数字技术在广播电视发射机中的应用

在CSD-1-Ⅰ-1型Ⅰ波段1kW单通道电视发射机中,数字技术被应用于逻辑控制系统,常见的数字集成电路有H005（H004）双与非门电路、JK触发器等,主要介绍其应用原理。     

时变源作用下介观LC电路系统量子态的演化

采用代数动力学规范变换方法,求出含时变电压源的介观LC电路量子态随时间演化算符的精确解,研究含时变电压源的介观LC电路量子态的相干特性.结果表明,电路中电容器储电量q的几率是一个运动的Gauss波包,导出波包中心电量与外电源的一般关系.研究了输入电压源为单矩形脉冲电压的特例.     

Analysis of Thermal Effects in Laser Rod Pumped by Repetitively Pulsed Laser Diode Array

Based on some assumptions, the numerical model of thermal distribution in solid state laser crystal pumped by pulsed laser diode is set up due to the pumped intensity distribution. Taking into account the property of YAG materials that varies with temperature, the transient temperature distribution of the laser crystal is calculated using finite element method on condition that K is a constant and a function of temperature. Then, the influence of the pumping parameters on the thermal effect in laser crystal is also discussed. This study is helpful to optimize the design of the diode side pumped solid state lasers.     

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450°C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500°C. The first formed phase is Ti₅Si₃ in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500°C, the Ti₅Si₄ phase and C49 TiSi₂ phase formed in the regions close to Ti films and Si substrates, respectively.     

Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye

The electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 × 10¹² eV⁻¹ cm⁻². The diode shows a photovoltaic behavior with a maximum open circuit voltage V_oc of 0.23 V and short-circuit current I_sc of 20.8 μA under 100 mW/cm². It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction.     

计算机辅助光学设计在LPSSL中的应用

应用计算机辅助光学设计可以充分挖掘灯抽运固体激光器(LPSSL)的潜力。根据计算机辅助光学设计的分类,综述了光学软件在灯抽运固体激光器研发过程中的应用,并给出具体应用实例。     

Modelling of electrostatic gate operations in the Kane solid state quantum computer

The nuclear spin quantum computer proposed by Kane [Nature 393 (1998) 133] exploits as a qubit array ³¹P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic ‘A’ gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of ‘J’ gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of the study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of ³¹P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modelling package (Integrated Systems Engineering AG).     

一种基于概率的QoS多播路由遗传算法

文章提出了一种基于概率的QoS多播路由遗传算法.该算法通过一种精度可控的次优化方法,解决了基 于非精确状态延时带宽限制代价最小的QoS多播路由问题.仿真实验表明,该算法能有效地屏蔽网络状态的非精确性,忍受较大的网络更新触发门限值,并保持较好的路由性能.     

Analysis of prediction performance in wavelet minimum complexity echo state network

Echo state network （ESN） has become one of the most popular recurrent neural networks （RNN） for its good prediction performance of non-linear time series and simple training process. But several problems still prevent ESN from becoming a widely used tool. The most prominent problem is its high complexity with lots of random parameters. Aiming at this problem, a minimum complexity ESN model （MCESN） was proposed. In this paper, we proposed a new wavelet minimum complexity ESN model （WMCESN） to improve the prediction accuracy and increase the practical applicability. Our new model inherits the characters of minimum complexity ESN model using the fixed parameters and simple circle topology. We injected wavelet neurons to replace the original neurons in internal reservoir and designed a wavelet parameter matrix to reduce the computing time. By using different datasets, our new model performed better than the minimum complexity ESN model with normal neurons, but only utilized tiny time cost. We also used our own packets of transmission control protocol （TCP） and user datagram protocol （UDP） dataset to prove that our model can deal with the data packet bit prediction problem well.     

Effect of plasma process-induced damage on bias temperature instability of MOSFETs

For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, t_ox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage V_th and of linear drain current I_dlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of V_th and I_dlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO₂/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.