Characterization of an Au/n-Si photovoltaic structure with an organic thin film

We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal–semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φ_b of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current–voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde’s method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm².     

屏蔽在电磁兼容设计中的应用

本文简要介绍了电子设备在复杂电磁环境中的电磁兼容问题和电磁干扰现象,并详尽介绍了屏蔽在电磁兼容设计中的应用.最后通过计算和相关的实验给出了改进屏蔽措施的方法.     

Efficient Conjugated‐Polymer Optoelectronic Devices Fabricated by Thin‐Film Transfer‐Printing Technique

The fabrication of functional multilayered conjugated‐polymer structures with well‐defined organic‐organic interfaces for optoelectronic‐device applications is constrained by the common solubility of many polymers in most organic solvents. Here, we report a simple, low‐cost, large‐area transfer‐printing technique for the deposition and patterning of conjugated‐polymer thin films. This method utilises a planar poly(dimethylsiloxane) (PDMS) stamp, along with a water‐soluble sacrificial layer, to pick up an organic thin film (～20 nm to 1 µm) from a substrate and subsequently deliver this film to a target substrate. We demonstrate the versatility of this transfer‐printing technique and its applicability to optoelectronic devices by fabricating bilayer structures of poly(9,9‐di‐n‐octylfluorene‐alt‐(1,4‐phenylene‐((4‐sec‐butylphenyl)imino)‐1,4‐phenylene))/poly(9,9‐di‐n‐octylfluorene‐alt‐benzothiadiazole) (TFB/F8BT) and poly(3‐hexylthiophene)/methanofullerene([6,6]‐phenyl C₆₁ butyric acid methyl ester) (P3HT/PCBM), and incorporating them into light‐emitting diodes (LEDs) and photovoltaic (PV) cells, respectively. For both types of device, bilayer devices fabricated with this transfer‐printing technique show equal, if not superior, performance to either blend devices or bilayer devices fabricated by other techniques. This indicates well‐controlled organic‐organic interfaces achieved by the transfer‐printing technique. Furthermore, this transfer‐printing technique allows us to study the nature of the excited states and the transport of charge carriers across well‐defined organic interfaces, which are of great importance to organic electronics.     

基于线阵CCD的尺寸测量装置数据采集系统设计

电荷耦合器件(CCD)作为一种新型的光电器件被广泛地应用于非接触测量物体尺寸。CCD通过必要的光学系统和适合的驱动电路完成光电转换,将物体在空间域分布的光学图像转换成一列按时间域分布的电脉冲信号。以线阵CCD图像传感器TCD1251UD为例,设计了视频信号预处理电路,并采用可编程逻辑器件FPGA实现积分时间和频率同时可调的CCD驱动程序,完成了对CCD输出信号的数据采集。实验结果证明时序脉冲能够驱动CCD完成光电转换功能,数据采集电路能够采集到需要的信号数据。     

用于相控阵雷达的集成光学器件

用集成光学器件实现相控阵雷达天线的波束形成、控制和归零,有其独特的优点。本文介绍几种用于相控阵雷达的集成光学器件,包括:LiNbO_3集成光学功分器、电光相位调制器、大动态范围调制器和集成光学巴特勒矩阵。     

光神经网络中的半导体光电器件

叙述了光神经网络的基本概念，并介绍了光神经网络中使用中的半导体光电器件， 体可调制光电检测器（ＶＳＰＤ），具有内存贮光神经芯片，人工视网膜芯片，以及不对称的Ｆａｂｒｙ－Ｐｅｒｏｔ调制器（ＡＦＰＭ）的最新研究结果。     

两段式双稳半导体激光器下跳阈值点的确定

对Ｋｕｚｎｅｔｓｏｖ采用的速率方程加以修正，考虑了俄歇效应的影响，我们流子寿命不再作为常数处理，而写成载流子浓度的函数。由此导出了两段式双稳半导体激光器下跳阈值点载流子浓度所满足的隐函数解析表达式。通过该解析表达式确定出了器件存在双稳的必要条件。进而讨论了俄歇复合系数、吸收区偏置电流和长度等对双稳特性的影响。     

Pressure Sensor of Fiber Optics Coupling Type

The principle of fiber optics coupling pressure sensor with micro-power dissipation is introduced as well as the use of two-way signal single fiber transfer(measure signal and reference signal)to conduct a proportional measure.It also discusses the adopted ways for improving the stability temperature drift and the noise of the mea-suring system.     

Novel Ceramic‐Based Material for the Applications of Molded Interconnect Devices (3D‐MID) Based on Laser Direct Structuring

Molded interconnect devices (MID) based on laser direct structuring LPKF‐LDS^® technology are widely used in the realm of electronics. Nowaday, design and development of new materials with improved properties for 3D‐MID are in focus. In this work, novel materials based on alumina ceramic with copper oxide additives are developed for this technology. The effect of the sintering temperature and the doping amount of copper oxide on the metallization quality is investigated. Furthermore, the influence of laser process parameters (e.g., laser power, velocity’, and frequency) on process output namely groove dimensions, groove profile, characteristics of structured area, and quality of the final 3D‐MID products are discussed. The novel ceramic materials show high flexibility to realize very fine structures. Moreover, the laser‐structured and metallized area shows a free edge lap with good quality. After metallization high accuracy with copper line/pitch of 16 μm/20 μm is achieved.

     

USB设备盗窃文件案的分析与鉴定

该文章针对一起利用USB设备（U盘）盗窃文件案的证据分析与鉴定工作,给出了分析鉴定过程和鉴定中应注意的问题,通过对该案件电子取证的鉴定思路、鉴定过程以及鉴定的启示等三个方面来进行探讨,并介绍了USB设备描述符的确定、USBStor注册表键的分析、USB设备接入系统时盘符的分析和USB设备接入操作系统最初时间的确定等研究方法。文章对于当前的USB设备的电子证据鉴定工作具有一定的指导意义。