价

高流速双室床(HDCB)是我国自主开发的一项水处理新技术。陕西某热电厂1年多的运行结果表明,其自用水率仅为3.2%,远低于反渗透(33%)及其他离子交换技术(10%)。HDCB自用水率低是由其结构及运行特性决定的,它具有周期制水量大,再生步骤少,再生过程用水量少,大反洗(清洗)次数少等特性,是目前化学水处理技术中节水效果最好的一种技术。     

Cu的清洁生产

简要介绍Cu的湿法冶金新技术,即Cu的浸出及Cu的萃取清洁生产新工艺.该技术近几年得到了迅猛的发展,它实现了Cu冶金的清洁生产,有利于环境保护,实现了社会效益和环境效益的统一.     

水平连铸引拉铸紫铜工艺的初探

探讨水平连铸拉铸紫铜熔炼、铸造的工艺特点，分析拉铸工艺参数对铸坯质量的影响．     

诺砂的特性及综合利用

在研究诺砂特性的基础上论述了诺砂综合利用的各种途径，给出了实际利用中应注意的问题．     

硫化铜精矿焙烧的非等温动力学研究

采用DTA，TG结合X-射线衍射分析，对硫化铜精矿的焙烧的动力学进行了研究．发现硫化铜精矿焙烧可以分成两个阶段．在第一个阶段(673～857K)，铜的硫化物被氧化成硫酸盐；在第三个阶段(857～1073K)，生成的硫酸盐将分解为氧化物．其两个阶段都受界面化学反应所控制，表观活化能分别为159．5kJ／mol和242．2H／mol．     

Numerical Modeling of Grain Boundary Effects in the Diffusional Creep of Copper Interconnect Lines

We propose a numerical simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in processing stage. The mass flow problem is coupled to the stress analysis through vacancy flux and equilibrium vacancy concentration. The technique is implemented in a software package that seamlessly integrates the problem-oriented code with commercially available finite element program MSC.Marc. It is utilized to model the Coble creep phenomenon by introducing the nanoscale grain boundary region having the thickness on the order of several layers of atoms. As an illustration, the two-dimensional problem of stress relaxation in a single grain subjected to prescribed displacements and tractions is examined.     

全钒液流电池隔膜在钒溶液中的性能

考察了Nafion、日-160、日-80、FYM(日本产Nafion膜)和均相膜5种离子交换膜的两个关键性能(渗透性和面电阻)及其影响因素,对均相膜的化学稳定性进行了初步研究,并对两种膜进行了改性。实验发现:均相膜的钒扩散系数最小,但面电阻较大,化学稳定性不好;用二乙烯苯(DVB)对均相膜改性,综合性能较好;减小电场可降低钒离子扩散,提高钒溶液中氢离子浓度可减小面电阻。     

浅议如何提高氧化铜矿硫化浮选效果的几个问题

阐述了氧化铜矿硫化浮选几个问题。讨论了氧化铜矿硫化浮选中工业矿物，硫化剂。捕收剂应用，以及矿泥影响等问题。     

ISA法铜电解槽槽面水平误差的控制

本文介绍了通过采用找平装置来控制ISA法铜电解槽槽面水平误差的方法,通过现场测量及工艺操作证明是行之有效的。     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.