2-4GHz波段低噪声放大器的仿真设计

利用pHEMT工艺设计了一个2-4GHz宽带微波单片低噪声放大器电路。本设计中采用了具有低噪声、较高关联增益、pHEMT技术设计的ATF-54143晶体管,电路采用二级级联放大的结构形式,利用微带电路实现输入输出和级间匹配．通过ADS软件提供的功能模块和优化环境对电路增益、噪声系数、驻波比、稳定系数等特性进行了研究设计。最终使得该LNA在2-4GHz波段内增益大于20dB,噪声小于1-2dB,输出电压驻波比小于2,达到了设计指标的要求。     

一种低差分输出不匹配度的单转差分低噪声放大器

本文设计了一种应用于GPS接收机的单端输入差分输出低噪声放大器。我们提出了一种利用变压器或中心抽头差分电感中的电感耦合来降低差分输出不匹配度的方法。文中对降低不匹配度的原理进行了分析,并且讨论了如何选择电感尺寸。本文的LNA带ESD保护,使用TSMC 0.18um工艺实现,并且封装后在PCB上进行测试。LNA工作在1.575GHz,电压增益为24.6dB, 噪声系数为3.2dB,差分输出增益不匹配度小于0.2dB,相位不匹配度小于2度,LNA工作电压为1.8V,消耗5.2mA电流。     

X波段宽带单片低噪声放大器

从获取放大器的等噪声系数圆最大半径的角度来进行电路设计,设计了工作于X波段9～14GHz的宽带低噪声单片放大器,采用法国OMMIC公司的0.2μmGaAsPHEMT工艺(fT=60GHz)研制了芯片。在片测试结果为在9～14GHz,噪声系数<2.5dB,最小噪声系数在10.4GHz为2.0dB,功率增益在所需频段9～14GHz大于21dB,输入回波损耗<-10dB,输出回波损耗<-6dB。在11.5GHz,输出1dB压缩点功率为19dBm。     

低功耗低噪声CMOS放大器设计与优化

分析了两种传统的基于共源共栅结构的低噪声放大器LNA技术:实现噪声优化和输入匹配SNIM技术并在功耗约束下同时实现噪声优化和输入匹配PCSNIM技术。针对其固有不足,提出了一种新的低功耗、低噪声放大器设计方法。     

基于自适应相关多采样技术的CMOS图像传感器列级单斜ADC设计

为了降低CMOS图像传感器的噪声水平,本文提出了一种基于自适应相关多采样技术的单斜ADC,可以根据光强自动选择合适的斜坡信号完成A/D转换.通过在低照度下使用小范围、高增益的斜坡信号进行多采样操作,可以充分降低读出噪声.多斜坡发生器由温度计码电容型DAC实现,此外还分析并校准了斜坡信号的失调电压和增益误差.提出的单斜ADC是在标准的110 nm 1P4M工艺下设计仿真的.仿真结果表明:基于自适应相关多采样技术的单斜ADC不会增加总A/D转换时间,同时在8倍的前置放大器增益下实现了最低59μVrms的读出噪声.此外当前置放大器为2倍增益时,读出噪声从强光下的211μVrms降低到弱光下的92μVrms,噪声的降低对应于7.21 dB信噪比的提高.另外,本文的品质因数为3.77 nVrms·s.     

