激光能量主动控制高超声速进气道研究现状

以注入激光能量的方式对高超声速进气道进行主动流动控制是提高超燃冲压发动机性能的一种重要方法。回顾了国际学者针对斜激波相互作用、Edney IV型激波相互作用和来流捕获这3项内容的控制方法和结果,为国内主动控制高超声速流场的研究提供了有益参考。     

真空电弧镀膜中金属液滴的热过程研究

本文建立了真空电弧镀膜中液滴热过程的理论模型，求解了沉积ＴｉＮ膜过程中液滴的温度与粒径变化。计算表明，液滴在飞行过程中温度和粒径不断减小；粒径较小的液滴温度降低较大，甚至可能发生凝固。计算实例能较好解释早期ＴｉＮ膜的电镜分析结果，揭示液滴在薄膜中引起两种不同微孔的机理。     

引风机内颗粒沉积的数值模拟

以重整化群k-ε 模型为基础,利用计算流体力学（computation fluid dynanics,CFD）对离心式引风机的内部流场进行数值模拟。采用拉格朗日颗粒轨道模型,得到固体颗粒在引风机内的运行轨迹;加入吹灰气流,通过数值模拟验证其减少颗粒沉积的可行性。     

超声振动辅助等离子沉积成形的研究

介绍了等离子沉积成形的原理、应用及其存在的优缺点,从超声原理出发介绍了超声振动对等离子沉积过程中晶粒及组织的影响,并设计了超声振动辅助等离子沉积成形的实验装置,对实验过程中以及该实验可能涉及的问题进行了探讨.     

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm^?1) and Raman (1117 cm^?1) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma‐enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as‐deposited films. The high degree of structural retention in the as‐deposited film allows for the beneficial formation of intrinsically porous silsesquioxane cages upon annealing in air. Complete oxidation of the silicon creates ‘Q’ groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as‐deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade‐off between improved mechanical properties and higher dielectric constants. Films annealed at 410 °C have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent‐less and low‐energy nature of iCVD make it attractive from an environmental safety and health perspective.     

电视、激光、中波红外多波段增透膜研究

针对多光谱成像中存在的多光谱共光路问题,在ZnSe基底上设计了三波段增透膜。通过选取合适的薄膜材料,利用TFCalc膜系设计软件对膜系进行设计与优化,使用热蒸发和离子源轰击结合的方式沉积膜层,采用分光光度计和傅里叶红外光谱仪测量光谱特性。通过设计粘结层与保护层,有效提高了膜层与基底之间的结合力以及膜层的强度。该膜层可以实现多光谱ZnSe基底在电视（500~800 nm）、1064 nm激光和中波红外（3.7~4.8 μm）三个波段高效增透,且具有良好的环境适应性。     

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

The precise control of the domain structure, layer thickness, and stacking order of graphene has attracted intense interest because of its great potential for nanoelectronics applications. Much effort has been devoted to synthesize semiconducting Bernal (AB)‐stacked bilayer graphene because of its tunable band structure and electronic properties that are unavailable to single‐layer graphene. However, fast growth of large‐scale bilayer graphene sheets with a high AB‐stacking ratio and high mobility on copper poses a tremendous challenge, which has to overcome the self‐limiting effect. This study reports a low‐cost but facile method to rapidly synthesize bilayer Bernal graphene by atmospheric pressure chemical vapor deposition using polystyrene as the feedstock. The bilayer graphene grains and continuous film obtained are of high quality and exhibit field‐effect hole mobilities as high as 5700 and 2200 cm² V^?1 s^?1 at room temperature, respectively. In addition, a synchronous growth mechanism of bilayer graphene is revealed by monitoring the growth process, resulting in a high surface coverage of nearly 100% for a near‐perfect AB‐stacking order. This new synthesis route is significant for industrial application of bilayer graphene and investigation of the growth mechanism of graphene by the chemical vapor deposition process.     

BeO瓷的金属化和封接

综述了氧化铍瓷的金属化及其封接技术,指出氧化铍瓷和Al2O3瓷在金属化工艺上的差异,论文最后汇集了国内外常用烧结金属粉末法15种配方和工艺参数,以资同行专家参考.     

Fabrication of Silicon Inverse Woodpile Photonic Crystals

Silicon inverse woodpile photonic crystals are fabricated for the first time. Our approach, which is based on direct laser writing of polymeric templates and a novel silicon single‐inversion procedure, leads to high‐quality structures with gap/midgap ratios of 14.2 %, centered at a wavelength of 2.5 μm. It is shown that gap/midgap ratios as large as 20.5 %, centered at 1.55 μm, may become possible in the future.