In Situ Synthesis and Microstructures of Tungsten Carbide-Nanoparticle-Reinforced Silicon Nitride-Matrix Composites

A W₂C-nanoparticle-reinforced Si₃N₄-matrix composite was fabricated by sintering porous Si₃N₄ that had been infiltrated with a tungsten solution. During the sintering procedure, nanometer-sized W₂C particles grew in situ from the reaction between the tungsten and carbon sources considered to originate mainly from residual binder. The W₂C particles resided in the grain-boundary junctions of the Si₃N₄, had an average diameter of ∼60 nm, and were polyhedral in shape. Because the residual carbon, which normally would obstruct sintering, reacted with the tungsten to form W₂C particles in the composite, the sinterability of the Si₃N₄ was improved, and a W₂C–Si₃N₄ composite with almost full density was obtained. The flexural strength of the W₂C–Si₃N₄ composite was 1212 MPa, ∼34% higher than that of standard sintered Si₃N₄.     

烧结助剂对氮化硅陶瓷显微结构和性能的影响

氮化硅中氮原子和硅原子的自扩散系数很低，致密化所必需的扩散速度和烧结驱动力都很小，在烧结过程中需采用烧结助剂。烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。有效的烧结助剂不但可以改善氮化硅陶瓷的显微结构，而且可以提高氮化硅陶瓷的高温性能和抗氧化性能。     

Thermodynamic Analysis of Chemical Vapor Deposition of BN + AIN Composite Coatings

Thermodynamic calculations were performed using a modified solgasmix-pv computer program in order to study the feasibility of codepositing boron nitride (BN) plus aluminum nitride (AIN) by chemical vapor deposition. Reactants considered were AICl₃, BCl₃ or B₂H₆, NH₃, and H₂. Deposition diagrams were generated for the BCl₃-AICl₃-NH₃ system over a range of processing conditions such as temperature, total system pressure, and reagent concentrations. Codeposition of BN + AIN was predicted by the calculations for temperatures in the range of 900 to 1700 K and pressures of 10.13 to 101.3 kPa. The predicted deposition efficiency at equilibrium was much higher for BN than for AlN at most reagent compositions. The AlN deposition efficiency increased with decreasing temperature and decreasing BCl₃ content, with increasing NH₃ content, or with the addition of H₂. Aluminum chlorides were found to be the dominant gaseous species.     

Si3N4陶瓷材料的高温氧化理论及其抗氧化研究现状

从热力学、动力学和整体控速过程探讨了氮化硅陶瓷材料高温氧化理论和氧化性质，阐述了表面改性技术对氮化硅抗氧化性能的影响．并对表面改性提高氮化硅抗氧化性能进行了展望。     

PS协同Z型异质结2D/BiOI/g-C3N4 光催化降解四环素

以三聚氰胺为前驱体，采用简单的热聚合方法制备了超薄石墨相氮化碳（g-C3N4），并用原位沉积-沉淀法在g-C3N4表面生成碘氧化铋（BiOI），复合构筑不同BiOI质量占比的二维碘氧化铋/石墨相氮化碳（2D/BiOI/g-C3N4，BICN-x）Z型异质结用以协同过二硫酸盐（PS）。通过XRD、FTIR、SEM、HRTEM、BET、UV-vis DRS对光催化剂的结构、表面官能团、形貌特征、比表面积和光学性能进行表征分析。结果表明：BiOI与g-C3N4质量比为2∶1（BICN-3）时，通过密切的界面耦合，光生电子-空穴对分离效率较高，光生e-以更快的迁移速度到达结构表面，并且在LED照射60 min内，BICN-3与PS形成的催化体系（BICN-3/PS）去除了88.2%的四环素（TC，10mg/L），降解速率是单独BICN-3的3.82倍。     

半透明氮化硅陶瓷的放电等离子烧结制备及性能

用放电等离子烧结(spark plasma sintering,SPS)技术,以质量分数(下同)为9%氮化铝(A1N),3%氧化镁(MgO)为烧结助剂,在1850℃烧结5min,成功制备了半透明氮化硅(Si3N4)陶瓷.半透明Si3N4陶瓷在中红外波段表现出良好的透过率,最大透过率为66.4%.SPS的快速致密化过程保证了烧结体具有良好的晶体结构,有利于提高透过率.SPS快速的烧结过程和A1N和MgO的加入能够有效抑制烧结过程中Si3N4陶瓷由α相向β相的转变,是制备光学性能良好的Si3N4陶瓷的关键.报道了半透明Si3N4陶瓷的其他性能.光学性能与其他性能的结合,势必大大拓宽Si3N4陶瓷的应用领域.     

环保型催化材料氮化钼的合成与表征

采用溶胶-凝胶法制备了负载型氮化钼的前驱体,采用流化氮化新工艺制备了氮化钼。通过单因素和正交实验,确定了较优氮化条件:升温速率为1.2℃/min,H2∶N2=4.0∶1,空速70×103h-1,氮化终温为650℃,活性组分MoO3含量为10%。并采用BET、XRD、SEM等对制备的氮化钼及前驱体进行了表征。     

Zr掺杂g-C3N4光催化降解有机污染物

以盐酸胍为前驱体，硝酸锆为锆源，通过热聚合法制备了Zr掺杂的Zr/g-C3N4光催化剂。运用XRD、SEM、UV-Vis DRS、PL、XPS、BET等手段对催化剂的结构、形貌、光学性能进行了表征分析。结果表明：Zr掺杂改性的Zr/g-C3N4光催化剂拓宽了可见光的吸收，增大了比表面积，且降低了光生电子-空穴的复合率，具有较好的光催化活性。可见光照射下，在60 min内，5Zr/g-C3N4对罗丹明B（RhB）的光催化降解率达99.29%，光催化降解过程符合一级动力学方程，其速率常数k= 0.08647 min-1，是纯g-C3N4的8.3倍。捕获剂实验发现降解RhB的主要活性物种为超氧自由基，并推测了可能的反应机理。     

Electrochemical formation of AlN in molten LiCl-KCl-Li3N systems

Electrochemical formation of aluminum nitride was investigated in molten LiCl-KCl-Li₃N systems at 723 K. When Al was anodically polarized at 1.0 V (versus Li⁺/Li), oxidation of nitride ions proceeded to form adsorbed nitrogen atoms, which reacted with the surface to form AlN film. The obtained nitrided film had a thickness of sub-micron order. The obtained nitrided layer consisted of two regions; the outer layer involving AlN and aluminum oxynitride and the inner layer involving metallic Al and AlN. When Al electrode was anodically polarized at 2.0 V, anodic dissolution of Al electrode occurred to give aluminum ions, which reacted with nitride ions in the melt to produce AlN particles (1-5 μm of diameter) of wurtzite structure.     

粒子弥散强化氮化硅基陶瓷

运用晶界工程理论，选择能形成高耐炎度晶界相的Ｙ２Ｏ３和Ｌａ２Ｏ３双稀土氧化物为Ｓｉ３Ｎ４陶瓷烧结助剂，材料具有优异的高温强度。第二相碳化硅粒子的引入有效地改善了氮化陶瓷的显微结构和力学性能。以无压烧结工艺制备的高性能α／β－Ｓｉａｌｏｎ复相陶瘊等在实际应用中获得良好效果。