Measurement of cross-sections for the (p, xn) reactions in natural molybdenum

Cross-sections for the residual radionuclide productions by proton-induced activation on natural molybdenum were measured up to 40 MeV by using a stacked-foil technique at the MC50 cyclotron of the Korea Institute of Radiological and Medical Sciences (KIRAMS). This work has given a new data set for the formation of the investigated radionuclides. The present results for most of the radionuclides showed in general good agreement with the earlier reported data as well as the theoretical data taken from the calculations based on the ALICE-IPPE code. The integral yields for thick targets were also deduced from the measured cross-sections of the produced radionuclides. The optimum production of the ^99mTc radionuclide with minimum impurities can be obtained at the energy ranges from 10 to 23 MeV, where the production yields were obtained as 597.15 MBqμA⁻¹h⁻¹ at saturation. The measured cross-sections are used for production of medically important radionuclides such as ^99mTc, ^94mTc and ^93m,gTc by using the medium-energy cyclotrons.     

Niederschlagsw?sser; subjektiv-?ffentliche Nachbarrechte

Nachbarn haben ein subjektiv-?ffentliches Recht auf unsch?dliche Ableitung von Niederschlagsw?ssern.     

Selection of water-dispersible carbon black for fabrication of uranium oxicarbide microspheres

Fabrication of uranium oxicarbide microspheres, a component of TRISO fuel particles for high temperature nuclear power systems, is based on the internal gelation of uranium salts in the presence of carbon black. In order to obtain a high quality product, carbon black should remain dispersed during all phases of the gelation process. In this study, the surface and structural properties of several commercial carbon black materials, and the use of dispersing agents was examined with the goal of finding optimal conditions for stabilizing submicron-sized carbon black dispersions. Traditional methods for stabilizing dispersions, based on the use of dispersing agents, failed to stabilize carbon dispersions against large pH variations, typical for the internal gelation process. An alternate dispersing method was proposed, based on using surface-modified carbons functionalized with strongly ionized surface groups (sodium sulfonate). With a proper choice of surface modifiers, these advanced carbons disperse easily to particles in the range of 0.15-0.20 μm and the dispersions remain stable during the conditions of internal gelation.     

Monte Carlo simulation study of the positron contribution to displacements per atom production in YBCO superconductors

The contribution from positrons to the displacements per atom (dpa) distribution induced by the gamma irradiation on YBCO superconducting slabs is presented. The procedure implemented previously by the authors was adapted to take into account the contribution from positrons to dpa induced by the gamma radiation. The results show that, when positrons are considered in the atom displacement process, the total dpa almost doubles at 10 MeV of incident gamma radiation. At that energy positrons contribute 7% more to the total dpa than electrons, although electrons maintain having the highest contribution up to about 8 MeV.     

Atomically Thin Femtojoule Memristive Device

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.     

Size distribution measurement and separation of ethanol cluster ion beams

The distributions of the number of molecules per cluster (cluster size) of ethanol cluster ion beams were measured by the time-of-flight method. The cluster sizes at the peak and minimum tail (minimum size) of the distribution increased with increase of the retarding voltage. A difference appeared between the measured minimum size and the calculated values using a formula based on the early measurements on the velocity distributions of gas clusters.     

Role of frustration in quasi 1D conductor — Charge ordering and/or CDW in (R1,R2-DCNQI)2M (M=Ag, Li, Cu) system —

Synchrotron X-ray high-resolution measurements have been performed to investigate the nature of the insulating state of a quarter-filled quasi-one-dimensional conductor (DI-DCNQI)₂Ag and the π-d interacted conductor (DBr-DCNQI)₂Cu. The two-fold structure in the ground state of (DI-DCNQI)₂Ag system consists of not only charge ordering columns but also monotonic charge dimerized columns caused by frustration among DCNQI columns. On the other hand, Cu salt in the insulating phase realizes a commensurate structure where the Cu charge ordering is coupled with the 3c-CDW in the insulator phase. The frustration among charged columns is restrained by the charge ordering of the Cu ions.     

Thin film growth of epitaxial, polycrystalline and amorphous SrRuO3

The SrRuO₃ thin films were grown on amorphous fused silica and (100) single crystal LaAlO₃ substrates by pulsed laser deposition method. On fused silica substrates, polycrystalline SrRuO₃ thin film was obtained and below the crystallization temperature, SrRuO₃ thin films show an amorphous phase. For the case of epitaxial growth on (100) single crystal LaAlO₃ substrate, the crystallization temperature of SrRuO₃ thin film was increased by ∼ 100 °C indicating that additional energy is necessary in order to obtain the epitaxial thin film. By using the eclipse method and the control of substrate temperature, the variations of surface morphologies and grain size were observed by atomic force microscope. Below the crystallization temperature, amorphous SrRuO₃ thin film shows hopping transport property of an insulator.     

一种面向数据密集型应用的并行程序执行模型

随着各领域需要处理的数据量越来越大,数据密集型应用也变得越来越被重视.该文提出一种包含数据访存层次和访存冲突等信息的新并行程序执行模型PSRAM(h).针对数据密集型应用以访存为主的特点,PSRAM(h)模型将程序执行时间简化为访存时间,通过分析各程序子段的访存层次和数量来预测串行程序的执行时间,进而通过使用各线程执行时间的最大值来预测并行程序的执行时间.使用PSRAM(h)模型下对最典型的数据密集型应用矩阵向量乘进行分析,在龙芯3A处理器和Intel Xeon E5520处理器两个平台上的测试结果表明,PSRAM(h)模型分析结果与实测结果大部分情况下误差小于20%.由此可见,针对数据密集型应用,PSRAM(h)不但可以给出程序执行时间的下限,还可以有效的预测程序的执行时间.