下T6-361井多井防碰绕障技术

下T6—361井是一口双靶定向井，由于受地面和地质条件的限制，必须穿越9口井，其中最近的4口井防碰距仅为13—32m，钻井施工难度大，是一口较典型的多井防碰绕障定向井。在优化井身剖面设计、优选钻具组合、采用导向钻井技术的基础上，采取了一系列安全钻进措施，顺利钻至设计井深。对该井的地质工程设计、井眼轨迹控制及防碰绕障技术等进行了介绍，对同类型井的施工有一定的借鉴。     

毛家河水电站库区岩溶发育特征及邻谷渗漏分析

毛家河水电站位于碳酸盐岩地区，库首距左岸邻谷可渡河14—23km、距右岸邻谷北盘江干流14．8km，水库两岸大型落水洞、溶洞及地下岩溶管道相对较为发育。为初步判断水库存在邻谷渗漏的可能性，对水库两岸可溶岩地层岩溶发育形态、特征及规律进行了勘察，并根据现场地质调查资料对3条可疑渗漏带进行了分析论证。     

水驱强度对油井压力动态的影响研究

建立了水驱强度影响下的水驱油渗流数学模型，在获得数学模型解的基础上，计算了考虑井筒储存、表皮效应以及水驱强度影响下油井的压力及压力导数典型曲线，分析了压力动态特征，通过这些研究为水驱油藏的试井分析提供了理论基础，为水驱油藏的识别提供了一种新的手段。     

裂隙岩体边坡稳定性的渗流与应力耦合分析

用裂隙岩体渗流与应力耦合分析的四自由度全耦合法对岩质边坡进行耦合分析,通过强度折减有限元法求解岩体边坡的稳定安全系数。四自由度全耦合法建立了同时以渗流水压和位移为未知量的耦合方程组,使得渗流场与应力场的求解能够一次性完成,与两场交叉迭代分析方法相比达到了彻底的完全耦合。通过强度折减,整个系统达到不稳定状态,有限元计算将不收敛,此时的折减系数就是安全系数。算例表明由此求得的边坡稳定安全系数和滑动面都与传统方法十分接近。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

饱和—非饱和土体非稳定渗流数值分析

本文对一般的非饱和渗流有限元计算方法加以改进，有效地消除了非饱和渗流数值计算中存在的数值弥散现象。同时还提出了一种简便有效的逸出面处理新方法，并给出了非饱和非稳定渗流计算的实例。     

基底元素表面富集与扩散阻档层

根据An－Ag系统以及An－Cu系统的扩散系数计算，提出了扩散阻挡层模型。利用这个模型对Au－Ag系统进行有关实验，得利了较好的验证。     

The Role of Metastable Atoms in a Homogeneous Atmospheric Pressure Barrier Discharge in Helium

A one-dimensional fluid model for homogeneous atmospheric pressure barrier discharges in helium is presented by considering elementary processes of excitation and ionization including a metastable atom effect. Using this model we investigate the behaviours of the helium metastable atoms in discharges as well as their influence on the discharge characteristics. It is shown that the metastable atoms with a relatively high concentration during the discharge are mainly produced in the active phase of the discharge and dissolved in the off phase. It is also found that the metastable atom collisions can not only provide seed electrons for discharges but also influence the concentration of ions. A reduction of matestable atom density results in a drop in the charged particle densities and causes a qualitative change in the discharge patterns.     

电源对介质阻挡放电(DBD)激发准分子(XeCl*)辐射的影响

本文对电源参数如电压幅值、频率及正负电压对介质阻挡放电激发准分子XeCl 紫外 (30 8nm)辐射的影响进行了实验研究。结果表明 ,UV辐射随电压幅度的增加而增强 ,但效率下降 ;提高频率 ,增加了放电次数 ,导致UV辐射的增强 ;此外 ,在较高的频率下 ,电压上升沿变陡 ,使得电子获得的能量主要用于原子的激发和电离。正、负电压放电的不对称源于电极结构的不对称而引起的放电过程的差异 ,负电压内电极可向放电管中馈入更多的能量 ;比较发光光谱可判断生成准分子的等离子体化学过程没有明显的差别     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.