Shallow hydrogen-induced donor in monocrystalline silicon and quantum wires

Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at 450 °C, have been studied. The temperature dependences of equilibrium and non-equilibrium carrier concentration and relaxation kinetics were investigated. IR absorption lines of bistable shallow donor electronic excitations were detected. The obtained experimental data demonstrate that the bistable shallow donors can be identified as quantum wire defect nanoclusters.     

可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备

利用新研制出的垂直式低压CVD(LPCVD)SiC生长系统,获得了高质量的50mm 3C-SiC/Si(111)衬底材料.系统研究了3C-SiC的n型和p型原位掺杂技术,获得了生长速率和表面形貌对反应气体中SiH4流量和C/Si原子比率的依赖关系.利用Hall测试技术、非接触式方块电阻测试方法和SIMS,分别研究了3C-SiC的电学特性、均匀性和故意调制掺杂的N浓度纵向分布.利用MBE方法,在原生长的50mm 3C-SiC/Si(111)衬底上进行了GaN的外延生长,并研究了GaN材料的表面、结构和光学特性.结果表明3C-SiC是一种适合于高质量无裂纹GaN外延生长的衬底或缓冲材料.     

用于制备硅LED的太阳能电池技术

集成电路工艺发展使得芯片内部的互连成为芯片延时的主要问题.制备出高光效的硅LED已经成为OEIC发展的瓶颈.硅是间接带隙半导体,而且载流子寿命较长.所以使用硅材料制备发光器件是长久以来特别引人关注而又较难解决的问题.采取降低非辐射复合速率,增加辐射复合的机会可以实现硅LED的发光.介绍了用于制备硅LED的太阳能电池技术原理和主要方法,以及采用这一原理实现PERL硅电池和区熔硅衬底非晶硅电池用于制备LED的技术.     

步进电机一体化控制系统的设计与实现

文章应用STM32F103ZE处理器、液晶触摸显示屏、TB6560步进电机驱动芯片,构建了集步进电机控制器和驱动器为一体的步进电机控制系统。通过人机界面上的指令提示,能实现对步进电机进行基本的运动控制。     

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

A series of 3C-SiC films with varied film thickness up to 17 μm have been grown on Si(1 0 0) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (<3 μm) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (>10 μm) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b.     

基于STM32的多功能γ能谱仪设计

文中介绍了一种基于STM32微处理器的γ能谱仪的研制.该仪器由主探测器、主控电路,GPS模块,SD卡存储模块,USB接口电路构成.是一种集辐射强度检测、辐射源地理位置定位,数据存储,USB传输等功能于一体的监测系统,大大丰富并提高了能谱仪的性能.     

基于STM32的半导体激光光源驱动器的设计与实现

为实现半导体激光光源驱动器的工程化,设计了一套低功耗、低成本的实用型光源驱动器。该驱动器以ARM微控制器STM32F103VCT6为核心,以TEC控制器MAX1968为执行器件,配以相应的软件,以模糊PID计算控制量。实验证明,设计的控制器实现了半导体激光器驱动电流和温度的精密控制,温度控制精度可达到±0.03℃,激光输出功率稳定度可达到0.002dB,具有高性价比和高集成度。     

FFT算法在微控制器上的设计与实现

文中描述了一种针对快速傅里叶变换(FFT)嵌入式运算系统的设计,基于ST公司ARM架构的微控制器STM32F4,该控制器拥有强大的数据运算处理能力,在硬件架构以及数据、信号处理上做出了独特的设计。着重介绍了基于Cortex-M4的FFT软件实现,应用,以及数据采样,运算等一系列问题,最后明确了下一步的研究方向。     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

高能粒子辐射直拉硅中辐照缺陷的控制

受高能粒子辐射,在直拉硅中会产生各种辐照缺陷,对硅及硅基器件的性能产生不利的影响,对辐照缺陷的控制可以增加硅的辐照稳定性。