提高塑封双列直插式光耦合器绝缘耐压的设计和工艺要点

介绍了研制出其性能达国际先进公司同类产品水平的塑封双列直插式光耦合器的工作原理和提高绝缘耐压的技术难点，从引线框架设计、加工精度控制、内包封材料选型、理想内包封形状控制、塑封气密性的实现、环境条件的完善等方面讨论了提高绝缘耐压的设计和工艺要点。     

Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

The effect of the ion bombardment to unbalanced magnetron deposited, approximately 1.5 and 4.5 μm thick, Nb coatings have been investigated as the bias voltage was varied from U_B=−75 to −150 V. Increasing bias voltage increased the hardness of the coating from 4.5 to 8.0 GPa. This was associated with residual stress and Ar incorporation into the Nb lattice. Strong {110} texture developed in the samples deposited at low bias voltages, while beyond U_B=−100 V a {111} texture became dominant. However, strong {111} texture was observed only with the thicker 3Nb coatings. Secondary electron microscopy investigation of the coating topography showed fewer defects in the thicker coatings. All coatings exhibited good corrosion resistance, with the thicker coatings clearly outperforming the thinner ones. Excessive bias voltages (U_B=−150 V) was found to lead to poor adhesion and loss of corrosion resistance.     

HCMOS器件γ辐射损伤电路分析

本文对最基本的HCMOS器件(反相器和与非门)作了γ辐射损伤实验。通过器件性能变化,分析了γ辐射对电路的作用。     

气流式加速度传感器的敏感机理

介绍了在研制气流式加速度传感器过程中，为对气流式加速度传感器进行建模，作者对气流式加速度传感器的工作机理进行了理论性探讨。在分析过程中以流体力学、传热学和惯性理论为基础并结合实验结果，建立了适合于气流式加速度传感器的气体运动方程和能量方程。同时还讨论了热线测量加速度的方法及根据实验分析了输入加速度对腔体内温度及传感器输出电压的影响，从而为进一步研究一系列气流式传感器的工作机理提供了方法。     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

用于高压电容器的SrTiO3基陶瓷

报道ＳｒＴｉＯ３基陶瓷的制备方法和介电性质，给出了用此种陶瓷制成的高压电容器的试验结果，并对它位进行了讨论。     

A feasibility study of a direct-mapping parallel processing method to solve linear equations in load-flow calculation

With the growing size and complexity of power systems, system analysis—such as transients calculation—takes much time. Hence, fast calculation methods are required. Although parallel processing is a hopeful method, there have been difficulties in the parallel solution of linear equations which appear in power-flow calculations by the Newton-Raphson method. This paper aims at the fast calculation of the power-flow problem by means of parallel processing. In order to improve the suitability to the parallel solution of the differential equation in transients calculation, we assume the use of a direct-mapping parallel processing machine to map directly the network of a power system onto a network of processors. Under this assumption, we propose a new parallel-processing-oriented method in which the linear equation is solved by linear iterations between nodes with Aitken acceleration. We simulate the method on three model power systems and compare this Parallel Iterative Method (PIN) with a Parallel Direct Method (PDM) which uses the banded matrix according to the number of operations required. As a result, we can expect that PIM may solve linear equations faster than PDM with m processors, although the PIM might be inferior to the PDM with m × m processors, where m denotes the half-band width of the banded matrix.     

航空油品高频/高压电脱水微观机理

设计并建立了一套高压电物理化学显微分析装置，为研究高压电物理化学领域的微观机理提供了一种新的技术途径。采用该技术，研究了胜利稠油经6％加氢裂解柴油稀释的原料油的高频／高压电脱水的微观机理。该原料的脱水率达96．7％，高于传统的电脱水方法。     

单稳态触发器的结构及其开关级设计原理

根据单稳态触发器定时单元特性,提出了单稳态触发器的一般结构.在此基础上,运用传输电压开关理论进行了CMOS单稳态触发器的开关级设计研究,并具体设计了两个单稳态触发器.设计实例表明文中提出的方法不仅简单、有效,而且具有通用性.