Dithieno[3,2‐b:2′,3′‐d]pyrrol‐Cored Hole Transport Material Enabling Over 21% Efficiency Dopant‐Free Perovskite Solar Cells

Dopant‐free hole transport materials (HTMs) are essential for commercialization of perovskite solar cells (PSCs). However, power conversion efficiencies (PCEs) of the state‐of‐the‐art PSCs with small molecule dopant‐free HTMs are below 20%. Herein, a simple dithieno[3,2‐b:2′,3′‐d]pyrrol‐cored small molecule, DTP‐C6Th, is reported as a promising dopant‐free HTM. Compared with commonly used spiro‐OMeTAD, DTP‐C6Th exhibits a similar energy level, a better hole mobility of 4.18 × 10^?4 cm² V^?1 s^?1, and more efficient hole extraction, enabling efficient and stable PSCs with a dopant‐free HTM. With the addition of an ultrathin poly(methyl methacrylate) passivation layer and properly tuning the composition of the perovskite absorber layer, a champion PCE of 21.04% is achieved, which is the highest value for small molecule dopant‐free HTM based PSCs to date. Additionally, PSCs using the DTP‐C6Th HTM exhibit significantly improved long‐term stability compared with the conventional cells with the metal additive doped spiro‐OMeTAD HTM. Therefore, this work provides a new candidate and effective device engineering strategy for achieving high PCEs with dopant‐free HTMs.     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件.其中NiO、Cu2O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6?5.0 eV范围内电池性能的变化,并分析Al、...     

Inorganic Electron Transport Materials in Perovskite Solar Cells

In the past decade, the perovskite solar cell (PSC) has attracted tremendous attention thanks to the substantial efforts in improving the power conversion efficiency from 3.8% to 25.5% for single-junction devices and even perovskite-silicon tandems have reached 29.15%. This is a result of improvement in composition, solvent, interface, and dimensionality engineering. Furthermore, the long-term stability of PSCs has also been significantly improved. Such rapid developments have made PSCs a competitive candidate for next-generation photovoltaics. The electron transport layer (ETL) is one of the most important functional layers in PSCs, due to its crucial role in contributing to the overall performance of devices. This review provides an up-to-date summary of the developments in inorganic electron transport materials (ETMs) for PSCs. The three most prevalent inorganic ETMs (TiO₂, SnO_2, and ZnO) are examined with a focus on the effects of synthesis and preparation methods, as well as an introduction to their application in tandem devices. The emerging trends in inorganic ETMs used for PSC research are also reviewed. Finally, strategies to optimize the performance of ETL in PSCs, effects the ETL has on J–V hysteresis phenomenon and long-term stability with an outlook on current challenges and further development are discussed.     

Deconvoluting Energy Transport Mechanisms in Metal Halide Perovskites Using CsPbBr3 Nanowires as a Model System

Understanding energy transport in metal halide perovskites is essential to effectively guide further optimization of materials and device designs. However, difficulties to disentangle charge carrier diffusion, photon recycling, and photon transport have led to contradicting reports and uncertainty regarding which mechanism dominates. In this study, monocrystalline CsPbBr₃ nanowires serve as 1D model systems to help unravel the respective contribution of energy transport processes in metal-halide perovskites. Spatially, temporally, and spectrally resolved photoluminescence (PL) microscopy reveals characteristic signatures of each transport mechanism from which a robust model describing the PL signal accounting for carrier diffusion, photon propagation, and photon recycling is developed. For the investigated CsPbBr₃ nanowires, an ambipolar carrier mobility of μ = 35 cm² V⁻¹ s⁻¹ is determined, and is found that charge carrier diffusion dominates the energy transport process over photon recycling. Moreover, the general applicability of the developed model is demonstrated on different perovskite compounds by applying it to data provided in previous related reports, from which clarity is gained as to why conflicting reports exist. These findings, therefore, serve as a useful tool to assist future studies aimed at characterizing energy transport mechanisms in semiconductor nanowires using PL.     

Surface Reconstruction Engineering with Synergistic Effect of Mixed-Salt Passivation Treatment toward Efficient and Stable Perovskite Solar Cells

Surface passivation treatment is a widely used strategy to resolve trap-mediated nonradiative recombination toward high-efficiency metal-halide perovskite photovoltaics. However, a lack of passivation with mixture treatment has been investigated, as well as an in-depth understanding of its passivation mechanism. Here, a systematic study on a mixed-salt passivation strategy of formamidinium bromide (FABr) coupled with different F-substituted alkyl lengths of ammonium iodide is demonstrated. It is obtained better device performance with decreasing chain length of the F-substituted alkyl ammonium iodide in the presence of FABr. Moreover, they unraveled a synergistic passivation mechanism of the mixed-salt treatment through surface reconstruction engineering, where FABr dominates the reformation of the perovskite surface via reacting with the excess PbI₂. Meanwhile, ammonium iodide passivates the perovskite grain boundaries both on the surface and top perovskite bulk through penetration. This synergistic passivation engineer results in a high-quality perovskite surface with fewer defects and suppressed ion migration, leading to a champion efficiency of 23.5% with mixed-salt treatment. In addition, the introduction of the moisture resisted F-substituted groups presents a more hydrophobic perovskite surface, thus enabling the decorated devices with excellent long-term stability under a high humid atmosphere as well as operational conditions.     

Ultrafast Responsive and Low-Energy-Consumption Poly(3-hexylthiophene)/Perovskite Quantum Dots Composite Film-Based Photonic Synapse

Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr₃ perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory t hrough facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr₃ quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA_0.5Cs_0.5PbBr₃ quantum dots (Mix-QDs) and CsPbBr₃ quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spike-dependent plasticity and exhibits extremely low energy consumption of 3 × 10⁻¹⁷ J per synaptic event.     

PZT-PMN压电陶瓷的制备和压电性能的研究

先驱体法制备了具有高纯钙钛矿相的Pb(Zr1/2Ti1/2)1-x(Nb2/3Mg1/3)xO3(PZT-PMN)体系压电陶瓷。按配比在650~800℃预烧合成了B位(ZrTiO4)1-x-(MgNb2O6)x的固溶体,X-射线衍射(XRD)分析表明了该B位先驱体氧化物在750℃预合成后呈类似ZrTiO4的单相结构,用该B位先驱体与PbCO3煅烧后可生成具有高纯的钙钛矿相的陶瓷粉料。通过对体系压电性能与配比x的关系研究发现,在准同型相界附近四方相一侧的配比x=0.1处,该系统压电性能达最大。通过掺杂Nb5 含量为0.02可使机电耦合系数(kp)达到0.637。     

PINT铁电晶体的助熔剂法制备工艺与介电性能

用助熔剂法制备了准同型相界附近的弛豫铁电体基钛铌铟酸铅（Pb（In1／2Nb12）0.63Ti0.37O3，简称PINT）铁电单晶体，研究了四氧化三铅（Pb3O4）与二氟化铅（PbF2）助熔剂对钙钛矿结构相稳定性的不同作用。用四氧化三铅（Pb3O4）和三氧化二硼（B2O3）作为助熔剂获得尺寸达5mm的纯钙钛矿相结构PINT单晶体，利用显微分析方法、X射线衍射技术研究了单晶体的微观形貌和相结构，测量了〈100〉取向单晶体样品的介电温度谱。