强流离子注入均匀性控制

本文讨论了强流离子注入机的全机械扫描靶室中实现剂量高均匀性和高重复性注入的变速扫描设计原理及控制技术。     

离子注入在Power MosFET中的应用

本文结合笔者的科研,论述了离子注入在Power MOS FET制作中的应用,并指出:由于离子注入较之扩散具有一系列优点,因此,离子注入不仅在制作Power MOS FET中作用巨大,而且在其他功率器件中的应用也将越来越广泛。     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

金属中注入氮离子改善抗磨粒磨损性能的研究

在金属材料(轴承钢、铝、钛)中注入不同剂量的氮离子,用称重法测量被注材料抗磨粒磨损性能的改善状况。当注入剂量达到10~(17)/cm~2时,此性能有所改善。在(2～5)×10~(17)/cm~2范围内,此性能改善状况较佳。     

Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO₂ encapsulant in a H₂-As₄ atmosphere. A higher activation efficiency in the net electron concentration and the gateless saturated channel current is measured for SiO₂ encapsulated wafers annealed under arsine overpressure than for capless annealed ones using Cr-O doped bulk GaAs substrates. On the other hand, the net donor concentration peak is higher for implanted buffer epi layers capless annealed under arsine overpressure than for SiO₂ encapsulated ones. Secondary ion mass spectrometry (SIMS) studies of the Cr decoration of the implant damage indicate that the damage from the 100 keV Si implant anneals out at 840°C while a temperature of 900°C is required to anneal out the 260 keV Se implant damage. An explanation of these differences is provided using an impurity redistribution model and charge neutrality considerations. Excellent Hall electron mobilities at liquid nitrogen temperature of 5400–9200 cm²/V-sec are measured for Si-implanted buffer epi substrates.     

破伤风毒素的提纯及形成离子通道的特性

应用硫酸铵分段沉淀和 Ultrogei AcA_(34)凝胶过滤对破伤风毒进行了提纯,并对形成的离子通道在中毒作用中的功能进行了讨论。提纯的毒素与抗粗制毒素血清形成一条沉淀线,于聚丙烯酰胺凝胶电泳中形成单一的蛋白带,分子量为15万,等电点为5.95,毒力为1～3×10~4MLD/μg 蛋白。给小鼠注射低剂量毒素引起迟发性强直性痉挛;注射高剂量毒素引起快速的类肉毒毒素的松弛性麻痹,直至死亡。应用 Patch clamp 技术,破伤风毒素于人工磷脂膜上形成离子通道。只有当膜两侧存有 pH 梯度时毒素才形成离子通道,因此是 pH 依赖的。通道的电导系数为9 PS。     

可见分光光度检测离子色谱仪分析铬鞣液中铬含量

本文介绍了用可见分光光度检测离子色谱仪分析铬鞣液中铬含量,允其适用于大量样品的连续分析。实验证明,该方法精密度高,变异系数0.32%,线性关系好,回收率为98～100.25%,准确,快速,方便是该方法的特点。     

Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm

Focused Ion Beam (FIB) micromachining of Solid Immersion Lenses (SILs) in substrate material offers optical analysis solutions for current and future technologies without the limitations of external SIL systems. This work presents an efficient single iteration calibration algorithm. This algorithm enables the implementation of FIB created SILs using a variety of substrate materials, process chemistries and most importantly different SIL shapes to match sample thicknesses. The successful application on silicon and silicon carbide is presented by creating a 50 μm wide refractive lens segment with a radius of curvature of 60 μm. Laser scanning microscope images of a silicon sample demonstrate the optical benefit with a measured resolution of 274 nm.     

离子净化技术在微波管中的应用研究

本文简要介绍离子净化技术，采用离子净化技术处理微波管（毫米波行波管）零、部件的试验结果。     

Transient-enhanced diffusion in shallow-junction formation

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B⁺, P⁺, or As⁺ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B⁺ and P⁺ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B⁺ species, while for P⁺ species, it depends on both temperature and P⁺ dose. The relatively small amount of diffusion associated with As⁺ implants is favorable for shallow-junction formation with spike annealing.