Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors

Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V_GS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.     

Small‐signal and noise modeling of class of HEMTs using knowledge‐based artificial neural networks

In this article, the neural network approach is exploited for development of bias‐dependent small‐signal and noise models of a class of microwave field effect transistor (FETs) made in the same technology but differing in the gate width. The prior knowledge neural approach is applied. Introducing gate width at the input of proposed neural networks, as well as the S/noise parameters of a device that belongs to the same class as the modeled device representing the prior knowledge, leads to very accurate scattering and noise parameters' modeling, as exemplified by modeling of class of pseudomorphic high electron mobility transistor (pHEMT) devices. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.     

直流偏磁对飞来峡电厂1~#主变的影响分析

根据飞来峡电厂1#主变受直流偏磁的影响状况,分析问题存在的原因,提出消除直流偏磁使变压器安全运行应采取的具体措施,从而很好地改善该站主变的直流问题。     

脑MR图像分割和偏移场矫正的耦合水平集模型

脑核磁共振(MR)图像因需要偏移场矫正,传统分割方法很难获得准确的分割结果。针对这一问题,首先构造一组基函数拟合偏移场以保证偏移场的光滑特性,再将其融入到高斯概率密度函数中,结合统计分类准则建立脑MR图像的分割和偏移场矫正的能量方程,最后将该能量方程引入到三相位水平集的变分框架中得到脑MR图像的分割和偏移场矫正的耦合模型。实验表明该方法在得到准确的分割结果同时还可以得到较好的恢复结果。     

论绘画中的“视觉偏见”

当今,我们的视觉受到来自外在世界的各种影响,受到干扰后的视觉就变得不再纯粹,这使得作为视觉艺术的绘画失去了本应有的生命力。本文从视觉偏见出发来论述它产生的原因及打破视觉偏见的途径。     

双闭环真空硅微陀螺仪设计及测试性能分析

所设计的硅微陀螺仪工作在10 Pa,品质因素达到3000,采用CAN金属壳封装形式,测控线路采用闭环自激驱动,力反馈式闭环检测方式.驱动采用单边驱动单边检测,尽量使线路简化;检测采用双重分解和重构回路.测试结果表明:有用信号和正交信号实现很好的相位解耦,互不影响.在实现标度因素10 mY/(°)S-1的情况下,零偏稳定性已达到了60°/h;线性度已达到了400 ppm;带宽仿真达到150 Hz;这较以前设计的空气下闭驱开检方式下的硅微陀螺性能提高了近2个数量级.     

一种高增益的宽带低噪声放大器的设计

采用SANAN公司的0.25μm E-Mode pHEMT工艺,基于ADS仿真,设计了一款工作频率为2.0～4.2 GHz的两级级联的宽带LNA芯片。芯片采用电阻偏压的方式,实现了3.3 V单电源供电。同时,设计了一种改进型的RLC并联负反馈结构,实现了宽带匹配。仿真结果表明,该LNA在2.0～4.2 GHz频段内,最大增益为30.9 dB,增益平坦度为±0.6 dB左右,输入回波损耗小于-9 dB,输出回波损耗小于-12 dB;噪声系数为(1.2±0.14) dB;系统稳定性因子K在全频带内大于2.8;芯片面积为0.78 mm×2.2 mm。     

HVDC/GIC型直流偏磁的差异性分析

考虑到地磁感应电流(geomagnetically induced current, GIC)具有低频性,过去一直将其近似等效为高压直流输电(high voltage direct current, HVDC)诱发的不平衡电流进行研究。然而,与HVDC型直流偏磁相比,GIC型直流偏磁具有显著的随机性与时变性,因此简单地将两者完全等效处理并不合理,在特定场景下应加以区分。为此,首先,从理论上分析了两种类型直流偏磁在诱发原因及特点上的差异。其次,通过研究直流偏磁对变压器本体以及电流互感器的不利影响,进一步探究两种类型直流偏磁对电网一/二次设备的影响差异,为后续的偏磁治理提供有效参考。最后,基于PSCAD/EMTDC仿真平台搭建了等效仿真模型,并通过仿真验证了理论分析的正确性。