新型冷弯型钢辊环的研究

通过解剖国外优质辊环，并根据冷弯型钢的轧制特点，设计出不同档次的冷弯型钢辊环系列。并用铸造辊环取代锻造辊环。新型铸造辊环Ｃｒ５的寿命是锻造辊环Ｃｒ１５的３－５倍。     

一种检测电火花加工间隙状态的柔性方法

介绍了一种在数控电火花加工脉冲电源中实现间隙状态检测的柔性方法，具有阈值设置柔性、状态识别准确的特点，巧妙地用一个稳压二极管的钳位作用提高了间隙状态识别的精度，非常适合需经常改变加工参数的加工实验使用。     

钢管除锈机设计与经验

介绍了钢管除锈机的基本原理及设计过程,实践证明:使用钢管除锈机不仅保证了除锈质量,还提高了工作效率。     

用直接纺丝法制芳纶短纤维

研究了直接纺丝制取芳纶短纤维的新方法。讨论了纤维长度、直径及力学性能与纺丝条件的关系。发现影响纤维长度的主要因素是空气层高度和喷丝速度,影响纤维直径的主要因素为喷口直径及喷丝速度。此外,还用PPTA短纤维制成了均匀的PPTA"浆粕"纤维。     

采用“两级跳间隙镀”电源的无氰碱铜工艺研究

回顾了对无氰碱铜研究历史中的经验教训。在大量试验基础上，提出了一种706无氰碱铜工艺。对配位剂的恰当选择、组合及工艺条件控制，能将临界活化电流密度降得很小，使钢铁件上能在宽JK范围内直接预镀铜而取得良好结合力。用开发的“冲击镀加间隙镀两级跳自动电源”，更有利于提高结合力及提高抗阴阳离子杂质影响能力。加入适量硝酸钾能降低液温并提高允许JK，有利于无氰加厚镀铜及复杂管件装饰镀。     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

基于机器视觉的转辙机缺口检测方法研究

针对现有转辙机缺口检测方法所存在的问题,本文介绍了一种基于机器视觉技术的转辙机缺口检测基本方法及其原理和步骤。文章详细论述了LSD算法的工作原理,同时本文作者对该算法做出了改进。最后将改进的LSD算法应用在转辙机缺口检测当中,结果表明该检测算法具有良好的稳定性和快速性,并且能够很好的解决转辙机缺口检测的问题。     

Nitrogen incorporated diamond-like carbon films by microwave surface wave plasma CVD

Nitrogen incorporated diamond like carbon films have been deposited by microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD), using methane (CH₄) as the source of carbon and with different nitrogen flow rates (N₂ / CH₄ flow ratios between 0 and 3). The influence of the nitrogen incorporation on the optical, structural properties and surface morphology of the carbon films were investigated using different spectroscopic techniques. The nitrogen has been incorporated into DLC:N films which was confirmed by the X-ray photoelectron spectroscopy (XPS) measurement. Moreover, the nitrogen incorporation was accompanied by a variation in the optical gap, which was attributed to the removal or creation of band tail states.     

Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.     

Numerical study of the transfer of shock-wave loading to a screened flat wall through a layer of a powdered medium and a subsequent air gap

The two-velocity, two-temperature model with two stresses in a mixture of a gas and solid particles contacting each other is used to numerically study the dynamic effect of an air shock wave incoming onto a solid wall with a screening layer of a porous powdered medium at some distance from the wall. The process is described for the case of one-dimensional planar motion of the gaseous and disperse phases under the assumption of a viscoelastic behavior of the powder skeleton. The effect of stepwise shock waves onto the porous powdered screen is considered. The influence of parameters of the screening layer and the air gap on the dynamics of loading of the screened solid wall is analyzed. __________ Translated from Fizika Goreniya i Vzryva, Vol. 43, No. 1, pp. 132–142, January–February, 2007.