Effects of temperature, ammonium and glucose concentrations on yeast growth in a model wine system

In enology, alcoholic fermentation is a complex process involving several mechanisms. Slow and incomplete alcoholic fermentation is a chronic problem for the wine industry and factors leading to sluggish and stuck fermentations have been extensively studied and reviewed. The most studied cause of sluggish and stuck fermentation is the nitrogen content limitation. Nevertheless, other factors, such as temperature of fermentation and sugar concentration can affect the growth of yeasts. In this study we modelled the yeast growth‐cycle in wine model system as a function of temperature, sugar and ammonium concentrations; the individual effects and the interaction of these factors were analysed by means of a quadratic response surface methodology. Cell concentrations and weight loss were monitored in the whole wine fermentation process. The results of central composite design show that lower is the availability of nitrogen, higher is the cell growth rate; moreover, initial nitrogen concentration also influences survival time of Saccharomyces cerevisiae.     

Immobilized α-amylase from Bacillus licheniformis: a potential enzymic time—temperature integrator for thermal processing

Biphasic and nth-order models were tested as to their usefulness to fit experimental inactivation data of Bacillus licheniformis α-amylase, immobilized on glass beads, and were discussed with respect to their suitability to characterize the considered enzymic system as a time—temperature integrator (TTI) to evaluate heat processes. Both isothermal and non-isothermal inactivation experiments were carried out. Model (kinetic) parameters (rate constant k, activation energy E_A and reaction order n) were estimated using a non-linear regression procedure. The results obtained, especially the activation energy of about 293 kJ mole^–1, indicated a potential use of this system as a TTI for heating processes in the temperature range of 96–108°C.     

白云鄂博主矿开拓运输工艺转换有关问题的探讨

本文对白云鄂博主矿采场铁公路联合运输向公路运输转换位置是否确定为1638m水平以及运输工艺转换过程中相关问题进行分析论证，提出主矿采场铁路至少可向下延深一个水平，技术上可行，节约运费千万元以上。     

广播电视发射台技术指标集中自动测试系统

本文介绍了利用计算机技术、网络技术、三遥技术对广播电视发射技术指标进行实时自动测试的系统，以便进一步为安全优质播出提供技术保证。     

改进工艺操作方法 降低脱硅锆能耗

从分析脱硅的条件出发,引导出新的工艺操作方法、工艺参数和加料方法。用一年的生产实践说明该新工艺操作方法的技术经济效益。     

对我国催化重整工艺专利市场的思考

根据我国专利法的原则，在对我国催化重整和芳烃生产专利检索过程和结果进行分析的基础上，阐述了对目前我国催化重整工艺专利市场的几点看法并提出对策。     

浸胶工艺对Nomex蜂窝性能的影响

本文研究了浸胶工艺对Ｎｏｍｅｘ蜂窝性能的影响，分析探讨了提高Ｎｏｍｅｘ蜂窝性能及外观质量的途径。研究结果表明：采取新的浸胶工艺制作的Ｎｏｍｅｘ蜂窝，各项性能全面达到法国宇航材料标准。     

A method for the efficient prioritization of infrastructure renewal projects

The infrastructure renewal program at MIT consists of a large number of projects with an estimated budget that could approach $1 billion. Infrastructure renewal at the Massachusetts Institute of Technology (MIT) is the process of evaluating and investing in the maintenance of facility systems and basic structure to preserve existing campus buildings. The selection and prioritization of projects must be addressed with a systematic method for the optimal allocation of funds and other resources. This paper presents a case study of a prioritization method utilizing multi-attribute utility theory. This method was developed at MIT's Department of Nuclear Engineering and was deployed by the Department of Facilities after appropriate modifications were implemented to address the idiosyncrasies of infrastructure renewal projects and the competing criteria and constraints that influence the judgment of the decision-makers. Such criteria include minimization of risk, optimization of economic impact, and coordination with academic policies, programs, and operations of the Institute. A brief overview of the method is presented, as well as the results of its application to the prioritization of infrastructure renewal projects. Results of workshops held at MIT with the participation of stakeholders demonstrate the feasibility of the prioritization method and the usefulness of this approach.     

TFT有源矩阵α－Si∶H薄膜PECVD淀积工艺研究

分析了α－Ｓｉ∶Ｈ薄膜的质量和厚度对α－Ｓｉ∶ＨＴＦＴ关键性指标的影响，深入、详细地讨论了其ＰＥＣＶＤ淀积工艺，并在实验的基础上确定了最佳淀积工艺参数，从而获得了高性能的７５ｍｍ３７２×２７６像素α－Ｓｉ∶ＨＴＦＴ有源矩阵     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。