UHF RF Front-End Circuits in 0.35-μm Silicon on Insulator (SOI) CMOS

In this work, design and measurement results of UHF RF frontend circuits to be used in low-IF and subsampling receiver architectures are presented. We report on three low noise amplifiers (LNA) (i) single-ended (ii) differential (iii) high-gain differential and a double-balanced mixer all implemented in 0.35-μ m SOI (Silicon on Insulator) CMOS technology of Honeywell. These circuits are considered as candidate low-power building blocks to be used in the two fully-integrated receiver chips targeted for deep space communications. Characteristics of square spiral inductors with high quality (Q) factors (as high as 10.8) in SOI CMOS are reported. Single-ended and fully-differential LNA's provide gains of 17.5 dB and 18.74 dB at 435 MHz, respectively. Noise figure of the single-ended LNA is 2.91 dB while the differential LNA's noise figure is 3.25 dB. These results were obtained for the power dissipations of 12.5 mW and 16.5 mW from a 2.5-V supply for the single-ended and differential LNA's, respectively. High-gain low-power differential LNA provides a small-signal gain of 45.6 dB with a noise figure of 2.4 dB at 435 MHz. Total power dissipation of the high gain LNA is 28 mW from a 3.3-V supply. The double-balanced mixer provides a conversion gain of 5.5 dB with a noise figure of 13 dB at 2 MHz IF. The power dissipation of the mixer is 11.5 mW from a 2.5-V supply. The measured responses and the power dissipations of the building blocks meet the requirements of the communications system. The die areas occupied by the single-ended LNA, differential LNA, high-gain LNA and the mixer are 0.6 mm × 1.4 mm, 1 mm × 1.4 mm, 1.4 mm × 1.2 mm and 0.6 mm × 0.9 mm, respectively. Ertan Zencir received the B.Sc. and M.S. degrees in electrical and electronics engineering from Middle East Technical University, Ankara, Turkey, and Ph.D. degree in electrical engineering from Syracuse University, Syracuse, NY in 1995, 1997, and 2003, respectively. He joined the Electrical Engineering and Computer Science Department of University of Wisconsin-Milwaukee as an Assistant Professor in August 2004. 2003). His current research focuses on RFIC and transceiver design for wireless communications. Douglas Te-Hsin Huang was born in Chia-yi Taiwan. He received the B.S. degree in electrical engineering from National Taiwan Ocean University, Kee-lung, Taiwan in 1993, and the M.S. and Ph.D. degrees in electrical engineering from Syracuse University, Syracuse, New York, in 2001 and 2003, respectively. In 2004, he joined Skyworks Solutions Inc., where he is currently an RFIC Design Engineer. His research deals mainly with low-power, infrastructure, analog RFIC, and microwave integrated circuit designs. Besides microwave and semiconductor engineering, Dr. Huang has broad interest in art, music, and philosophy. Ahmet Tekin received his B.S. degree in Electrical Engineering from Bogazici University, Istanbul, Turkey in 2002 and MS degree in Electrical engineering form North Carolina A&T State University, Greensboro, NC. He is currently working towards his PhD degree at University of California, Santa Cruz, CA. He was a Research Assistant at RF Microelectronic Laboratory, North Carolina A&T State University, from 2002 to 2004. He worked on the design of low power UHF transceiver circuits for space applications. He is currently a Research Assistant at Bio-mimetic Microelectronic Systems Laboratory, University of California at Santa Cruz, working on implantable very low power UHF frequency transceiver for a body sensor network. Numan S. Dogan received the B.Sc. degree from Karadeniz Technical University, Trabzon, Turkey, in 1975, the M.Sc. degree from Polytechnic University, New York, in 1979, and the PhD degree from the University of Michigan, Ann Arbor, in 1986, all in electrical engineering. Since 1998, he has been with the Electrical and Computer Engineering Department, North Carolina A&T State University, Greensboro, North Carolina, where he is an Associate Professor. He was a Visiting Faculty Researcher at Air Force Research Laboratory (AFRL), Eglin Air Force Base, Florida, in 1998, and General Electric Corporate Research and Development Laboratory, Schenectady, New York, in 1999. His earlier research interests included microwave and millimeter-wave solid-state devices and circuits, high-temperature electronics, and silicon micromachining. His recent research interests include RF CMOS Integrated Circuits and low-power Medical Implant Communication Systems (MICS) transceivers. Currently he serves as the Chair of the IEEE Central North Carolina Section. In April 2004, he organized “a walking robot competition” for High School Students. He enjoys hiking to Alpine Lakes in the Pacific Northwest and fishing. Ercument Arvas (M'85–SM'89) received the B.S. and M.S. degrees from METU, Ankara, Turkey, in 1976 and 1979, respectively, and the Ph.D. degree from Syracuse University, Syracuse, New York, in 1983, all in Electrical Engineering. Between 1984 and fall of 1987, he was with the Electrical Engineering Department of Rochester Institute of Technology, Rochester, New York. He joined the Electrical Engineering and Computer Science Department of Syracuse University in 1987, where he is currently a Professor. His research interests include numerical electromagnetics, antennas, and microwave circuits and devices.     

一种超宽带低噪声放大器

提出一个共源共栅结构的超宽带低噪声放大器。该电路基于台积电0.18μmCMOS工艺,工作在3GHz～5GHz频率下,用来实现超宽带无线电。仿真结果表明,该低噪声放大器有最大13.6dB的增益。整个频段噪声系数小于1.9dB。输入和输出反射损耗都小于-11dB。一阶压缩点在-15dBm左右。功耗为18.7mW。     

Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2×2.2 mm². The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows:the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e^- at zero farad plus 8.2 e^- per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source ²⁴¹Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si).     

A 6-7 GHz, 40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13μm CMOS for IR-UWB applications

A wideband receiver RP front-end for IR-UWB applications is implemented in 0.13μm CMOS technology. Thanks to the direct sub-sampling architecture,there is no mixing process.Both LNA and VGA work at RF frequencies.To optimize noise as well as linearity,a differential common-source LNA with capacitive cross- coupling is used,which only consumes current of 1.8 mA from a 1.2 V power supply.Following LNA,a two-stage current-steering VGA is adopted for gain tuning.To extend the overall bandwidth,a three-stage staggered peaking technique is used.Measurement results show that the proposed receiver front-end achieves a gain tuning range from 5 to 40 dB within 6-7 GHz,a minimum noise figure of 4.5 dB and a largest IIP₃ of-11 dBm.The core receiver （without test buffer） consumes 14 mW from a 1.2 V power supply and occupies 0.58 mm² area.     

6135发电机组低噪声方舱电站设计研究

针对6135发电机组工作时的声场分布进行测量分析,通过对机组声强的测量找出其主要噪声源,针对机组的噪声分布及频谱特点设计出相应的低噪声方舱结构。