水压环形缝隙泄漏量的试验研究

在水压系统环形缝隙泄漏试验基础上，对圆柱形配合状态下的缝隙泄漏量进行了理论和试验对比研究，分析了两者的变化规律。得出的结果可以为水压元件的设计提供试验依据。     

裂解炉对流段二次注汽过热炉管失效原因分析

通过对发生腐蚀穿孔的BA-1104裂解炉对流段二次注汽过热炉管进行了宏观腐蚀形貌分析,对含裂纹部位进行了光学显微镜观察,断口进行扫描电镜观察以及对腐蚀产物的化学成分和金相组织分析,指出造成炉管腐蚀穿孔的决定性因素与操作温度及介质中存在的碱有关。进而提出了腐蚀控制与防范的措施,确保裂解炉的安全运行。     

裸置海底自沉降热油管道泄漏扩散的数值研究

根据计算流体力学建立海底海泥区域与海水区域的流固耦合传热多相流模型,海泥区域视为饱和含水多孔介质。运用软件模拟了裸置在海底的热油管道在输送过程中泄漏后原油在海泥和海水中的分布情况和温度场的变化情况,并对不同的泄漏点进行了分析。模拟时考虑了裸置海底管道的自沉降和海水中压强的影响。模拟结果表明,泄漏点对泄漏原油的扩散分布有很大影响;当泄漏点在土壤区域开始泄漏时,原油在土壤中呈弧形分布,过一段时间后沿土壤与管道外保温层流入海水中,顶端呈现喷射形,两侧呈螺旋状,并逐渐向海面流动;当泄漏点在海水区域时,泄漏的原油呈现喷射形,在浮力的作用下逐渐向海面流动;泄漏位置不同,海水和海泥温度场的分布有很大差异。海水区域和海泥区域的交界面对原油分布和温度场分布有很大影响。     

声发射技术在阀门检漏中的应用

提出采用声发射技术检测阀门的泄漏，介绍了声发射检测原理、声发射传感器的制作方式以及信号处理方式。试验和实际检测证明，采用声发射技术检测阀门的泄漏是可行的，检测简便、快捷、准确，扩大了声发射技术的应用范围，有效地监控了阀门的泄漏状况。     

A leakage-aware L2 cache management technique for producer-consumer sharing in low-power chip multiprocessors

This paper proposes a novel leakage management technique for applications with producer-consumer sharing patterns. Although previous research has proposed leakage management techniques by turning off inactive cache blocks, these techniques can be further improved by exploiting the various run-time characteristics of target applications in CMPs. By exploiting particular access sequences observed in producer-consumer sharing patterns and the spatial locality of shared buffers, our technique enables a more aggressive turn-off of L2 cache blocks of these buffers. Experimental results using a CMP simulator show that our proposed technique reduces the energy consumption of on-chip L2 caches, a shared bus, and off-chip memory by up to 31.3% over the existing cache leakage power management techniques with no significant performance loss.     

State estimation for fuzzy cellular neural networks with time delay in the leakage term, discrete and unbounded distributed delays

This paper deals with the problem of state estimation for fuzzy cellular neural networks (FCNNs) with time delay in the leakage term, discrete and unbounded distributed delays. In this paper, leakage delay in the leakage term is used to unstable the neuron states. It is challenging to develop a delay dependent condition to estimate the unstable neuron states through available output measurements such that the error-state system is globally asymptotically stable. By constructing the Lyapunov-Krasovskii functional which contains a triple-integral term, an improved delay-dependent stability criterion is derived in terms of linear matrix inequalities (LMIs). However, by using the free-weighting matrices method, a simple and efficient criterion is derived in terms of LMIs for estimation. The restriction such as the time-varying delay which was required to be differentiable or even its time-derivative which was assumed to be smaller than one, are removed. Instead, the time-varying delay is only assumed to be bounded. Finally, numerical examples and its simulations are given to demonstrate the effectiveness of the derived results.     

ERPN32-200离心泵机械密封失效原因分析

通过对ERPN32-200离心泵机械密封失效原因的分析,发现机械密封的实际密封效果不仅与机械密封自身的性能有关,而且与相关零部件的加工尺寸的精度等级以及维修时的装配质量有着重要的关系,同时针对不同的问题提出了相应的措施,延长了机械密封的使用寿命。     

埋地天然气管道泄漏数值模拟

给出了天然气管道泄漏几何区域图形,建立了天然气泄漏控制方程,基于控制体积原理和多孔介质理论,利用计算流体力学软件对埋地天然气管道泄漏过程进行了数值模拟。通过模拟,得到了天然气在土壤和空气中泄漏浓度分布,并分析了风速对天然气组分的扩散影响规律,确定了安全区域,为天然气管道泄漏应急救援和安全管理提供了理论依据。     

坪北油田小排量找漏技术探索与应用

针对常规找漏工艺存在的漏点难找、找漏周期长等问题,坪北油田结合平台地面管网的实际情况,在原水泥车找漏技术的基础上探索开发出了适合自己的小排量找漏技术。通过实际应用,取得了良好的效果,不仅缩短了找漏周期,而且节约了作业成本,提高了经济效益。     

Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Ga₂O₃ and Ga₂O₃-TiO₂ (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant sources, [(CH₃)₂GaNH₂]₃, Ti(N(CH₃)₂)₄ and oxygen plasma. The uniform and smooth Ga₂O₃ and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga₂O₃ film, and the leakage currents of GTO films were comparable to Ga₂O₃ films. The leakage current density of a 40-nm-GTO film annealed at 600^∘C was approximately 1×10⁻⁷ A/cm² up to about 600 kV/cm.