注入氮离子的SiC涂层阻氢性能研究

利用离子束混合－离子注入（Ar^ ）和磁控溅射相结合的实验技术在HR－1不锈钢基体上制备了注入N^ 的SiC涂层，并用表面分析手段对所制备涂层的表面形貌，剖面形貌、相结构，表面成分，表面元素的化学态进行了分析，结果表明：制备的涂层结构致密，表面平整、膜层成分均匀；涂层与基体之间形成了一明显的过渡层，增强了涂层和基体之间的结合力，用二次离子质谱（SIMS）对充氘涂层的阻氢性能进行了定性分析，结果表明，涂层元素与氢形成稳定的化学键，抑制了氢的扩散和迁移，使得涂层具有一定的阻氢能力。     

超强吸水树脂的吸水性能研究

对自制的超强吸水树脂的吸收性能进行了研究，分别考察了吸水树脂的粒径，溶液的pH值，几种离子如Na^ ,K^ ,Ca^2 ,Mg^2 等的水溶液对吸水树脂吸收性能的影响。实验结果表明，在pH为6－8，树脂粒径为100mesh-120mesh时，树脂的吸水性能最好，各种离子对吸水树脂吸收性能的影响大小顺序为：Na^ ＜K^ ＜Mg^2 ＜Ca^2 。     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

Synthetic resins: XV. Chelation ion exchange properties of 2,4- dinitrophenylhydrazone of resacetophenone-formaldehyde resin

A number of copolymers were synthesised by condensing the 2,4-dinitrophenylhydrazone of resacetophenone with substituted benzoic acids/ phenols and formaldehyde in the presence of sodium hydroxide or hydrochloric acid. The decomposition temperature, solubility and viscosity of the polymers have been determined. The ion-exchange properties have been studied by using a batch equilibrium method. The distribution of a number of metal ions between an aqueous solution and the resin have been measured. A wide range of pH and variable ionic strengths have been investigated.     

离子静电水处理技术在循环冷却水中的应用

简要介绍了离子静电水处理技术杀菌、灭藻、防垢阻垢的机理，及在循环冷却水系统中的应用情况。     

Retention of gallium ions from acidic solutions by pyridine strong‐base anion exchangers

Using the batch method, the retention of Ga(III) from HCl solutions by two gel‐type pyridine strong‐base anion exchangers containing 1‐methyl‐ or 1‐butyl‐4‐vinylpyridinium chloride structural units, called S₁ and S₂ resins, respectively, was studied. The influence of the HCl and Ga(III) concentrations as well as of the contact time between the resin and the liquid phase was investigated. The parameters, which characterize the retention process, were estimated using Langmuir and Freundlich isotherms. Both resins exhibited a higher affinity for gallium ions from a 6M HCl solution. According to Langmuir isotherms, maximum retention capacities of 44.44 and 60 mg Ga(III)/g dry resin for the S₁ and S₂ resins, respectively, were obtained. Freundlich isotherms provide additional proof for a higher affinity of the S₂ resin for Ga(III) from HCl solutions. It is clear that the substituent length increase on N⁺ atoms led to an increasing affinity of the pyridine strong base anion exchangers toward Ga(III). © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 3440–3444, 2002     

离子注入半导体的快速热退火与SOI技术

自1977年以来,为了摸索离子注入半导体的新退火方法,各国学者进行了大量的研究工作。这种努力是从激光退火的研究开始的。激光与半导体材料相互作用的研究,已派生出若干很有生命力的应用项目,其中,快速热退火、SOI(Semiconductor on Insulator)技术等已显示了重要的应用前景,并正在走向实用化。     

用于重离子核反应实验测量的纵向电场气体电离室

本文报道了一种新型的大动态范围，多叠层探测器系统组件之一的纵向电场气体电离室的构造，性能和在中能得离子核反应实验中的应用。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。