Bonding Strength Regulates Anchoring-Based Self-Assembly Monolayers for Efficient and Stable Perovskite Solar Cells

Anchoring-based self-assembly (ASA) has emerged as a material-saving and highly scalable strategy to fabricate charge-transporting monolayers for perovskite solar cells (PSCs). However, the interfacial hole-extraction and electron-blocking performances are highly dependent on the compactness of the ASA monolayers, which has been largely ignored though it is very crucial to the efficiency and stability of PSCs. Here, strategically designed hole-transporting molecules with different anchoring groups are incorporated to investigate the effect of bonding strength on monolayer quality and correlate these with the performance of p-i-n structured PSCs. It is unraveled that the anchoring groups with a stronger bonding strength are advantageous for improving the assembly rate, density, and compactness of ASA monolayer, thus enhancing charge collection and suppressing interfacial recombination. The prototypical PSCs based on optimal ASA monolayer achieve a high power conversion efficiency (PCE) of 21.43% (0.09 cm²). More encouragingly, when enlarging the device area by tenfold, a comparable PCE of 20.09% (1.0 cm²) can be obtained, suggesting that the ASA strategy is practically useful for scaling-up. The robust anchoring of the ASA monolayer also enhances devices stability, retaining 90% of initial PCE after three months. This study provides important insights into the ASA charge-transporting monolayers for efficient and stable PSCs.     

High-Performance ITO-Free Perovskite Solar Cells Enabled by Single-Walled Carbon Nanotube Films

The unprecedented advancement in power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) has rendered them a promising game-changer in photovoltaics. However, unsatisfactory environmental stability and high manufacturing cost of window electrodes are bottlenecks impeding their commercialization. Here, a strategy is introduced to address these bottlenecks by replacing the costly indium tin oxide (ITO) window electrodes via a simple transfer technique with single-walled carbon nanotubes (SWCNTs) films, which are made of earth-abundant elements with superior chemical and environmental stability. The resultant devices exhibit PCEs of ≈19% on rigid substrates, which is the highest value reported to date for ITO-free PSCs. The facile approach for SWCNTs also enables application in flexible PSCs (f-PSCs), delivering a PCE of ≈18% with superior mechanical robustness over their ITO-based counterparts due to the excellent mechanical properties of SWCNTs. The SWCNT-based PSCs also deliver satisfactory performances on large-area (1 cm² active area in this work). Furthermore, these SWCNT-based PSCs can retain over 80% of original PCEs after exposure to air over 700 h while ITO-based devices only sustain ≈60% of initial PCEs. This work paves a promising way to accelerate the commercialization of ITO-free PSCs with reduced material cost and prolonged lifetimes.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

CH3NH3PbI3和CH3NH3MnI3的电子结构和光学性质研究

采用第一性原理计算,研究了有机金属卤化物钙钛矿CH₃NH₃PbI₃和CH₃NH₃MnI₃的电子结构、磁性和光吸收。CH₃NH₃PbI₃和CH₃NH₃MnI₃都是具有直接带隙半导体,CH₃NH₃MnI₃磁基态为G型反铁磁序(G-AFM)。CH₃NH₃MnI₃在G-AFM状态下的带隙值为1.668 eV;当系统处于FM态时,多数自旋通道的带隙为0.696 eV,少数自旋通道的带隙为2.148 eV。结果表明,具有FM态的CH₃NH₃MnI₃的光激发电子将迅速熔化局域磁序。最后计算了CH₃NH₃PbI₃和CH₃NH₃MnI₃的光学特性,结果表明具有铁磁态的CH₃NH₃MnI₃(FM)表现出较强的红外光吸收。     

Electronic band structure and optoelectronic properties of double perovskite Sr2MgMoO6 through modified Becke-Johnson potential

The crystal structure, electronic and optical properties of double perovskite Sr₂MgMoO₆ have been calculated by using the full-potential linear augmented plane wave (FP-LAPW) method. The band structure and density of states (DOS) were carried out by the modified Becke–Johnson (mBJ) exchange potential approximation based on the density functional theory (DFT). The calculated band structure shows a direct band gap (Γ–Γ) of 2.663 eV for Sr₂MgMoO₆. The compound Sr₂MgMoO₆ has a triclinic structure with the space group I-1, the lattice parameters a=5.5666 Å, b=5.5661 Å and c=7.9191 Å, which are used in our calculations. The optical parameters, like dielectric constant, refractive index, reflectivity and energy loss function were also calculated and analyzed. This work provides the first quantitative theoretical prediction of the optical properties and electronic structure for the triclinic phase of Sr₂MgMoO₆.     

Efficient Inverted Perovskite Solar Cells with a Fill Factor Over 86% via Surface Modification of the Nickel Oxide Hole Contact

The poor interface quality between nickel oxide (NiO_x) and halide perovskites limits the performance and stability of NiO_x-based perovskite solar cells (PSCs). Here a reactive surface modification approach based on the in situ decomposition of urea on the NiO_x surface is reported. The pyrolysis of urea can reduce the high-valence state of nickel and replace the adsorbed hydroxyl group with isocyanate. Combining theoretical and experimental analyses, the treated NiO_x films present suppressed surface states and improved transport energy level alignment with the halide perovskite absorber. With this strategy, NiO_x-based PSCs achieve a champion power conversion efficiency (PCE) of 23.61% and a fill factor of over 86%. The device's efficiency remains above 90% after 2000 h of thermal aging at 85 °C. Furthermore, perovskite solar modules achieve PCE values of 18.97% and 17.18% for areas of 16 and 196 cm², respectively.     

钙钛矿型铁电薄膜的溶胶-凝胶法制备

介绍了溶胶－凝胶薄膜制备法，研究了浸涂法和旋涂法对薄膜质量的影响因素和控制理论，阐述薄膜干燥法与裂纹形成机理，基片因素对晶体结构的影响等问题。讨论溶胶－凝胶法制膜过程中，铁电薄膜全钙钛矿相的形成和晶粒的定向生长。     

Ferroelectric Poling of Methylammonium Lead Iodide Thin Films

Seemingly contradictory reports on polar domains and their origin have surrounded the controversial discussion about the ferroelectricity of the methyl ammonium lead iodide (MAPbI₃) thin films that are commonly employed in perovskite solar cells. In this work, microscopic modulations of the polar domain patterns upon application of an electric poling field are correlated with macroscopic changes to the currents through the MAPbI₃ layer. Piezoresponse force microscopy is used to monitor the widening, narrowing, generation or extinction of polar domains, as well as shifts of the domain walls at room temperature under an in‐plane electric poling field that is applied between two laterally organized electrodes. This poling leads to a net polarization of individual grains and the thin film itself. Macroscopically, this net polarization results in a persistent shift of the diode characteristics that is measured across the channel between the electrodes. Both the modulation of the polar domains upon electric poling and the concurrent persistent shift of the electric currents through the device are the unambiguous hallmarks of ferroelectricity, which demonstrate that MAPbI₃ is a ferroelectric semiconductor.