MIS型单晶硅液晶光阀

详细介绍了一种新颖、快速响应的金属－绝缘层－半导体构成的MIS型单晶硅液晶光阀的结构、工作机理、制作工艺和性能参数测试。液晶采用45°扭曲向列型混合场效应工作模式。所得到的光阀的极限分辨率为40lp／mm，口径40mm，最大对比度＞100：1，在930nm（△λ＝40nm）写入光灵敏度为20μW／cm2，响应时间为15ms。报道了该光阀在大屏幕投影显示中的应用。     

储层识别模式的研究

用数学方法建立气测井油气储层识别模式,以解决录井中实时软件在判别依据少的条件下,及时识别油气显示假异常的难题。该判别式经实用,正到率达90％。     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

约束放电激励千瓦级基模CO2激光器

本文研究了约束放电激励千瓦级基模CO2激光器。约束放电激励的思想核心是:利用正交或基本正交的电场或者电磁场在阴极位降区附近形成对带电粒子的捕集阱,由此产生对放电过程中从阴极发出的带电粒子的约束作用从而影响整个气体放电激励过程。     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。     

黄土塬区天然气地震技术和综合解释

黄土塬区复杂的地表条件难以获得可供解释的物探资料,本文给出了勘探天然气的地震技术,在野外弯线地震数据采集中,冲沟区运用了弯线高分辨率技术;塬上区采用非纵测线和地震测深观测系统,大药量、深井和强化组合法的接收条件。初步解决了弯线地震资料处理中二维滤波、静校正、速度分析等技术难题。摸索出一套以地震为骨架,构造解释与岩性解释相结合,重力-电法-地震联合解释落实古生界天然气构造圈闭的综合物探解释技术,并以实例展示方法的有效性。     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

高功率CO2激光器换热性能的研究

高功率CO2气体激光器的换热性能好坏是器件长期稳定运行的关键环节之一。本文以板翅式热交换器为例阐明了热交换器的计算和设计方法。     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。