氮掺杂二氧化钛的制备及可见光催化研究进展

TiO2在紫外光下具有优异的光催化性能，在废水处理、空气净化、抗茵等环保领域有着广泛的应用，但实现其可见光催化一直是研究的难点之一，而氮掺杂TiO2可以实现可见光催化，本文详细介绍了氮掺杂TiO2的制备方法、研究现状和可见光催化的应用情况，并对未来的发展趋势作了预测。     

Growth of La2Mo2O9 films on porous Al2O3 substrates by radio frequency magnetron sputtering

Synthesis conditions of La₂Mo₂O₉ thin film by radio frequency (RF) sputtering technique on Al₂O₃ ceramic substrates are studied. It is found that the deposition temperature and oxygen partial pressure are the most important factors for obtaining pure La₂Mo₂O₉ films. Varying both parameters, Mo-rich, stoichiometric, and Mo-deficient films are obtained. With increasing the La:Mo ratio, films become denser. A crust layer is observed on top of the Mo-rich and the Mo-deficient films. The formation of the La₂Mo₂O₉ phase is discussed with respect to the sputtering mechanism.     

Effect of substrate rotation on structure, hardness and adhesion of magnetron sputtered TiB2 coating on high speed steel

Titanium diboride (TiB₂) coatings have been deposited on stationary and rotating high speed steel substrates by magnetron sputtering of a TiB₂ target. The structure and hardness of the coatings and the coating–substrate adhesion have been investigated by X-ray diffraction, field emission scanning electron microscopy, nanoindentation and microscratch tests. The results show that substrate rotation has a significant effect on these structural and properties features. It was found that, with substrate rotation, the TiB₂ coating exhibits a columnar structure with random orientation and relatively low hardness and coating–substrate adhesion. On the other hand, without substrate rotation, the TiB₂ coating shows a strong (001) texture with dense, equiaxed grain structure. The hardness and coating–substrate adhesion of the coatings deposited on stationary substrates are much higher than those deposited on rotating substrates. The observed phenomena are discussed in terms of the energy of the sputtered flux, which varies with the substrate–target distance during deposition.     

Magnetic properties and microstructure of FePt–SiO2 nanocomposite films fabricated by nanocluster beam technology

Nanocluster beam technology combined with conventional sputtering was used to fabricate FePt–SiO₂ nanocomposite films in this present work. The post-deposition annealing affected the final particle size and size distribution of FePt nanoclusters. The effects of both volume fraction of SiO₂ matrix and annealing temperature on magnetic and microstructural properties were studied. Partial ordering, grain growth and agglomeration of FePt particles in FePt–SiO₂ nanocomposite films occurred during annealing. A higher volume fraction of SiO₂ matrix was effective in suppressing diffusion of atoms and magnetic exchange coupling of FePt grains. Excessive SiO₂ however resulted in a lower degree of FePt ordering and thus lower coercivity.     

Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering

Thermoelectric bismuth telluride thin films were prepared on SiO₂/Si substrates by radio-frequency (RF) magnetron sputtering. Co-sputtering method with Bi and Te targets was adopted to control films' composition. Bi_xTe_y thin films were elaborated at various deposition temperatures with fixed RF powers, which yielded the stoichiometric Bi₂Te₃ film deposition without intentional substrate heating. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above 290 °C. Change of dominant phase from rhombohedral Bi₂Te₃ to hexagonal BiTe was confirmed with X-ray diffraction analyses. Seebeck coefficients of all samples have negative value, indicating the prepared Bi_xTe_y films are n-type conduction. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of 225 °C (about − 55 μV/K and 3 × 10^− 4 W/K²·m, respectively). Deterioration of thermoelectric properties at higher temperature could be explained with Te deficiency and resultant BiTe phase evolution due to the evaporation of Te elements from the film surface.     

