Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.     

Thermal Shock Behavior of Porous Silicon Carbide Ceramics

Using the water-quenching technique, the thermal shock behavior of porous silicon carbide (SiC) ceramics was evaluated as a function of quenching temperature, quenching cycles, and specimen thickness. It is shown that the residual strength of the quenched specimens decreases gradually with increases in the quenching temperature and specimen thickness. Moreover, it was found that the fracture strength of the quenched specimens was not affected by the increase of quenching cycles. This suggests a potential advantage of porous SiC ceramics for cyclic thermal-shock applications.     

Effect of carbide additions on grain growth in TiC−Ni cermets

The growth of carbide particles in TiC-XC-2 vol.% Ni and TiC-XC-30 vol.% Ni alloys, where X=Zr, Cr, W, Ta and Mo, was fitted to an equation of the form d³-d_o ³=Kt. The grain growth behavior during liquid phase sintering at 1673K decreased markedly with the addition of Mo₂C or WC, changed little for TaC, and increased with the addition of ZrC or Cr₃C₂. The grain contiguity decreased with increasing Ni content in the TiC−Mo₂C−Ni alloy and was greater in the alloys with smaller growth rate constant. Consequently, the effect of carbide addition on the grain growth of 2 vol.% Ni alloys was found to be similar to that of 30 vol.% Ni alloys. The grain growth mechanism could be explained by the effect of contiguous carbide grain boundaries in restricting the overall grain growth, as well as the area of the solid/liquid interfaces in the alloy by the usual solution/reprecipitation model.     

Effect of Processing Temperature on the Morphology of Silicon Carbide Whiskers

Two kinds of SiC whiskers were annealed at temperatures similar to those for the processing of ceramic matrix composites. The morphology and structure of the as-received and postannealed whiskers were investigated by SEM, TEM, and XRD, and the influence of processing temperature on the mechanical properties of ceramic matrix composites was discussed.     

控制W9Cr3Mo4V低倍碳化物剥落的工艺改进

针对W9Cr3M04V轧制成品材低倍碳化物剥落的形成原因分析，得出一次碳化物颗粒粗大、在1／4D至中心区域聚集是导致低倍热酸浸试验碳化物剥落的主因；由此进行冶炼过程中注速（锭形）、浇注温度选择对比工艺试验，得出在原有冶炼＋轧制的工艺基础上选用2．2t锭、降低浇注温度（1489℃）能有效改善一次碳化物颗粒大小和聚集程度，进而有效降低低倍碳化物剥落倾向。     

真空碳热还原法制备高密度碳化钒

研究了采用真空碳热还原法由三氧化二钒制备碳化钒，并研究了碳化钒产物密度随实验条件的变化规律。找到了用于强化碳化钒产物密度的添加剂，研究结果表明，反应温度，添加剂是影响碳化钒产物密度的主要因素。反应时间对产物密度也有一定影响。研究结果同时表明，含铁化合物能有效地提高产物密度。     

硬质合金与铁基复合材料热等静压扩散连接

以烧结结态硬质合金和粉末态铁基复合材料为连接对象，研究了两种材料的热等静压扩攻连接工艺，获得了直接连接接头和加镍作中间过渡层的间接连接接头，考察了接头的结合界面形貌，界面的元素扩散和界面结合强度。     

碳化硅加热元件的电性能和使用

本文介绍碳化硅加热元件的电特性、表面负荷以及工作气氛对它的影响，并对它设计和使用要点举例予以说明。     

The multi-structure of oxidized-reduced tungsten carbide surface(s)

The XPS of bulk tungsten carbide, partially oxidized WC surfaces at 373 and 573 K as well as tungsten trioxide have been reported. Bulk WC has been prepared from WO₃ as a starting material in a mixture of CH₄ (20%) and H₂ (80%) at 1150 K for 4 h, while partially oxidized WC surfaces were prepared by oxygen chemisorption on a clean WC surface at 200 K, then the temperatures were raised to 373 and 573 K respectively. The XPS of a freshly prepared WC reveals the presence of a small amount of WO₃ on the surface and a slightly higher concentration in the bulk. The oxygen-exposed fresh WC surfaces and surfaces treated at temperatures higher than 373 K show the presence of WO₃ in a considerable quantity depending on the length and the treatment temperature. Ar⁺ bombardment of this partially oxidized surface reduces WO₃ to WO₂ and W(0), while WC is partially reduced to W(0). Isomerization reactions of alkanes on oxygen-exposed WC surface occurs in reality on a composite surface structure containing WC, WO₃, WO₂ and elemental W(0).