表面氧化层对TiMn1.25Cr0.25储氢合金活化性能的影响

通过TiMn1.25Cr0.25合金粉活化前在空气中暴露不同的时间,探讨了表面氧化层的形成对其活化性能的影响。活化测试结果表明：合金的活化难度随着合金在空气中暴露时间的延长而加大。俄歇电子能谱(AES)结果表明,在空气中暴露后的合金表面形成了一层大约6nm-10nm厚的表面氧化层,正是这层氧化层的形成加大了合金的活化难度。扫描电镜(SEM)结果表明合金的活化过程与合金的碎化有着密切的联系。     

Wear-resistance and anti-scuffing of multi-arc ion plating molybdenum films

The multi-arc ion plating technology was employed to prepare the molybdenum films with thickness of 3 μm on the AISI 1045 steel. The wear and scuffing tests were carried out on the ball-on-disc tester. AFM and SEM equipped with EDS were adopted to observe and analyze the morphologies and element compositions of surface,cross-section and worn scar of the Mo film. The phase structure was studied by XRD and the bonding strength between Mo film and substrate was measured by scratching tester. The tribological experiments show that the Mo film possesses a good wear-resistance and an excellent anti-scuffing property. The failure mechanism of Mo film under extreme condition is flaking off.     

Effect of theθ-α-Al2O3 transformation on the oxidation behavior ofβ-NiAl + Zr

Isothermal oxidation of NiAl + Zr has been performed over the temperature range of 800–1200°C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000° C due to the formation of -Al₂O₃ from -Al₂O₃. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a shortcircuit outward aluminum diffusion growth mechanism that has been documented in a number of¹⁸O tracer studies.     

Performance of positive and negative electrodes in amorphous manganese oxide supercapacitor

Using potassium permanganate and acetic manganese as the reactants, amorphous manganese oxide was prepared with mechanochemical method. XRD was used for microstructure characterization, while cyclic voltammetry and constant current charge-discharge were used for electrochemical performance testing. The positive electrode （PE） and negative electrode （NE） were investigated respectively in amorphous manganese oxide supercapacitor, aiming to find their different performances in charging-discharging. The results show that the crystalline structure is destroyed in both the PE and NE material during charge-discharge process. Thereinto, the NE suffers a bit more seriously. When cycling, the PE potential scope diminishes while the NE potential scope enlarges. The increased inner resistance makes the NE curves almost bended to be a right angle, but not the PE curves. The cell＇s equivalent series resistance （ESR） is more dependent on the NE, and the capacitance is mainly determined by the rapid descent of the NE potential range. The capacitances of the NE are highly rate-dependent, decreasing from 121.3 to 53.1 F/g, by 56.2%, over the range of 5-25 mV/s. However, the PE appears to be weakly dependent and its capacitance is only dropped by 22.1%.     

Semi-physical mean-value NOx model for diesel engine control

A semi-physical model has been developed to predict nitrogen oxide (NO_x) emissions produced by diesel engines. This model is suitable for online NO_x estimation and for model-based engine control. It is derived from a zero-dimensional thermodynamic model which was simplified by only retaining main phenomena contributing to NO_x formation. The crank angle evolution of the burned gas temperature, which has a strong impact on NO_x formation rate, is described by a semi-empirical model whose key variable is the maximum burned gas temperature. This variable presents a good correlation with the molar fraction of NO_x at the end of combustion and can be expressed as a function of the intake burned gas ratio and the start of combustion. The maximum burned gas temperature sub-model is then coupled to an averaged NO_x formation kinetic model (based on the Zeldovich mechanism) to form a mean-value model for NO_x computation. This latter model was validated using data sets recorded in two diesel engines for steady-state operating conditions as well as for several driving cycles including parametric variations of the engine calibration.     

Thin‐film transistor mobility limits considerations

The mobility limiting scattering mechanisms for amorphous semiconductors and polar polycrystalline semiconductors are studied in the context of developing new high‐performance thin‐film transistor (TFT) channel layer materials for large‐area electronics. A physics‐based model for carrier transport in an amorphous semiconductor is developed to estimate the mobility limits of amorphous semiconductor TFTs. The model involves band tail state trapping of a diffusive mobility. Simulation reveals a strong dependence on the band tail density of states. This consideration makes it difficult to realize a high‐performance p‐type oxide TFT. A polar crystalline semiconductor may offer a higher mobility but is fundamentally limited by polar optical phonon scattering. Any crystalline TFT channel layer for practical large‐area applications will not be a single crystal but polycrystalline, and therefore, grain size and grain boundary‐dependent scattering will further degrade the transport properties.     

Calculation of film stress from pitch measurements in LCD panel manufacturing

A method based on inverting a finite element model is presented for determining film stress from pitch changes before and after a film deposition step in liquid‐crystal display panel manufacturing. It differs from the conventional methods by making use of in‐plane deformation rather than out‐of‐plane measurements to calculate film stress. The resulting film stress is confounded with glass structural relaxation. Measurements of out‐of‐plane deformation at the edge of the sheet can be used with the pitch measurements to separate the effects of glass structural relaxation and film stress.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.     

Future Proof: The Transition to Digital at IFI Archive

Informed by research over the past two years and the work of colleagues in peer institutions, the IFI Irish Film Archive developed a six-year Digital Preservation and Access strategy which launched in 2014. Fundamental to this Strategy was the design and installation of digital archive tools for long term preservation and the redesign of workflow practices to facilitate accession and management of high resolution digital film and broadcast assets and associated metadata. This article outlines the steps taken and standards applied in developing a future proof digital audiovisual archive.