The effect of hydrogen in the mechanism of aluminum-induced crystallization of sputtered amorphous silicon using scanning Auger microanalysis

The metal-induced crystallization (MIC) of hydrogenated sputtered amorphous silicon (a-Si:H) using aluminum has been investigated using X-ray diffraction (XRD) and scanning Auger microanalysis (SAM). Hydrogenated, as well as non-hydrogenated, amorphous silicon (a-Si) films were sputtered on glass substrates, then capped with a thin layer of Al. Following the depositions, the samples were annealed in the temperature range 200 °C to 400 °C for varying periods of time. Crystallization of the samples was confirmed by XRD. Non-hydrogenated films started to crystallize at 350 °C. On the other hand, crystallization of the samples with the highest hydrogen (H₂) content initiated at 225 °C. Thus, the crystallization temperature is affected by the H₂ content of the a-Si. Material structure following annealing was confirmed by SAM. In this paper, a comprehensive model for MIC of a-Si is developed based on these experimental results.     

Influence of Ge addition on the morphology and properties of TiN thin films deposited by magnetron sputtering

Thin films of TM-X-N (TM stands for early transition metal and X = Si, Al, etc.) are used as protective coatings. The most investigated among the ternary composite systems is Ti-Si-N. The system Ti-Ge-N has been chosen to extend the knowledge about the formation of nanocomposite films. Ti-Ge-N thin films were deposited by reactive magnetron sputtering on Si and WC-Co substrates at T_s = 240 °C, from confocal Ti and Ge targets in mixed Ar/N₂ atmosphere. The nitrogen partial pressure and the power on the Ti target were kept constant, while the power on the Ge target was varied in order to obtain various Ge concentrations in the films. No presence of Ge-N bonds was detected, while X-ray photoelectron spectroscopy measurements revealed the presence of Ti-Ge bonds. Transmission Electron Microscopy investigations have shown important changes induced by Ge addition in the morphology and structure of Ti-Ge-N films. Electron Energy-Loss Spectrometry study revealed a significant increase of Ge content at the grain boundaries. The segregation of Ge atoms to the TiN crystallite surface appears to be responsible for limitation of crystal growth and formation of a TiGe_y amorphous phase.     

Raman spectra and structural analysis in ZrOxNy thin films

Raman spectroscopy has been used as a local probe to characterize the structural evolution of magnetron-sputtered decorative zirconium oxynitride ZrO_xN_y films which result from an increase of reactive gas flow in the deposition. The lines shapes, the frequency position and widths of the Raman bands show a systematic change as a function of the reactive gas flow (a mixture of both oxygen and nitrogen). The as-deposited zirconium nitride film presents a Raman spectrum with the typical broadened bands, due to the disorder induced by N vacancies. The recorded Raman spectrum of the zirconium oxide film is typical of the monoclinic phase of ZrO₂, which is revealed also by X-ray diffraction. Raman spectra of zirconium oxynitride thin films present changes, which are found to be closely related with the oxygen content in films and the subsequent structural changes.     

Coulomb explosion following electronic excitation in ion-solid interaction

In atomic collisions in solids by the ions with very strong electronic interaction, it is confirmed that the atomic displacement process is enhanced by electronic excitation. Two experimental results are introduced as examples. The first is the columnar defect formation in a cuprate superconductor Bi₂Sr₂CaCu₂O_x which is irradiated with 3.5 GeV Xe ions, the second is sputtering induced by highly charged ion (HCI) bombardment (Xe^q+; q=15-44). Since there are some indications to show that these phenomena might be the outcome of the Coulomb explosion process, we tried to make a molecular dynamics simulation of the sputtering process based on this Coulomb explosion mechanism. Good agreement between the simulation and experiment was found. For sputtering of electrically conductive materials, the importance of neutralization dynamics of the HCI and the highly charged region in the solid materials was indicated.     

功率密度对中频磁控溅射制备的氧化锌镓薄膜性能的影响

利用中频磁控溅射方法,溅射Ga2O3含量为6.7wt%的氧化锌镓陶瓷靶材,在低温下(约40℃)制备了ZGO薄膜.考察了溅射功率密度对ZGO薄膜的晶体结构、电学和光学性能的影响.结果表明:溅射功率密度对薄膜的结构、红外反射以及导电性能有较大影响.当溅射功率密度为3.58W/cm2,氩气压力为0.8Pa时,薄膜的电阻率低达1.5×10-3Ω·cm,方块电阻为23Ω时,可见光(λ＝400nm～800nm)平均透过率高于90%.