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61.
Wenan PAN 《等离子体科学和技术》2022,24(5):55601
Data analysis on tokamak plasmas is mainly based on various diagnostic systems, which are usually modularized and independent of each other. This leads to a large amount of data not being fully and effectively exploited so that it is not conducive to revealing the deep physical mechanism. In this work, Bayesian probability inference with machine learning methods have been applied to the electron cyclotron emission and Thomson scattering diagnostic systems on HL-2A/2M, and the effects of integrated data analysis (IDA) on the electron temperature of HL-2A with Bayesian probability inference are demonstrated. A program is developed to infer the whole electron temperature profile with a confidence interval, and the program can be applied in online analysis. The IDA results show that the full profile of the electron temperature can be obtained and the diagnostic information is more comprehensive and abundant with IDA. The inference models for electron temperature analysis are established and the developed programs will serve as an experimental data analysis tool for HL-2A/2M in the near future. 相似文献
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65.
在中国环流器一号(HL-1)等离子体物理实验中,增加了弹丸注入和电子回旋共振加热系统。对低温技术在其中的应用情况,液氦输送系统,输液方法及氦气回收系统做了介绍。在一次等离子体物理实验中,总共使用液氦2733L。在弹丸注入系统中,使装置的等离子体密度提高了1~2倍。在装置上成功地实现了电子回旋共振加热,使等离子体电子温度增加30%以上。 相似文献
66.
The operation of an ASTeX compact electron cyclotron resonance plasma source and its effect on the growth of GaN thin films
by electron cyclotron resonancemolecular beam epitaxy has been investigated. The role a flow limiting orifice plays in increasing
plasma stability as well as reducing ion damage and impurities in resultant films has also been studied. Both optical emission
spectroscopy as well as electrostatic (Langmuir) probe studies have been employed to elucidate the generation and transport
of charged and neutral species. With the introduction of the flow orifice, a substantial decrease in ion induced damage as
well as surface roughening in the films is observed. This can be accounted for in terms of a collisionally induced relaxation
of the grad-B acceleration of charged species toward the substrate in plasma sources employing axial solenoidal fields. 相似文献
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High ion density dry etching of compound semiconductors 总被引:1,自引:0,他引:1
S.J. Pearton 《Materials Science and Engineering: B》1996,40(2-3):101-118
The use of plasma sources that generate high ion densities (> 1011 cm−3) enables dry etching of compound semiconductors at high rates with anisotropic sidewalls. In this paper we review the use of several types of electron cyclotron resonance (ECR) plasma sources and contrast the result with those obtained under reactive ion etching conditions. Various problems occurring in dry etching will be discussed, including aspect ratio dependent etch rates, mask erosion, sidewall roughening and damage introduction into the semiconductor. This damage may consist of point and line defect creation, non-stoichiometric surfaces, resputtering of mask materials or deposition of contaminating films. The use of low or high substrate temperatures to control the desorption kinetics of etch products is also discussed; at low temperatures problems can occur with condensation of the etch gases onto the substrate, while at elevated temperatures it is necessary to thermally bond the sample to the r.f. powered electrode to obtain reproducibility. Etch selectivity between the components of heterostructure systems such as GaAs/AlGaAs, GaAs/InGaP, InGaAs/AlInAs and GaN/AlN is usually much worse under high ion density conditions because of the high rates and large physical component. 相似文献
69.
STUDY OF GYROMONOTRON WITH A COMBINING PERIODIC MAGNETIC FIELD AND A COAXIAL CYCLOTRON ELECTRON BEAM
吴坚强 《电子科学学刊(英文版)》1989,6(2):129-139
On the basis of a work of Wu Jianqiang et al.(1987),by making use of the linear kinetictheory,the gyromonotron with a combining periodic magnetic field and a coaxial cyclotron electron beam hasbeen analysed in detail.And the formulas of the electron beam to wave interaction power,frequency shift andstarting current,etc.have been derived. 相似文献
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