一种基于Lange耦合器的S波段小型化集成功放

设计了一种全部采用国产芯片研制的小型化集成功放模块。该模块采用一种全新的结构模式,通过Lange耦合器将GaAs MMIC单片、单电源GaAs功率芯片和硅功率芯片混合集成,使得其体积比同等性能的功率放大器减小。测试结果表明,在工作电压36V、脉宽300μs、占空比10%的测试条件下,2.7～3.1GHz或3.1～3.4GHz带内输出功率均能达到50W,36V电源效率大于40%。     

纳秒量级脉冲光纤激光器研究进展

脉冲光纤激光器作为当前国内外激光领域研究的热点之一,其应用越来越广泛。介绍了获取纳秒量级脉冲激光输出的两种典型结构,并基于相应原理分析了各自的关键性技术。概括了国内外该方向的研究进展,提出了有待于解决的若干问题,最后对脉冲光纤激光器的应用和发展前景进行展望。     

一种用于接收机的低功耗自动增益控制环路

This paper proposes a new structure to lower the power consumption of a variable gain amplifier (VGA) and keep the linearity of the VGA unchanged. The structure is used in a high rate amplitude-shift keying (ASK) based IF-stage. It includes an automatic gain control (AGC) loop and ASK demodulator. The AGC mainly consists of six-stage VGAs. The IF-stage is realized in 0.18 μ m CMOS technology. The measurement results show that the power consumption of the whole system is very low. The system consumes 730 μ A while operating at 1.8 V. The minimum ASK signal the system could detect is 0.7 mV (peak to peak amplitude).     

单路反馈射频功放预失真线性化方法

该文基于记忆多项式模型,提出一种采用单路反馈的射频功放预失真线性化新方法,只需用正交解调后的IQ信号中的一路,就可完成对预失真器模型参数的获取。该方法可消除使用正交解调器所带来的增益和相位不平衡问题,且节省了一路反馈采样电路,在降低成本、简化设计的同时还能提高预失真线性化的性能。仿真和物理实验结果表明,该文提出的方法是正确的,能达到比较好的线性化效果。     

A cascode modulated class-E power amplifier for wireless communications

A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35 dB output power dynamic range. The peak power added efficiency (PAE) is 35%. The concept of the cascode power control of class-E RF PA operating at 2.2 GHz with 18 dBm output power was implemented in a CMOS technology and the performance has been verified by measurements. The prototype CMOS PA is tested by single tone excitation and by enhanced data rates for GSM evolution (EDGE) modulated signal. Digital predistortion is used to linearize the transfer characteristic. The EDGE spectrum mask is met and the rms error vector magnitude (EVM) is less than 4° in the entire output power range.     

一种相变存储器读出电路及其快速读出方法

针对大规模相变存储器所具有的寄生电容大、可能出现读破坏现象等特性,提出了一种读电压模式的相变存储器读出电路及其快速读出方法。基于SMIC 40nm CMOS工艺的仿真结果表明,在2.5V电源电压下,该方法可以在90ns的读出周期内正确读出位线寄生电容为30pF的存储单元数据,同时,该读出周期随位线寄生电容的减小而减小。另外,该方法可以和传统的Burst等快速读出方式并存,非常适用于带数据预读机制的高端存储器技术。     

1.5GHz CMOSECL输入接口的设计与测试

对一种高速CMOS ECL输入接口进行了分析研究,该接口包含一种双镜补偿的CMOS差分放大电路,采用0.18 μm CMOS工艺研制,实现了PECL电平兼容.经测试,该接口最高工作频率达1.5 GHz.     

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

立体声放大器特性的软件测量

在电子工作台（Electronics Workbench EWB）上，对立体声放大器电路进行了直流工作点分析、时域分析、零-极点分析和温度扫描分析，从而设计出高质量立体声放大器。     

A Novel Frequency Compensation Technique for Three-Stage Amplifier

Multistage amplifiers are urgently needed with the advance in technology, due to the fact that single-stage cascode amplifier is no longer suitable in low-voltage designs. Moreover, the short-channel effects of the sub-micro CMOS transistor cause output-impedance degradation and hence the gain of an amplifier is reduced dramatically[1~6]. For multistage amplifiers, most of the compensation methods are based on pole splitting and pushing the right-half-plane zero to high frequencies or pole-ze…