纳米非晶态Ni(OH)_2电极材料的稀土掺杂改性研究

为了提高镍基二次电池正极材料的电化学性能,采用微乳液快速冷冻沉淀法制备出稀土Ce掺杂纳米级非晶态氢氧化镍粉体材料.采用Raman,XRD,SEM和TEM对其结构形态进行了表征分析,采用交流阻抗谱(EIS)和充放电性能对其电化学性能进行了测试.结果发现,掺入适量的Ce可以进一步增强纳米非晶态氢氧化镍的无序性并且使颗粒细化,进而使其电化学反应的电荷转移电阻降低,电化学活性明显增强.样品作为MH-Ni电池正极材料以0.2 C充放电,终止电压为1.0 V,当掺杂Ce的质量分数为4%时,其放电比容量达到336.7 mAh/g,这明显高于晶态β-氢氧化镍电极材料289 mAh/g的理论容量,说明纳米非晶态氢氧化镍作为高活性电极材料具有很好的应用前景.     

Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%(30...     

Design of unidirectional emission silicon/Ⅲ-Ⅴ laser for on-chip interconnects

We propose a unidirectional emission silicon/Ⅲ-Ⅴ laser,which comprises an Ⅲ-Ⅴ quantum wells microdisk connected to an output waveguide and a silicon-on-insulator (SOI) waveguide.Characteristics of the ...     

微波治疗机（HYJ-Ⅲ）治疗非坏疽性糖尿病足90例疗效观察

目的：观察微波治疗机（HYJ-Ⅲ）治疗对非坏疽性糖尿病足其疗效及安全性。方法：选择非坏疽性糖尿病足患者90例,按住院号末位单双号分组的原则分为试验组（45例）和对照组（45例）,对照组采用常规治疗,试验组采用常规治疗加微波治疗机（HYJ-Ⅲ）治疗,动态观察及比较糖尿病足的愈合效果。结果：两组比较,试验组显著优于对照组（P〈0．05）,两组均未发现明显不良反应。结论：微波治疗机（HYJ-Ⅲ）能促进糖尿病足患者创面的愈合,缩短住院时间,方便、舒适,无不良反应。     

Facilitation of Gene Transfection and Cell Adhesion by Gelatin‐Functionalized PCL Film Surfaces

Efficient local gene transfection on a tissue scaffold is of crucial importance in facilitating tissue repair and regeneration. In this work, the gelatin‐functionalized polycaprolactone (PCL) film surfaces are prepared via surface‐initiated atom transfer radical polymerization of glycidyl methacrylate. The resultant covalent attachment of gelatin could enhance the cell‐adhesion and local gene transfection properties. The gelatin‐functionalized PCL film surfaces exhibit excellent cell‐adhesion ability to both adherent and suspension cells. The attached adherent cells demonstrate the characteristic elongated morphologies with good spreading capability, while the attached suspension cells can maintain the original status of the round morphologies without spreading. More importantly, the gelatin coupled on the PCL surface could be used to absorb the cationic vector/plasmid deoxyribonucleic acid (pDNA) complexes via electrostatic interaction. The local gene transfection property on the immobilized cells is dependent on both the density of the immobilized cells and the loading types of pDNA complexes. The transfection efficiency of different assemble methods of pDNA complex was compared. With the pre‐ and post‐loading sandwich‐like gene transfection, the gelatin‐functionalized PCL film surface can substantially enhance the transfection properties to different cell lines. The present study is very useful to spatially control local gene delivery within PCL‐based tissue scaffolds.     

基于蒙特卡罗分析Ⅲ族氮化物输运特性的研究

利用Silvaco软件中的蒙特卡罗算法,详细研究了Ⅲ-氮化物的速-场特性和低场迁移率特性,数值计算了掺杂浓度和晶格温度对-氮化物输运特性的影响。结果表明,在忽略缺陷和表面粗糙度散射的条件下,Ⅲ-氮化物的强场输运特性取决于材料的谷间散射,且当掺杂浓度小于1e17cm-3时,杂质对速-场特性的影响可忽略不计;而低场迁移率特性则主要受晶格振动散射和电离杂质散射的影响。此外,根据Ⅲ-氮化物速-场特性的模拟结果,对"速度过冲"效应提出一种新的解释。     

Ce—Si多层膜中铈硅化物的形成

超高真空条件下,在Si(100)衬底上相间蒸镀稀土金属铈(200埃)和硅(200埃)薄膜,形成多层膜结构,并对其进行恒温炉退火和红外快速退火处理。然后利用AES、RBS、XRD和TEM等分析技术对所得各样品进行分析,发现Ce-Si多层膜在150℃的低温下经2小时退火即可发生反应,形成混合层。随着退火温度从150℃上升,CeSi_2逐步形成,并在300—400℃之间完全反应。经RBS确定的化学配比为CeSi_(～1.73)。在150—400℃ CeSi,的形成过程中,选区衍射分析发现,在低温时薄膜中有些区域就存在小晶粒,但直到900℃10秒退火后,薄膜也只是多晶,而并未发现单晶外延迹象。     

稀氮 Ⅲ-Ⅴ族InAsN和InSbN中长波红外光电材料与器件

将少量氮原子加入Ⅲ—Ⅴ族半导体后可引起能带减小,因此这种方法可以用来实现能带结构裁剪。这种新型稀氮化物显示出了奇特的物理性质,并且具有应用于新型光电器件的潜力。特别是,备受关注的稀氮InAsN和InSbN在中长波红外光电材料上具有巨大的应用价值,并将在中长波红外器件应用领域发挥重要的作用。     

一种应用于硅基OLED微显示驱动芯片的负压DC-DC变换器的设计

设计了一款应用于硅基OLED微显示驱动芯片的Cuk型DC-DC变换器,用于给硅基OLED的公共阴极提供负电压,输出电压范围为0~-4V,可以实现动态可调。Cuk变换器采用单周期和III型补偿的混合控制方式,使电路获得了良好的抗输入扰动性和负载调整率。该变换器使用0.35μm CMOS工艺模型进行设计,工作在2 MHz开关频率。仿真结果显示,在150mA负载跳变时,瞬态恢复时间为24μs,过冲电压为33.47 mV,同时负载调整率为0.003 mV/mA,输出电压的纹波小于5mV。     

氦氖激光联合左氧氟沙星针及护理治疗脑卒中并发Ⅲ-Ⅳ期压疮的效果评价

探讨氦氖激光照射联合左氧氟沙星针及护理治疗脑卒中并发Ⅲ-Ⅳ期压疮的疗效。将48例院外带入压疮的脑卒中患者随机分成实验组和对照组,各24例。对照组实施神经内科护理常规,并清洁创面后用左氧氟沙星针纱布湿敷;实验组清创后每天用氦氖激光照射压疮表面15至20 min,再用左氧氟沙星针纱布湿敷,并给予有针对性的护理干预。治疗4周后观察压疮愈合情况。对照组有效率为69.70%,实验组有效率为90.91%。两组差异比较(P0.005),有统计学意义。氦氖激光联合左氧氟沙星针治疗护理更有利于Ⅲ-Ⅳ期压疮的肉芽生长和上皮爬行,促进压疮创面愈合,缩短了压疮愈合时间。