离子交换型Cu／SiO2催化剂的制备和表征

用离子交换法制备了Ｃｕ／ＳｉＯ２催化剂，并在催化活性与稳定性方面与浸渍型的Ｃｕ／ＳｉＯ２催化剂进行了对比，采用差热分析（ＤＴＡ）、Ｘ射线衍射（ＸＲＤ）、比表面测定等方法对催化剂进行了表征     

用Interphako干涉显微镜测量离子交换玻璃薄片中的梯度折射率分布

本文用 Interphako 干涉显微镜测量了经 NaNO_3盐浴处理的玻璃薄片中的梯度折射率分布。将剪切微差干涉测得的结果与剪切干涉的结果进行了比较,并讨论两种测量方法的特点和误差。     

氧离子能量对离子束辅助沉积Al2O3薄膜的结构及光学性能的影响

利用氧离子束辅助脉冲反应磁控溅射技术在聚酰亚胺基底上沉积Al2O3薄膜。这项技术在溅射高纯铝靶材的同时利用低能氧离子进行氧化来控制薄膜的化学配比。研究了薄膜沉积过程中离子束辅助的作用以及离子束放电电压对Al2O3薄膜的化学成分、结构、表面形貌、光学性能以及沉积速率的影响。结果发现,离子束放电电压对薄膜的化学成分具有显著影响,当电压增加到200 V,薄膜已基本达到完全化学计量比且薄膜为非晶结构;薄膜表面粗糙度随着离子束放电电压的增加而减小,当电压达到300V时,薄膜具有最小的表面粗糙度;通过对Al2O3薄膜透射谱的测量,分析薄膜的光学特性,获得了薄膜的光学常数随离子束放电电压的变化规律,发现氧离子束辅助沉积的薄膜具有较高的折射系数和较低的消光系数;另外,薄膜的沉积速率在电压增加到300V时达到最大值70 nm/min,是未采用离子束辅助时沉积速率的5倍。     

斜离子束辅助沉积对Co30Nb70薄膜结构及其热稳定性的影响

本文研究了离子束辅助沉积(IBAD)Co30Nb70薄膜过程中离子束入射角对薄膜微结构及热稳定性的影响.实验结果表明,在0°到75°范围内改变离子束入射角均可得到Co30Nb70非晶薄膜,但样品微结构出现变化,观察到多孔和沟槽结构.所有样品经300℃退火30 min,入射角为45°制备的样品出现强织构bcc亚稳相,其它入射角沉积的样品均保持非晶相.继续将样品在450℃退火30 min,入射角45°沉积的样品中bcc亚稳相消失,溶人非晶相;15°和75°入射沉积的样品开始晶化.分析认为离子束入射角变化引起的原子混合效应的改变,以及薄膜中的多孔结构对上述变化有重要影响.     

Morphology Control and Optical Absorption Properties of Ag Nanoparticles by Ion Implantation

Ion implantation is a powerful method for fabricating nanoparticles in dielectric.For the actual application of nanoparticle composites,a careful control of nanoparticles has to be achieved.In this letter,the size,distribution and morphology of Ag nanoparticles are controlled by controlling the ion current density,ion implantation sequence and ion irradiation dose.Single layer Ag nanoparticles are formed by Ag+ion implantation at current density of 2.5μA/cm2.By Ag and Cu ions sequential implantation,the siz...     

Recombination luminescence from defects in boron-ion implantation-doped diamond using low fluences

 Two identical, high purity, natural type IIa diamonds, which displayed the ubiquitous blue cathodoluminescence (CL) band at ≈ 2.9 eV, as well as an indication of the corresponding green band at ≈ 2.4 eV, have been equivalently doped by using extremely low dose B⁺- and C⁺-ion CIRA-implantations respectively. Comparative CL measurements showed changes in the intensities of the 2.9 and 2.4 eV bands and the generation of bands at ≈ 4 eV, as well as at ≈ 3.5 and ≈ 4.6 eV (the latter two in the B⁺-CIRA diamond). The results are commensurate with the model (proposed previously) in which the 2.9 and 4 eV bands are generated respectively by electron-hole recombinations at negatively charged acceptor- and positively charged donor-like, intrinsic defects. The present results indicate that Coulomb interactions between the latter defects and (at least partially) compensated, negatively charged, boron acceptors, generate the 3.5 and 4.6 eV bands, which may be considered as higher energy (≈ 0.6 eV) replicas of the 2.9 and 4 eV bands. In both cases, two electrons and a hole interact just before the hole combines with an electron. Such a configuration of charges seems related to, and could possibly be described as, a type of ”ionised exciton molecule”, where the ”bonding” of two negative ”nuclei” is facilitated by the presence of the hole. The CL measurements further indicate that the 2.4 eV band forms when a high enough density of, in this case, neutral acceptors are present. These neutral acceptors compete with the valence band to supply holes for recombination at the negatively charged, acceptor-type, intrinsic defects which are, in the absence of the boron, responsible for the generation of the blue, 2.9 eV band. Received: 5 December 1997 / Accepted: 13 December 1997     

30.4 nm Si/C多层膜反射镜的制备与测量

采用离子束溅射镀膜装置制备了一种新的材料组合Si/C多层膜 ,用于 30 4nm波段的正入射多层膜反射镜。并用软X射线反射率计测得其反射比最大值为 0 14。有效地抑制了 15 0nm处的二级衍射峰。     

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.     

基于虚拟仪器的液态调配器控制系统

基于虚拟仪器技术设计了HT-7托卡马克离子回旋共振加热液态调配器控制系统。系统硬件由PC机、液压传感器、数据采集卡,模拟输出卡、接口电路和油泵、电动球阀组成的油路系统等组成。系统界面采用虚拟仪器开发软件LabVIEW设计。系统根据测量得到的液态调配器各支节当前硅油液位高度,和匹配高度相比较,采用自动或手动控制的方法,对各支节中的硅油液位进行控制,从而达到离子回旋共振加热系统阻抗匹配的目的。     

电力系统智能化运维中GIS设备SF6气体泄漏检测方法研究

现有技术中的变电站GIS设备内SF6气体泄漏浓度较大,检测精度较低,本文设计了TMS+XD芯片提高巡视机器人性能,采用离子迁移法设计SF6检测技术,利用扫描窗口提供的SF6浓度分析离子波谱,更为精准地判断气体泄漏规律;采用差分能量检测(Differential Energy Detection DED)算法和概率学公式掌握SF6气体泄漏浓度,进而制定出最佳填充范围,增加变电站GIS设备的安全性。试验表明,本研究检测系统输出的SF6泄漏浓度为15.8mol/ml,检测精度为92.5%,SF6气体泄漏浓度少,检测精度高。