Issues in nonlinear stochastic grey box identification

Grey box identification refers to the practice of identifying dynamical systems in model structures exploiting partial prior information. This contribution reviews a method for stochastic grey box identification and surveys experiences and lessons of applying it to a number of industrial processes. Issues to be addressed include advantages and costs of introducing stochastics into the model, the question of what contribution must be expected from the model designer as opposed to what can be formalized in computer algorithms, and an outlook on future plans to resolve present shortcomings.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

Determination of the Coordinates of the Center of a Gaussian Beam by Means of a Matrix Photodetector Using a Weighting Method

A weighting algorithm to determine the coordinates of the center of a Gaussian laser beam projected onto a matrix photodetector is considered. The influence of the internal noise of the photodetector, the maximum brightness of the signal at the beam maximum, and the beam radius on the precision of the algorithm is investigated. Recommendations on image processing are presented.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

25mm厚钢板产生层间撕裂的原因和防治

层间撕裂并非是厚板独有的质量问题 ,结合工程实例 ,分析 2 5mm厚低合金钢板产生层间撕裂的原因。通过对钢材的超声波探伤检测、化学成分分析和Z向性能检测 ,指出层间撕裂主要与节点设计不当和钢材内非金属夹杂物偏析、分层有关 ,并提出了预防措施。对产生裂纹的构件视严重情况提出了不同的修补处理方法     

多变量系统故障诊断和容错控制新方法及其在精馏过程中的应用

本文提出一种多变量系统的故障诊断和容错控制新方法，整个系统由四个神经元组成。将本文方法用于二元精馏塔顶和塔底组分的容错控制，仿真结果证实了本文方法的有效性。该方法可望在难以建模的复杂化工过程中得到应用。     

Degradation of NiCr/CuNiMn/NiCr films on alumina substrates

This paper addresses the aging behaviour of NiCr/CuNiMn/NiCr triple layers on Al₂O₃ ceramics at temperatures up to 200°C for film thicknesses d0.5 μm. Investigations of the film structure and the increase of resistance and its temperature coefficient during the annealing process and studies of the dependence of this aging drift on both the film thickness and the storage temperature have been carried out. Furthermore, the film stress and the effect of substrate bending on resistance have been measured. The results can be explained by the irregular film structure (columns and small bridges between them), which causes stress and current concentrations as well as local creeping, cracking and oxidation processes in the micro-bridges. They are compared with such for structurally homogeneous films on silicon wafers.     

多变量加权多步预报控制*

对于线性多变量系统,本文给出了一种完全不同于以往的全状态反馈或观测器-控制器型的算法——多变量加权多步预报控制(MWLPC)算法。这种算法除引进了预测控制中的多步输出预报、滚动优化等机制外,最重要的是在二次型性能指标中引入了可调的多项式或有理分式矩阵权因子;适当选取这些权因子,便可按设计要求、仅用系统的输出信息反馈便能任意配置闭环系统的特征矩阵,从而保证闭环稳定性和其他优良性质。此外,该算法不改变原系统的零点,因而适用于非最小相位系统。     

预测控制算法的统一格式及其在电加热炉的应用

本文根据常用的两类预测控制算法推出一种新型预测控制算法。并将其应用于一双输入/双输出的力学持久机电加热炉的温度控制系统上,获得了满意的结果:控温精度为±1.5℃/300℃,且适用于非最小相位系统。     

The initial behaviour of freshly etched copper in moderately acid, aerated chloride solutions

When freshly etched samples of various types of copper were exposed in moderately acid, aerated chloride solutions, two phenomena were observed. First the corrosion potential and the pH of the solution decreased over a shorter time, then the potential increased over a long period (600-1500 min), following an s-shaped pattern. Increase in pH during the second stage was avoided using a pH-stat. The corrosion rate increased little or not at all over the entire period. A tentative interpretation of the short-term behaviour is presented with some reservation. The long-term development of the potential suggests phase formation or transformation following the Avrami pattern. By suitable derivations it was possible to fit the development of potentials to the Avrami equation. Subsequent examinations by Auger spectroscopy proved the presence of thin layers of Cu₂O on the copper surfaces, increasing in thickness with exposure time. The dissolution kinetics can be described in terms of two parallel electrochemical reactions and a simultaneous non-electrochemical dissolution reaction.