使用超声搅拌实现精密KOH各向异性体硅腐蚀

对使用超声搅拌和不加搅拌时(100)单晶硅的腐蚀特性进行了研究和对比.使用超声搅拌,可以得到光滑的、无小丘的腐蚀表面,整个硅片腐蚀深度的误差不超过1μm.实验结果表明,该方法可以有效地实现精密KOH各向异性体硅腐蚀.     

图案化GaAs衬底外延InP局域表面成核层生长

使用光学显微镜、原子力显微镜和微区喇曼光谱对在纳球光刻图案化GaAs衬底的孔洞区进行金属有机化学气相沉积(MOCVD)进而对InP成核层进行了研究.实验结果表明,该局域表面InP的成核层生长和孔洞的大小、方向、位置关系不大,与MOCVD的生长条件相关.与渐变缓冲层生长相比,在InP的成核层中没有出现穿透位错,其结晶质量随着温度的升高而提高,但其表面粗糙度会随着温度的升高而增加,这个现象可能和它的3D岛状生长有关.AFM测试结果表明,提高Ⅴ/Ⅲ比可以在较低的温度下抑制其表面粗糙度降至纳米量级.微区喇曼光谱测试表明,在适当条件生长下可获得InP成核层的二维生长方式.该研究为进一步基于ART机理在二维图案化GaAs衬底开展InP异质外延研究奠定基础.     

CO2激光切割质量的视觉检测(Ⅱ) 切割质量的评价方法及其视觉图像特征

提出了利用切割面下缘粗糙度作为评价切割面质量的方法.建立了侧面视觉检测系统,对激光切割过程中火花簇射行为进行分析.结果表明在一定工艺条件下,随着切割速度的变化,火花簇射喷射长度以具有极大值的倒U形曲线形式变化,最大的火花喷射长度(即火花簇射视觉图像不同亮度带像素数的极大值)对应于最低的切割面近下缘粗糙度.     

CZT晶体用化学机械抛光液的制备及其性能研究

化学机械抛光工艺是碲锌镉(Cadmium Zinc Telluride,CZT)晶体表面处理的关键技术之一.其中,化学机械抛光液是影响晶片表面质量的重要因素.目前用于CZT晶片的抛光液主要是依靠进口的碱性抛光液,这严重制约了我国CZT晶体研究的发展.采用硅溶胶和次氯酸钠(NaClO)溶液作为主要原料,制备了碱性化学机械抛光液.然后采用该抛光液对CZT晶片表面进行了化学机械抛光,并对抛光表面进行了表征.实验结果表明,抛光后晶片表面的粗糙度小于2 nm,因此采用硅溶胶-次氯酸钠碱性抛光液可制备出高质量的CZT抛光表面.     

一种基于粗集理论的图像分割方法

提出了一种基于粗集理论的图像分割方法．在图像聚类过程中的对象往往是具有相似关系而不是等价关系的对象．在本文中将相似关系应用到粗集理论中来解决图像中的聚类问题．由于噪声的干扰,往往会影响到图像分割的效果．本方法提出了边界点的最大隶属原则并进而提出了边界点的粗糙度以及边界点的最大隶属原则,从而大大减小了噪声的干扰．在此基础上给出了聚类质量的评价函数．该方法为进行图像分割提供了一个崭新的视角．     

磨损及其影响因素

介绍了磨损的基本类型及其影响因素,改善润滑、提高摩擦副材料性能和降低摩擦副表面粗糙度将有助于降低磨损.     

锗单晶片的碱性腐蚀特性分析

讨论了锗单晶研磨片在强碱性腐蚀液和弱碱性腐蚀液中的腐蚀特性.研究了锗单晶片在两种不同腐蚀液中的腐蚀速率随腐蚀液温度、浓度的变化规律.通过探索腐蚀速率、表面光洁度及腐蚀去除量和表面粗糙度的关系,可知腐蚀片表面光洁度和腐蚀速率有关而与去除量无关.腐蚀片的表面粗糙度和去除量有关,去除量越大,粗糙度越大.表面粗糙度也与腐蚀液的碱性强弱有关,当去除量相同时,在强碱性腐蚀液中的锗腐蚀片的表面粗糙度更小.在实际应用中,应针对不同目的,选择适宜的化学腐蚀工艺.     

Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density

We present a method to obtain Si-fins with a critical dimension (CD) below 20 nm, separated by a minimum distance of 25 nm and connected by a common source/drain (S/D) pad. The method comprises of recursive spacer defined patterning to quadruple the line density of a 350 nm pitch resist pattern defined by 193 nm lithography. Spacer defined patterning is combined with resist based patterning to simultaneously define fins and S/D pads in a Silicon on Insulator (SOI) film. CD and Line Width Roughness (LWR) analysis was done on top down SEM images taken in a center die and in an edge die of a 200 mm wafer. The average CD is 17 nm in the center of the wafer and 18 nm at the edge. The LWR is 3 nm for both center and edge. Additional process steps to remove etch damage and round the top corner of the fin (i.e. oxidation followed by H₂ anneal) further reduce the CD to 13 nm.     

Optimization of black oxide coating thickness as an adhesion promoter for copper substrate in plastic integrated-circuit packages

Copper-oxide coating applied onto the copper substrate has emerged as an alternative to metallic coatings to improve adhesion with polymeric adhesives and molding compounds. The interfacial-bond strengths between the black oxide-coated Cu substrate and epoxy-based, glob-top resin were measured in button-shear tests, and the failure mechanisms were identified from the fracture-surface examination. The emphasis was to establish the correlation between the coating thickness, the surface roughness, and the interfacial adhesion with respect to treatment time. It was found that at the initial stage of treatment a thin layer of flat, cuprous oxide developed, above which fibrillar-cupric oxide was formed with further treatment until saturation with densified fibrils at about 150 sec. The interfacial-bond strength between the oxide-coated copper substrate and glob-top resin increased gradually with increasing treatment time, until the bond strength reached a plateau constant after a treatment for about 150 sec. There was a functional similarity between the oxide thickness, the surface roughness, and the interface-bond strength with respect to treatment time. A treatment time of 150 sec is considered an optimal condition that can impart the highest interface adhesion.     

超光滑光学基底表面原子力显微镜测试方法

原子力显微镜(AFM)是评价亚纳米级表面粗糙度σRMS最主要的测试仪器,但其测试结果会因采样条件(采样间距、采样点数)及测量点位置变化而改变。以AFM测试超光滑光学基底随机表面为例,应用累积功率谱理论建立了确定合理采样条件的方法,避免了采样条件选取不当带来的数据丢失或冗余;通过全局优化选取测量点和局部优化选取测量点相结合,降低了样品表面区域性差异给测试结果带来的不确定性,并大大减少了获得可靠测试结果所需的测试量。上述工作为超光滑光学基底AFM测试提供了有效方案。