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排序方式: 共有151条查询结果,搜索用时 31 毫秒
31.
In this study, a new current-mode current-controlled universal filter with single input and three outputs is presented. The proposed circuit uses single-output current controlled conveyors (CCCIIs) and can simultaneously realize lowpass, bandpass and highpass filter functions all at high impedance outputs. Realization of notch and allpass responses does not require additional active elements. The circuit enjoys independent current-control of the parameters ω0 and ω0/Q without disturbing the gains of the lowpass, bandpass and highpass filters. Both its active and passive sensitivities are low. 相似文献
32.
Jaemin Shim 《International Journal of Electronics》2013,100(10):1609-1620
This paper presents the design of a 2.5/3.5-GHz dual-band low-power and low-noise CMOS amplifier (LNA), which uses the capacitor cross-coupling technique and current-reuse method with four switches. The proposed LNA uses a single RF block and a broadband input stage, which is a key aspect for the easy reconfiguration of a dual-band LNA. Switching at the inter-stage and output allows for the selection of a different standard. The dual-band LNA attenuates the undesired interference of a broadband gain response circuit, which allows the linearity of the amplifier to be improved. The capacitor cross-coupled gm-boosting method improves the NF and reduces the current consumption. The proposed LNA employs a current-reused structure to decrease the total power consumption. The inter-stage and output switched resonators switch the LNA between the 2.5-GHz and 3.5-GHz bands. The proposed dual-band LNA optimises power consumption by the securing gain, noise figure and linearity. The simulated performance reveals gains of 16.7 dB and 19.6 dB, and noise figures of 3.04 dB and 2.63 dB at the two frequency bands, respectively. The linearity parameters of IIP3 are ?5.7 dBm at 2.5 GHz and ?9.7 dBm at 3.5 GHz. The proposed dual-band LNA consumes 5.6 mW from a 1.8 V power supply. 相似文献
33.
We propose a highly linear low-noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third-order intermodulation distortion (IMD3) component and can provide a high third-order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed LNA achieves an IIP3 of + 15 dBm with a gain of 10.5 dB, a noise figure of 2.4 dB, and a power consumption of 6 mA at 1.5 V. 相似文献
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孙静 《上海电力学院学报》2010,(11)
提出了一种新型的低噪声掺Er光纤放大器(EDFA)。将光波长交错器的输入端口与普通EDFA的输出端相连接,用于降低噪声,信号光由光波长交错器的偶信道端口输出。利用光波长交错器的梳状反射特性,抑制EDFA的放大自发辐射(ASE),改善EDFA的噪声特性,使其具有低噪声的特点。采用4m长的掺Er光纤(EDF)作为增益介质,小信号功率为-26dBm时,在1530~1560nm带宽范围内,测得低噪声EDFA的噪声系数低于3.83dB,仅比噪声系数的量子极限3dB大0.83dB。 相似文献
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提出了集成应用空心振质量块、聚氨酯吸声带板的低噪声复合托板结构方案,并初步给出了实船应用方法。在此基础上开展了大尺度双壳结构水下振动、声辐射及输入功率流的试验研究。结果表明:应用低噪声复合托板后,双壳结构外壳20Hz~3000Hz频段振动加速度级降低3.1dB,5m处近场辐射声压级降低7.2dB且沿顺时针90°~270°周向降噪效果最为显著;结构输入功率流显著降低,由多峰变为单峰且峰值频率略向低频移动。 相似文献
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Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果 总被引:2,自引:0,他引:2
讨论了毫米波低噪声PHEMT的设计要点,藕助Schroedinger/Poisson方程及器件方程,进行了Ka波段AlGa/InGaAs低噪声PHEMT用异质层数值计算及CAD优化,确定出分子束外延MBE时诸层的最佳组分、浓度、与厚度、上述优化分析的结果用于器件的实验研制,取得了34.4GHz下噪声系数(NF)1.92dB、相关增益Ga6.5dB的国内最好结果。 相似文献